排序方式: 共有23条查询结果,搜索用时 62 毫秒
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研究了AlGaN/GaN 高电子迁移率晶体管(HEMT)的质子辐照效应. 在3 MeV质子辐照下, 当辐照剂量达到1× 1015 protons/cm2时, 漏极饱和电流下降了20%, 最大跨导降低了5%. 随着剂量增加, 阈值电压向正向漂移, 栅泄露电流增加. 在相同辐照剂量下, 1.8 MeV质子辐照要比3 MeV质子辐照退化严重. 从SRIM软件仿真中得到不同能量质子在AlGaN/GaN异质结中的辐射损伤区, 以及在一定深度形成的空位密度. 结合变频C-V测试结果进行分析, 表明了质子辐照引入空位缺陷可能是AlGaN/GaN HEMT器件电学特性退化的主要原因. 相似文献
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为探索锗硅异质结双极晶体管(SiGe HBT)总剂量效应的损伤机理,采用半导体器件三维模拟工具(TCAD),建立电离辐照总剂量效应损伤模型,分析比较电离辐射在SiGe HBT不同氧化层结构的不同位置引入陷阱电荷缺陷后,器件正向Gummel特性和反向Gummel特性的退化特征,获得SiGe HBT总剂量效应损伤规律,并与60Coγ辐照实验进行对比.结果表明:总剂量辐照在SiGe HBT器件中引入的氧化物陷阱正电荷主要在pn结附近的Si/SiO2界面处产生影响,引起pn结耗尽区的变化,带来载流子复合增加,最终导致基极电流增大、增益下降;其中EB Spacer氧化层中产生的陷阱电荷主要影响正向Gummel特性,而LOCOS隔离氧化层中的陷阱电荷则是造成反向Gummel特性退化的主要因素.通过数值模拟分析获得的SiGe HBT总剂量效应损伤规律与不同偏置下60Coγ辐照实验的结论符合得较好. 相似文献
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聚乙烯醇硫酸钾水凝胶电机械化学行为研究 总被引:1,自引:0,他引:1
通过将交联聚乙烯醇硫酸酯化的方法制备了一种新型电刺激响应性聚乙烯醇硫酸钾(PVSK)智能水凝胶,并探讨了溶液离子强度和pH对PVSK水凝胶的溶胀吸水率、机械性能以及电机械化学行为的影响.结果表明,制备的PVSK水凝胶的平衡溶胀比随NaCl溶液离子强度的增大而减小,在pH2.39~10.83范围内基本不受溶液pH的影响;经不同离子强度和pH的NaCl溶液充分溶胀的PVSK水凝胶具有良好的机械性能,在非接触的直流电场作用下,该水凝胶向电场负极弯曲,凝胶的弯曲速度和弯曲偏转量随外加电场强度的增加而增大,随NaCl溶液离子强度的增大出现临界最大值,但不随溶液pH(2.08~10.53)的改变而改变;在循环电场作用下,PVSK水凝胶的电机械化学行为具有良好的可逆性. 相似文献
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor 下载免费PDF全文
The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. 相似文献
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Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization 下载免费PDF全文
We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL. 相似文献
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建立了非微扰外推模式下的几种G3(QCI)方法:G3(QCI/fu1)、G3(QCI/fu2)、G3(QCI/ful)//B3PW91和G3(QCI/fu2)//B3PW91.其中,电子能量用QCISD(T,FC)/G3large直接计算,芯电子相关能分别在MP2/6-31G(d)和MP2/6-31G(d,p)级别上计算,对125个G2-1 test set 的计算结果表明,总体精度与G3和G3 //B3LYP相当;平均绝对偏差分别为4.370、4.389、4.061和4.022kJ mol-1,相应G3和G3//B3LYP分别为4.27和4.05kJ mol-1.文章提出的方法排除了G3中外推办法的不确定因素,且更适用于非平衡几何构型体系能量的定量计算。 相似文献
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