激光能量对反钙钛矿GaCMn_3薄膜结构与物性的影响

本文采用脉冲激光沉积方法在LaAlO3(001)单晶衬底上制备了反钙钛矿GaCMn3薄膜,通过控制制备过程中脉冲激光的能量,研究了不同激光能量条件对GaCMn3薄膜结构与物理性能的影响.分别利用X射线衍射仪、原子力显微镜、超导量子干涉仪和物理性能测试系统,对所制备的薄膜的晶体结构、表面形貌和磁性、电输运性质进行了研究.结果表明,制备的样品均为具有多个晶面取向的反钙钛矿薄膜,且薄膜结构和物性明显随制备激光能量的变化而变化.当激光能量为450mJ时,制备的薄膜多晶面取向性最弱,结晶性和表面形貌最优良.实验所得的薄膜均表现出顺磁-铁磁-反铁磁相转变,然而转变过程比块材较平缓,同时薄膜的电阻率并未表现出块材中的突变特征,我们推测该现象很可能是由衬底的应力及衬底的晶格膨胀对薄膜反常晶格变化的抑制作用造成的.     

热膨胀系数和磁性可调的Mn_(0.983)CoGe/环氧树脂复合材料北大核心CSCD

为解决环氧树脂(Epoxy)热膨胀系数较大、热导率较低的问题,我们通过固相反应法制备了巨负膨胀材料Mn_(0.983)CoGe,并将不同体积分数的Mn_(0.983)CoGe粉末(平均颗粒直径~10μm)均匀分散至Epoxy中,制备成Mn_(0.983)CoGe/Epoxy复合材料.研究结果表明仅需加入体积分数为22.5vol.%的Mn_(0.983)CoGe,复合材料即在267 K^320K的温度区间内呈现近零的热膨胀系数.并且,Mn_(0.983)CoGe/Epoxy复合材料的热导率也随着Mn_(0.983)CoGe填充量的增加而显著提升.例如当复合材料中Mn_(0.983)CoGe填充量为30vol.%时,其150K处的热导率提升近3倍.此外,我们还发现,在与Epoxy复合之后,由于受到Epoxy基体产生的应力的影响,Mn_(0.983)CoGe磁结构相变温区展宽,同时六角相到正交相的转化率也显著降低.     

Anomalous low-temperature heat capacity in antiperovskite compounds

The low-temperature heat capacities are studied for antiperovskite compounds AX M_3(A = Al, Ga, Cu, Ag, Sn, X = C,N, M = Mn, Fe, Co). A large peak in(C- γ T)/T~3 versus T is observed for each of a total of 18 compounds investigated,indicating an existence of low-energy phonon mode unexpected by Debye T~3 law. Such a peak is insensitive to the external magnetic field up to 80 k Oe(1 Oe = 79.5775 A·m-1). For compounds with smaller lattice constant, the peak shifts towards higher temperatures with a reduction of peak height. This abnormal peak in(C- γ T)/T~3 versus T of antiperovskite compound may result from the strongly dispersive acoustic branch due to the heavier A atoms and the optical-like mode from the dynamic rotation of X M_6 octahedron. Such a low-energy phonon mode may not contribute negatively to the normal thermal expansion in AX M_3 compounds, while it is usually concomitant with negative thermal expansion in open-structure material(e.g., ZrW_2O_8, Sc F_3).