分子束外延生长的极性与非极性BeZnO薄膜的比较研究

采用分子束外延设备在不同晶面蓝宝石衬底上(c面,a面,r面)生长BeZnO薄膜。使用复合缓冲层生长得到了高质量的BeZnO薄膜,X射线衍射半高宽达到600 arcsec。在c面与a面蓝宝石衬底上生长得到了极性BeZnO薄膜,在r面蓝宝石上生长得到了非极性BeZnO薄膜。共振拉曼光谱测试结果表明薄膜中的Be含量在同一水平。相对于c面与a面蓝宝石上的极性BeZnO薄膜,生长在r面蓝宝石衬底上的非极性BeZnO薄膜具有较大的表面粗糙度以及较大的半高宽,但是其光致发光谱中的紫外发光峰远远强于极性BeZnO薄膜,并且黄绿光发光峰弱于极性BeZnO薄膜。     

衬底温度对非极性ZnO薄膜结晶性能和发光特性的影响

采用金属有机化学汽相沉积(MOCVD)设备在LiGaO2(100)衬底上制备了结晶性能良好的非极性ZnO薄膜.研究了衬底温度对ZnO薄膜结晶性能的影响.X射线衍射(XRD)分析结果表明在衬底温度为500℃时可以获得高质量的(1100)晶面取向的非极性ZnO薄膜.采用原子力显微镜(AFM)观察ZnO薄膜的表面形貌及晶体尺...     

衬底温度对PLD法生长的Mg0.05Zn0.95O薄膜结构和发光特性的影响

用脉冲激光沉积(PLD)法在不同温度的Si(111衬底上成功制备了c轴择优取向的Mg0.05Zn0.95O薄膜.通过X射线衍射(XRD)和光致发光谱(PL)研究了衬底温度对Mg0.05Zn0.95O薄膜结构和发光特性的影响,探讨了膜的结晶质量与发光特性之间的关系.结果表明,在衬底温度为450℃时生长的Mg0.05Zn0.95O薄膜具有很好的轴取向和较强的光致发光峰.室温下分别用激发波长为240,300和325nm的氙灯作为激发光源得到不同样品的PL谱,分析表明紫外发光峰和紫峰来源于自由激子的复合辐射且发光强度与薄膜的结晶质量密切相关,蓝绿发光峰与氧空位有关.此外,探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理.     

金属有机物化学气相沉积生长的a(11-20)面GaN三角坑缺陷的消除研究

用金属有机物化学气相沉积方法在r面蓝宝石上生长了非极性a面GaN薄膜,通过采用AlGaN多量子阱插入层,得到了高质量的非极性GaN材料.用原子力显微镜和高分辨X射线衍射仪研究了a面GaN的表面形貌和结晶质量,发现非极性材料上典型的三角坑缺陷被消除,(11-20)面X射线双晶摇摆曲线的半峰宽为680″.     

N极性GaN薄膜的MOCVD外延生长

采用MOCVD技术在c面蓝宝石衬底上外延制备了N极性GaN薄膜。通过KOH腐蚀的方法判定了GaN外延薄膜的极性。通过X射线双晶衍射(XRD)摇摆曲线和光致荧光(PL)谱测试研究了成核层生长时间对N极性GaN薄膜晶体质量和发光性能的影响。研究结果表明,成核层生长时间为300 s时,N极性GaN薄膜样品的位错密度最低,发光性能最好。采用拉曼(Raman)光谱对样品的应变状态进行了分析。     

金属有机物化学气相沉积生长的$lt;i$gt;a$lt;/i$gt;(1120)面GaN三角坑缺陷的消除研究

用金属有机物化学气相沉积方法在r面蓝宝石上生长了非极性a面GaN薄膜,通过采用AlGaN多量子阱插入层,得到了高质量的非极性GaN材料. 用原子力显微镜和高分辨X射线衍射仪研究了a面GaN的表面形貌和结晶质量,发现非极性材料上典型的三角坑缺陷被消除,（1120）面X射线双晶摇摆曲线的半峰宽为680″. 关键词： GaN 原子力显微镜 高分辨X射线衍射仪 非极性     

在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜

利用Mg O和低温Zn O的缓冲层技术,在c面蓝宝石衬底上用等离子体辅助分子束外延(P-MBE)的方法生长了高质量的Zn O单晶薄膜。通过XRD测试,Zn O薄膜样品具有c轴方向的择优取向,其(002)方向摇摆曲线的半高宽(FWHM)仅为68.4 arcsec,(102)方向摇摆曲线的半高宽(FWHM)为1 150 arcsec,显示了外延薄膜极高的晶体质量。另外从扫描电子显微测试结果和原子力显微测试结果来看,Zn O薄膜具有极为平整的表面,3μm×3μm面积内的均方根粗糙度仅为0.842 nm,接近原子级的平整。拉曼光谱(Raman)和荧光光谱(PL)测试结果显示,Zn O薄膜样品内部的应力基本释放,而且具有极低的点缺陷密度。高质量Zn O单晶薄膜的实现为Zn O基的光电器件的制备提供了坚实的基础。     

掺锰氧化锌的结构和光学特性

采用直流反应磁控溅射的方法,在玻璃衬底上沉积了Zn0.93Mn0.07O薄膜,研究了氧分压对薄膜结构和光学特性的影响。X射线衍射测试结果显示,Zn0.93Mn0.07O薄膜都具有高度的c轴择优取向,在氧分压为0.4的时候,薄膜的衍射峰具有最小的半峰全宽,最大的晶粒尺寸。X射线光电子能谱测试结果表明:Mn2 离子已经取代了氧化锌晶格中的部分Zn2 ,但还掺杂有少量的MnO2分子;处在1 021 eV的Zn 2p3/2能级只有单一的Zn2 ;而O2 -则来自Zn-O和Mn-O。由于伯斯坦-莫斯效应,Zn0.93Mn0.07O薄膜光吸收跃迁过程只能在价带态和费密能级附近及以上的导带空态之间发生,其吸收谱线显示,与纯ZnO薄膜吸收谱线相比,产生了蓝移现象。同时还伴随有导带尾跃迁的发生,研究表明,这是由3d5多重能级的d-d跃迁而引起的。经过计算,在氧分压为0.4的时,Zn0.93Mn0.07O薄膜的禁带宽度是最大的,这可能是由交换作用的减弱而引起的。     

激光能量对反钙钛矿GaCMn_3薄膜结构与物性的影响

本文采用脉冲激光沉积方法在LaAlO3(001)单晶衬底上制备了反钙钛矿GaCMn3薄膜,通过控制制备过程中脉冲激光的能量,研究了不同激光能量条件对GaCMn3薄膜结构与物理性能的影响.分别利用X射线衍射仪、原子力显微镜、超导量子干涉仪和物理性能测试系统,对所制备的薄膜的晶体结构、表面形貌和磁性、电输运性质进行了研究.结果表明,制备的样品均为具有多个晶面取向的反钙钛矿薄膜,且薄膜结构和物性明显随制备激光能量的变化而变化.当激光能量为450mJ时,制备的薄膜多晶面取向性最弱,结晶性和表面形貌最优良.实验所得的薄膜均表现出顺磁-铁磁-反铁磁相转变,然而转变过程比块材较平缓,同时薄膜的电阻率并未表现出块材中的突变特征,我们推测该现象很可能是由衬底的应力及衬底的晶格膨胀对薄膜反常晶格变化的抑制作用造成的.     

蒸发条件对碘化铅多晶薄膜结构的影响

采用真空蒸发法在普通玻璃上制备了PbI₂多晶薄膜.研究了蒸发速率、蒸发源与衬底距离、薄膜厚度以及衬底温度等实验条件对所制备PbI₂多晶薄膜结构的影响.利用X射线衍射仪和扫描电子显微镜对样品进行了测试.结果表明，在衬底温度为室温时得到(001)择优取向的多晶PbI₂薄膜，即沿c轴垂直衬底方向取向生长的薄膜.当衬底温度升高时，薄膜的择优取向逐渐由(001)转向(003)，且晶体颗粒变大.薄膜中的内应力随衬底温度的升高而降低.     

Defects in room-temperature ferromagnetic Cu-doped ZnO films probed by x-ray absorption spectroscopy

We report a comprehensive study of the defects in room-temperature ferromagnetic (RTFM) Cu-doped ZnO thin films using x-ray absorption spectroscopy. The films are doped with 2 at.% Cu, and are prepared by reactive magnetron sputtering (RMS) and pulsed laser deposition (PLD), respectively. The results reveal unambiguously that atomic point defects exist in these RTFM thin films. The valence states of the Cu ions in both films are 2(+). In the film prepared by PLD, the oxygen vacancies (V(O)) form around both Zn ions and Cu ions in the hexagonal wurtzite structure. Upon annealing of the film in O(2), the V(O) population reduces and so does the RTFM. In the film prepared by RMS, the V(O)s around Cu ions are not detected, and the V(O) population around Zn ions is also smaller than in the PLD-prepared film. However, zinc vacancies (V(Zn)) are evidenced. Given the low doping level of spin-carrying Cu ions, these results provide strong support for defect-mediated ferromagnetism in Cu-doped ZnO thin films.     

Magnetic and spectroscopic characteristics of ZnMnO system

We report on the observation of room-temperature ferromagnetism in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets. The X-ray, microscopic, spectroscopic and magnetic properties of target material containing 6 at.% of Mn and films were compared. The target shows the presence of large clusters exhibiting paramagnetic behavior. However, ferromagnetic properties were observed in (Zn,Mn)O films grown at a substrate temperature of 500 °C and with an oxygen partial pressure of 1 mTorr. Although, crystalline quality of the film improves with increasing substrate temperature, the ferromagnetism becomes weaker.     

Room-temperature ferromagnetism in amorphous In–Ga–Zn–O films fabricated by using pulsed-laser deposition

Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In–Ga–Zn–O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.     

Na-Mg共掺杂ZnO薄膜的结构和光学性质

利用溶胶-凝胶法,在普通载玻片上使用旋转涂膜技术制备了具有c轴择优取向生长的Na-Mg共掺杂的ZnO薄膜。用XRD、SEM、光致发光(PL)及透射光谱对薄膜样品进行了表征。结果表明:Na-Mg共掺杂有利于ZnO薄膜的c轴择优取向生长,并且随着Na+掺杂浓度的增加,晶粒尺寸先增大后减小;通过比较不同掺杂浓度ZnO薄膜的PL谱,推测发光峰值位于380nm的紫外发射与ZnO的自由激子复合有关;发现掺入Mg的确能使ZnO禁带宽度增大,掺杂组分为Na0.04Mg0.2Zn0.76O时,其PL谱只有一个很强的紫光发射峰,其近带边紫外光发射强度较未掺杂的ZnO增强了近10倍,极大地提高了薄膜紫外发光性能;并且随Na+浓度增加薄膜透光性减弱。     

Optical constants of Na-doped ZnO thin films by sol-gel method

The structural and optical properties of pure and Na-doped ZnO thin films have been investigated by X-ray diffraction (XRD), atom force microscopy and UV-Vis spectrophotometer. The crystal structure of all the thin films is the hexagonal wurtzite. The average grain size and surface roughness increases with the increase of the Na/Zn ratio. The optical band gap of the thin films decreases from 3.26 to 3.12 eV by increasing the Na/Zn ratio from 0.0 to 0.10. Transmittance spectra were used to determine the optical constants of the thin films, and the effect of Na/Zn ratio on the optical constants was investigated. With the increase of Na/Zn ratio, the refractive index decreases and the extinction coefficient increases in the 380-700 nm spectral range.     

不同Ar/O2气压比例条件下立方MgZnO薄膜生长特性及紫外光吸收特性

利用脉冲激光沉积技术在非晶石英衬底上制备了立方结构MgZnO薄膜,研究了在不同Ar/O₂气压比例条件下,立方结构MgZnO薄膜的生长取向、光学带隙和Mg/Zn含量比例的变化规律。当固定氧气分压为2 Pa、通过注入惰性的Ar气使生长气压从2 Pa升高到7 Pa时,MgZnO薄膜的生长取向由（200）向（111）转变。当生长气压从2 Pa升高到6 Pa时,MgZnO薄膜光学带隙变窄。而当生长气压从6 Pa升高到7 Pa时,MgZnO薄膜光学带隙反而变宽。通过XPS数据分析,不同生长气压下MgZnO薄膜光学带隙的变化规律与薄膜Mg/Zn含量比例的变化规律不一致,MgZnO薄膜中Mg和Zn与O的结合情况的变化对薄膜的光学带隙也有影响。     

Nanostructure and optical properties of M doped ZnO (M=Ni, Mn) thin films prepared by sol-gel process

The transparent thin films of undoped, Mn-doped, and Ni-doped zinc oxide (ZnO) have been deposited on glass substrates via sol-gel technique using zinc acetate dehydrate, nickel chloride, and manganese chloride as precursors. The structural properties and morphologies of the deposited undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/vis spectroscopy. The analyzed results indicate that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn or Ni related phases. The band gap energy was estimated by Tauc's method and found to be 3.28, 3.26, and 3.34 eV for ZnO, Ni-doped ZnO, and Mn-doped ZnO thin films at room temperature, respectively. Room temperature photoluminescence is observed for the ZnO, Ni-doped ZnO, and Mn-doped ZnO thin films.     

On the Possible Magnetic Properties of Ultrathin Mn2GaC Films on Al2O3 Substrates

JETP Letters - The possibility of growth of thin Mn2GaC MAX phase films on Al2O3 substrates with various orientations and their magnetic properties have been studied. The most favorable orientation...     

脉冲激光沉积方法制备ZnO薄膜生长参量对发光特性的影响

用脉冲激光沉积（PLD）方法在Si（111）衬底上制备了ZnO薄膜。以325nmHe-Cd激光器为光源对薄膜进行了荧光光谱分析,用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的结构和形貌进行了分析。脉冲激光沉积方法的主要生长参量为氧压、激光重复频率、生长温度和激光能量。通过控制这些参量变量,研究了这些参量对ZnO薄膜发光特性的影响,得到了用于紫外发光的ZnO薄膜生长的优化条件：发现在温度为650℃左右、氧压50Pa左右、频率5Hz左右的范围内能得到半峰全宽较窄,强度较大的紫外发光峰。分析认为紫外峰主要是由激子辐射复合发光形成的,绿光带主要和Ozn的存在密切相关,氧空位是蓝光发射的重要原因。     

Enhanced photo-induced hydrophilicity of the sol-gel-derived ZnO thin films by Na-doping

Na-doped ZnO thin films with different Na/Zn ratio were prepared by sol-gel method. The microstructure, chemical composition, surface morphology, and wettability of the thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, and water contact angle apparatus. The relation of wettability and Na/Zn ratio has been studied in detail. The wetting behavior of the thin films can be reversibly switched from hydrophobic to hydrophilic, through alternation of UV illumination and dark storage (or thermal treatment). Photo-induced hydrophilicity of the thin films increases with increasing Na/Zn ratio up to 0.08 and then decreases. The mechanism can be attributed to surface nanostructure and the concentration of Na doping.