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Parasitic bipolar amplification in a single event transient and its temperature dependence 下载免费PDF全文
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor. 相似文献
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The dispersion relations of the surface polariton in a semi-infinite wire medium with spatial dispersion are analysed. In comparison with the traditional spatial dispersive medium there only exists one branch instead of multibranch for the dispersion curve. The possibility of the experimentally observing the surface polaritons by attenuated total reflection is simulated numerically. 相似文献
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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology 下载免费PDF全文
Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS. 相似文献
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为明确水中脉冲放电能量释放过程所产生气泡的脉动和压力波冲击特性,依据能量等效原则,在LS-DYNA软件中建立针-板电极结构的水下爆轰模型,模拟气泡形态。通过与获取的物理图像比对,发现气泡形态和时间演化尺度高度一致。在此基础上,对气泡的冲击特性进一步分析,结果表明:冲击波峰值、气泡脉动周期和半径大小随放电能量增加而加大,随静水压力的增加而减小;当放电电压由14 kV增至20 kV,二次压力波峰值由2.89 MPa升至4.09 MPa,提高41.5%;当静水压力由202.65 kPa增至506.63 kPa,二次压力波峰值从5.15 MPa升至6.36 MPa,提高23.5%,放电能量和水压的增加对二次压力波提升明显;随着距离增加,二次压力波所占冲击波的峰值压力比重,由12.6%增加至35.3%,远场放电位置二次压力波不可忽视。 相似文献
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We investigate the dynamic characteristics of metamaterial systems, such as the temporal coherence gain of the superlens, the causality limitation on the ideal cloaking systems, the relaxation process and essential elements in the dispersive cloaking systems, and the extending of the working frequency range of cloaking systems. The key point of our study is the physical dispersive properties of metamaterials, which are well-known to be intrinsically strongly dispersive. With physical dispersion, new physical pictures can be obtained for the waves propagating inside metamaterial, such as the “group retarded time” for waves inside the superlens and cloak, the causality limitation on real metamaterial systems, and the essential elements for design optimization. Therefore, we believe the dynamic study of metamaterials will be an important direction for further research. All theoretical derivations and conclusions are demonstrated by powerful finite-difference time-domain simulations. 相似文献
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采用三维数值模拟的方法对比研究了单个NMOS晶体管和反相器链中的单粒子瞬变(single event transient,SET)电流脉冲,发现深亚微米工艺下双极放大电流在单管的SET电流脉冲中占主要成分,而在反相器链的SET模拟中不明显,分析二者的区别解释了源/体结偏压的形成过程和放大机理,并证明了双极放大效应受源/体结偏压影响的结论.在此基础上分析了NMOS管中源极的正向电流及其机理,发现台阶区的源极正向电流主要是由扩散作用形成的.
关键词:
单粒子瞬变
双极放大
混合模拟
台阶区电流 相似文献
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Bound and Resonant States of the Hulthén Potential Investigated by Using the Complex Scaling Method with the Oscillator Basis 下载免费PDF全文
Bound and resonant states of the Hulthén potential are studied. The complex scaling method is used to achieve the energy spectrum. The oscillator basis is used to expand the radial wave function. Conforming to the standard feature of the complex scaling method, the bound energies do not change and the continuums change with the rotational angle. With tables and graphs, the interesting properties of the energy spectrum for various physical parameters are presented. The Gauss quadrature integral approximation is used to deal with the potential integral term. 相似文献
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