Contamination process and laser-induced damage of HfO2/SiO2 coatings in vacuum

The performances of HfO2/SiO2 single- and multi-layer coatings in vacuum influenced by contamination are studied. The surface morphology, the transmittance spectrum, and the laser-induced damage threshold are investigated. The results show that the contamination in vacuum mainly comes from the vacuum system and the contamination process is different for the HfO2 and SiO2 films. The laser-induced damage experiments at 1064 nm in vacuum show that the damage resistance of the coatings will decrease largely due to the organic contamination.     

用1064nm激光增强HfO2/SiO2薄膜的抗激光损伤能力的实验研究

 用1 064nm激光实验研究了HfO₂/SiO₂薄膜的激光损伤增强效应，实验以薄膜激光损伤阈值70%的激光能量开始，采用N-ON-1方式处理薄膜，激光脉冲的能量增量为5J/cm²。实验结果表明，激光处理薄膜表面能使激光损伤阈值平均提高到3倍左右，并且薄膜的损伤尺度也明显减小。对有缺陷的薄膜，其缺陷经低能量激光后熔和消除，其抗激光损伤能力得到增强，但增强得并不显著，而薄膜本身的激光预处理，可以使其激光损伤阈值大大提高。     

Accumulation effect of SiO_2 protective layer on multi-shot laser-induced damage in high-reflectivity HfO_2/SiO_2 coatings

The accumulation effects in high-reflectivity(HR) HfO2/SiO2 coatings under laser irradiation are investigated.The HR HfO2/SiO2 coatings are prepared by electron beam evaporation at 1 064 nm.The laser-induced damage threshold(LIDT) are measured at 1 064 nm and at a pulse duration of 12 ns,in 1-on-1 and S-on-1 modes.Multi-shot LIDT is lower than single-shot LIDT.The laser-induced and native defects play an important role in the multi-shot mode.A correlative theory model based on critical conduction band electron density is constructed to elucidate the experimental phenomena.     

Effect of λ/2 SiO_2 overcoat on the laser damage of HfO_2/SiO_2 high-reflector coatings

The effect of λ/2 SiO2 overcoat on the laser damage characteristics of HfO2/SiO2 high-reflector (HR) coatings is investigated with 1-on-l and N-on-1 laser damage test methods. The laser damage surface of 1-on-l is analyzed by a step analyzer. The surface morphologies show that laser damage makes the coating damaged area protrudent and rough for HR coating without λ/2 silica overcoat, but concave and smooth for HR coating with A/2 silica overcoat. The result of 10-on-l multi-pulse irradiation on the same point of the coating shows that there is an energy density stage on the damage curve. If the laser energy density is within the range of the stage, HfO2/SiO2 HR coatings with λ/2 silica overcoat will not be damaged more than 2 times for multi-shots, and the surface damages are very slight so that there is no impact on the coating performance. Another interesting result is that the energy density stage extends from the damage threshold to the point of about 3 times of threshold, which is similar to the     

Study on high-reflective coatings of different designs at 532 nm

Conventional HfO2/SiO2 and Al2O3/HfO2/SiO2 double stack high reflective （HR） coatings at 532 nm are deposited by electron beam evaporation onto BK7 substrates. The laser-induced damage threshold （LIDT） of two kinds of HR coatings is tested, showing that the laser damage resistance of the double stack HR coatings （16 J/cm2） is better than that of the conventional HR coatings （12.8 J/cm2）. Besides, the optical properties, surface conditions, and damage morphologies of each group samples are characterized. The results show that laser damage resistance of conventional HR coatings is determined by absorptive defect, while nodular defect is responsible for the LIDT of double stack HR coatings.     

Influence of APS bias voltage on properties of HfO_2 and SiO_2 single layer deposited by plasma ion-assisted deposition

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.     

Study on Laser Conditioning of Optical Coatings

ＳｔｕｄｙｏｎＬａｓｅｒＣｏｎｄｉｔｉｏｎｉｎｇｏｆＯｐｔｉｃａｌＣｏａｔｉｎｇｓ￥ＺＨＡＯＱｉａｎｇ；ＦＡＮＺｈｅｎｇｘｉｕ；ＷＡＮＧＺｈｉｊｉａｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓａｎｄＦｉｎｅＭｅｃｈａｎｉｃｓ，Ｃｈｉｎｅｓ...     

SiO2半波覆盖层对HfO2/SiO2高反膜激光损伤的影响

 研究了SiO₂半波覆盖层对HfO₂/SiO₂高反射膜1064nm激光损伤的影响,分析薄膜的激光损伤特性及图貌得出, 对于单脉冲（1-ON-1）激光损伤,SiO₂半波覆盖层能提高HfO₂/SiO₂高反膜的激光损伤阈值;可显著降低激光损伤程度,减小灾难性损伤发生的概率;可大幅度提高HfO₂/SiO₂高反膜膜的抗激光损伤能力。     

HfO2中ZrO2含量对266nm HfO2/SiO2多层膜反射率的影响

用两种不同纯度的HfO2材料与同一纯度的SiO2材料组合,沉积Λ／4规整膜系(HL)^11H形成266nm的紫外反射镜,发现反射率相差0．7％左右。用X光电子能谱法分析了高反膜中表层HfO2中的成分,发现ZrO2的含量相差一个数量级左右。为确定形成这种差别的原因,用辉光放电质谱法测定了这两种HfO2材料中锆(Zr)及其钛(Ti)、铁(Fe)的含量,发现Zr是其中的最主要的杂质,两种HfO2材料中Zr含量有一个数量级的差别。说明在266nm波段,HfO2中ZrO2的含量会对HfO2／SiO2高反膜的反射率造成影响。根据HfO2单层膜的光谱曲线,推算出了这两种材料的消光系数的差别,并用Tfcalc膜系设计软件进行理论和镀制结果的模拟,得到与实验测试一致的结果。     

COIL用变形反射镜介质反射膜

 报道COIL激光用变形反射镜的介质反射多层膜实验。在真空镀膜机内制备了膜系Sub/Ag(SiO₂/HfO₂)⁴/air和Sub/Ag(YbF₃/ZnS)³/air, 反射率分别为99.90%和99.87%。在经历109次循环后变形镜物理特性无变化。研究了COIL激光辐射下热畸变和损伤特性。分别在功率密度为1.52kW/cm²和1.18kW/cm²的COIL激光辐照下,这两种膜系的变形镜波前变化为0.37l 和0.54l 。因此对于变形镜1kW/cm²激光功率密度是安全可靠的。     

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.     

SiO2半波覆盖层对HfO2／SiO2高反射膜激光损伤的影响

研究了SiO2半波覆盖层对HfO2／SiO2高反射膜1064nm激光损伤的影响,分析薄膜的激光损伤特性及图貌得出-对于单脉冲(1-ON-1)激光损伤,SiO2半波覆盖层能提高HfO2／SiO2高反射膜的激光损伤厨值,可显著降低激光损伤程度,减小灾难性损伤发生的概率,可大幅度提高FIfO2／SiO2高反射膜的抗激光损伤能力。     

Research on the UV Dielectric Coatings with High Damage Threshold

ＲｅｓｅａｒｃｈｏｎｔｈｅＵＶＤｉｅｌｅｃｔｒｉｃＣｏａｔｉｎｇｓｗｉｔｈＨｉｇｈＤａｍａｇｅＴｈｒｅｓｈｏｌｄＧＡＯＨｕａｉｌｉｎＳＨＡＮＹｕｓｈｅｎｇＷＡＮＧＮａｉｙａｎ（ＣｈｉｎａＩｎｓｔｉｔｕｔｅｏｆＡｔｏｍｉｃＥｎｅｒｇｙ，Ｐ．Ｏ．Ｂｏｘ...     

HfO_2/SiO_2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器 ,对高损伤阈值薄膜常采用的 Hf O2 /Si O2 薄膜进行了表面显微图象研究 ,分析了薄膜常见的表面缺陷 ,如节瘤 ,孔洞和划痕等。薄膜表面缺陷的激光损伤实验表明 ,不同缺陷的抗激光损伤能力大不相同 ,节瘤缺陷最低 ,约为 1 5 J/ cm2 ,薄膜的损伤阈值主要由其决定 ,孔洞的激光损伤能力与节瘤相比较高 ,约为节瘤的 2～ 3倍。节瘤缺陷在低能量密度的激光损伤所形成的孔洞 ,与镀制过程中形成的孔洞形貌相似 ,激光再损伤能力也相似。低能量密度的激光把节瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一     

HfO2／SiO2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用HfO2/SiO2薄膜进行了表面显微图象研究,分析了薄膜常见的表面缺陷,如节瘤,孔洞和划痕等。薄膜表面缺陷的激光损伤实验表明,不同缺陷的抗激光损伤能力不大相同。节瘤缺陷最低,约为15J/cm^2,薄膜的损伤阈值主要由其决定,孔洞的激光损伤能力与节瘤相比较高,约为节瘤的2－3倍。节瘤缺陷在低能量密度的激光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。     

Analysis of laser induced thermal mechanical relationship of HfO_2/SiO_2 high reflective optical thin film at 1064 nm

A numerical model is developed for the calculation of transient temperature field of thin film coating induced by a long-pulsed high power laser beam. The electric field intensity distribution of HfO2/Si02 high reflective （HR） film is investigated to calculate the thermal field of the film. The thermal-mechanical relationships are discussed to predict the laser damage area of optical thin film under long pulse high energy laser irradiation.     

Influence of purity of HfO2 on reflectance of ultraviolet multilayer

The impurities in two kinds of HfO2 materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum technology and secondary ion mass spectrometry(SIMS) equipment respectively.It was found that ZrO2 was the main impurity in the two kinds of HfO2 either in the original HfO2 materials or in the electron beam deposited films.In addition,the difference of Zr content in the two kinds of HfO2 single laver films was much laxger than that of the other impurities such as Ti and Fe.which showed that it was just ZrO2 that made the difference between the optical performance of the film products including the two kinds of HfO2.With these two kinds of HfO2 and the same kind of SiO2.we deposited HfO2/SiO2 multilayer reflective coatings at the wavelength of 266 nm.Experimental results showed that the reflectances of these two mirrors were about 99.85% and 99.15% respectively,which agreed well with the designed results what were based on the optical constants obtained from the corresponding single layer thin films.     

Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu（In,Ga）Se2 solar cell application

Samples with nodular defects grown from gold nanoparticles are prepared,and laser-induced damage tests are conducted on them.Nodular defects,which are in critical state of damage,are cross-sectioned by focusing on the ion beam and by imaging using a field emission scanning electron microscope.The crosssectional profile shows that cracks are generated and propagated along the nodular boundaries and the HfO2/SiO2 interface,or are even melted.The thermomechanical process induced by the heated seed region is analyzed based on the calculations of temperature increase and thermal stress.The numerical results give the critical temperature of the seed region and the thermal stress for crack generation,irradiated with threshold fluence.The numerical results are in good agreement with the experimental ones.     

等离子体辅助沉积HfO_2/SiO_2减反、高反光学薄膜

本文报导了用等离子体辅助（Ｐｌａｓｍａ－ＩＡＤ）沉积技术沉积ＨｆＯ２／ＳｉＯ２减反及高反光学薄膜。在波长１０６４ｎｍ处，ＨｆＯ２／ＳｉＯ２减反膜透过率大于９９．５％，ＨｆＯ２／ＳｉＯ２高反膜反射率大于９９．５％。     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.