Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber |
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| Authors: | Sun Fu-He Wei Chang-Chun Sun Jian Zhang De-Kun Geng Xin-Hu Xiong Shao-Zhen and Zhao Ying |
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| Affiliation: | (Institute of Photo-Electronics, Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics, Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology (Nankai University), Ministry of Education, Tianjin 300071, China) |
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| Abstract: | This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment. |
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| Keywords: | boron contamination single
chamber microcrystalline silicon solar cells |
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