不同表面性质聚电解质多层膜的制备及蛋白质吸附和血液相容性能

利用层层自组装方法制备了聚烯丙基铵盐酸盐(PAH)/聚苯乙烯磺酸钠(PSS)多层膜. 通过吸附或共价偶联, 在多层膜表面修饰了聚乙二醇(PEG)、牛血清白蛋白(BSA)或肝素, 通过石英晶体微天平(QCM)、椭圆偏振光谱和原子力显微镜(AFM)研究了多层膜的表面形貌及修饰方法对各种蛋白的吸附性能. 经修饰后的多层膜较基底膜的厚度均有所增大; 最外层经修饰后的多层膜吸附的BSA、纤维蛋白原及血浆蛋白的量较未修饰多层膜均有所减少. 采用SEM观察了血小板在多层膜上的黏附情况和形态变化, 计算了血小板的黏附率. 比较各多层膜的凝血酶原时间(PT), 发现修饰后的多层膜的凝血酶原时间均有所延长, 但各组间无显著性差异.     

近红外光谱快速测定红花逆流提取过程中羟基红花黄色素A的含量

采用近红外光谱(NIRS)透射法对红花罐组式逆流提取过程中羟基红花黄色素A(Hydroxysafflor yellow A,HSYA)的含量进行快速无损的测定.在红花逆流提取过程中,以高效液相色谱法(HPLC)为对照分析方法,测定提取液中羟基红花黄色素A的含量,运用偏最小二乘(PLS)法建立NIR光谱与羟基红花黄色素A的HPLC分析值之间多元校正模型,并对逆流提取过程的未知样本进行含量预测.校正模型相关系数达到0.982,预测相关系数达到0.965,RMSEC和RMSEP分别为0.053和0.075,RSEC和RSEP分别为3.96%和5.25%.结果表明,NIRS可以作为一种准确、快速、无损的检测方法用于检测中药逆流提取过程有效成分含量变化规律.     

α-环糊精主客体识别超分子水凝胶的制备及其宏观流变性能构建过程研究

采用7 wt%的α-环糊精(α-CD)溶液和5 wt%的甲氧基聚乙二醇甲基丙烯酸酯均聚物(PMPEGA-2000)溶液制备了α-CD/PMPEGA-2000超分子水凝胶,并对其形貌、结构、形成条件和宏观流变学性能构建过程进行了表征和研究。结果表明,体积比不低于1.5:1是两种溶液混合后形成凝胶的必要条件;当体积比为2:1时,形成的凝胶黏度最大。热重分析、X射线粉末衍射分析和扫描电镜结果表明,该凝胶是基于α-CD与PMPEGA-2000之间的主客体识别所形成,具有三维网络结构。光学微流变分析结果显示,该凝胶宏观流变性能的构建过程实则是凝胶内部主客体识别交联点不断增多,网络结构强度不断增强的过程。该过程始于α-CD溶液与PMPEGA-2000溶液混合后的8′36′′,在64′00′′后基本完成,耗时约55′24′′。     

胍盐离子液体捕获CO2温室气体的机理

通过量子力学与分子动力学对胍盐离子液体的模拟表明,胍阳离子与氯负离子之间存在较强的相互作用,其相互作用能约为-109．216kcal／m01．从能量与几何分布可见,两种空间分布方式中最稳定构象为Middle作用模式．径向分布函数也验证了这一结论．C02含量的不断增加并没有对离子液体的结构产生影响,而是被离子液体的空腔捕获．     

双层加筋板低频声的隔离与有源控制

为探讨加筋对双层结构低频隔声及有源控制的影响,分析了筋条数目及布放位置对双层加筋结构低频隔声性能、有源控制策略选取及有源隔声性能的影响。首先利用模态叠加与声-振耦合理论对双层加筋结构建模,然后采用数值算例对上述问题展开探讨。研究发现,筋条数目增多或筋条靠近基板的中间位置布放,将有利于双层加筋结构低频隔声性能的提高。对于有源控制措施,声控制策略与力控制策略相比,前者的控制效率较高且降噪效果较好。由于筋复杂的耦合影响,添加多条筋或筋条靠基板中间布置时有源控制效果减弱,需施加多个点源才能获得较好的降噪效果。      

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

塑料表面载银微凝胶层层组装膜的制备及抗菌活性

以载银聚烯丙基胺盐酸盐-葡聚糖微凝胶与聚苯乙烯磺酸钠为构筑基元,利用层层组装技术制备了一种可直接沉积在疏水的塑料基底表面的载银抗菌微凝胶膜. 研究结果表明,该载银抗菌微凝胶膜具有很好的抗菌能力,并且其抗菌活性可以通过控制载银微凝胶膜的组装层数方便地进行调控. 这种制备在塑料表面的载银抗菌微凝胶膜具有良好的稳定性和基底粘附力,能够保障其长效抗菌的实现.