溶胶-凝胶ZrO_2/SiO_2薄膜的激光损伤研究

采用溶胶-凝胶工艺分别制备了SiO2和ZrO2单层薄膜、ZrO2/SiO2双层膜以及ZrO2/SiO2多层高反膜。用输出波长为1064nm、脉宽为6.3ns的YAG激光器对薄膜进行了激光损伤实验。观察了薄膜经强激光辐照后的损伤情况,讨论了薄膜的激光损伤行为,并从理论上分析了产生这些损伤的原因,为进一步镀制高质量的ZrO2/SiO2多层高反膜提供了依据。     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

光学薄膜的温度场设计

提出了光学薄膜温度场的概念，研究分析了薄膜光学性质和热，物性质对其温度场的影响，给出了相变光盘薄膜和高功率激光反射膜的具体设计，还给出了相变膜的写入，擦除功率和激光反射膜的破坏阈值。     

Enhanced photocatalytic activity of TiO2 thin film coating on microstructured silicon substrate

Photocatalytic TiO2 thin film is prepared by sol–gel technique on microstructured silicon substrate produced by femtosecond laser cumulative irradiation. The photocatalytic activity is evaluated by the degradation of methylene blue (MB) solution under ultraviolet (UV) irradiation. For 6-ml MB solution with initial concentration of 3.0×10~-5 mol/L, the degradation rate caused by TiO2 thin film of 2-cm~2 area is higher than 70% after 10-h UV irradiation. Microstructured silicon substrate is found to enhance photocatalytic activity of the TiO2 thin film remarkably. The femtosecond laser microstructured silicon substrate is suitable to support TiO2 thin film photocatalysts.     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

High frequency impedance spectroscopy study on Gd-doped CeO<Subscript>2</Subscript> thin films

The gadolinia-doped ceria (GDC) thin films were deposited by pulsed laser deposition. Samples with special geometry were prepared which allowed us to characterize GDC film in across-plane direction. The electrical properties of the films were investigated by means of impedance spectroscopy in the frequency range of 10 Hz to 10 GHz and 380–600 K temperature interval. The data analysis was performed by using appropriate equivalent circuit. The equivalent circuit modeled thin GDC film itself, platinum metal connections (traces) in the dielectric medium of sapphire substrate and interfaces between the film and platinum electrodes. Hence, several factors influenced the impedance spectra, namely the properties of substrate, the oxygen-ion transport in the film, ion blocking at the interface between the film and the electrode, and metal traces. The electrical properties of GDC thin films were compared with these of bulk ceramics and showed similar conductivity and dielectric permittivity values. The study also revealed that measurement data at electrical field frequencies of up to 10 GHz were particularly important to correctly estimate electrical properties of GDC thin films, because at high temperatures the electric response of GDC film shifts to high frequencies (higher than 1 MHz at 600 K). The thin film sample preparation for high frequency measurements and fitting of impedance data by using relatively simple equivalent circuit model is presented.     

多源共蒸发制备高性能REBa2Cu3O7-x涂层导体的进展与展望

REBa2Cu3O7-x (RE：钇、钆等稀土元素,REBCO）高温超导体因其具备较高的不可逆场和上临界场等优越性能,一经发现就备受关注。但由于材料本身固有的陶瓷性及弱连接等属性,导致其实际应用起来难度较大。目前,人们已经发展了诸多制备工艺来克服这些困难,实现了REBCO超导体的实际应用。按照前驱膜沉积方法可将REBCO超导薄膜的制备分为物理法和化学法。本文综述了物理气相沉积（PVD-Physical Vapor Deposition）法中多源共蒸发法制备REBCO超导薄膜的技术起源及演变历程,并与金属有机沉积、金属有机化学气相沉积、脉冲激光沉积等不同方法生产的REBCO超导带材进行对比,突出多源共蒸发法制备的REBCO薄膜性能优异、在商业化生产效率上具有更大的优势。最后对多源共蒸发法制备REBCO超导薄膜进行总结及展望,解决多源共蒸发沉积制备REBCO薄膜的成相机理、提高薄膜的钉扎中心等问题对未来第二代高温超导带材的大规模应用具有重要意义。     

Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

The origin of the super-resolution via a nonlinear thin film

In laser applications, resolutions beyond the diffraction limit can be obtained with a thin film of strong optical nonlinear effect. The optical index of the silicon thin film is modified with the incident laser beam as a function of the local field intensity n(r)∼E²(r). For ultrathin films of thickness d?λ, the transmitted light through the film forms a profile of annular rings. Therefore, the device can be related to the realization of super-resolution with annular pupils. Theoretical analysis shows that the focused light spot appears significantly reduced in comparison with the diffraction limit that is determined by the laser wavelength and the numerical aperture of the converging lens. Analysis on the additional optical transfer function due to the thin film confirms that the resolving power is improved in the high spatial frequency region.     

高重频CO_2激光干扰技术研究

本文针对高重频CO_2激光干扰技术展开分析和研究。首先,概述了激光对抗武器的概念、分类和特点,以及激光对抗武器的干扰与破坏的主要目标对象。其次,分析了红外探测器激光干扰损伤效果的检测方法。再次,分析了光学元件激光变形损伤效果的检测方法以及光学薄膜的激光损伤检测方法。按照上述检测方法进行实验,分别对红外单元探测器、光学元件、光学薄膜和其他材料的激光损伤阈值实验数据进行分析与讨论。最后,总结了全文并且展望了激光干扰技术的发展。     

Effects of 1064 nm laser on the structural and optical properties of nanostructured TiO2 thin film

TiO₂ thin film has been widely used as photoelectrode in dye-sensitized solar cells. It can also be used in quantum dot synthesized solar cells. Study of its effects in different spectrum of light is important for its use in solar cells. We have reported effects of 1064 nm laser on the surface morphology, structural and optical properties of nanostructured TiO₂ thin film deposited on glass substrates using sol-gel spin coating technique. Q-Switched Nd:YAG pulsed laser at various power densities is used in this study. Surface morphology of the film is investigated using X-ray diffraction (XRD) and atomic force microscopy technique. The XRD pattern of as deposited TiO₂ thin film is amorphous and after laser exposure it became TiO₂ anatase structure. Atomic force microscopy of the crystalline TiO₂ thin film shows that the grain size increases by increasing laser power density. The calculations of the band gap are carried out from UV/Visible spectroscopy measurements with JASCO spectrometer. For laser power density of 25 MW/cm² there is an increase in the transmission and it decreases at the value of 38 MW/cm² and band gap decreases with increasing laser power density. Photoluminescence spectra of the crystalline TiO₂ thin film indicate two broad peaks in the range of 415 and 463 nm, one for band gap peak (415 nm) and other for oxygen defect during film deposition process.     

激光诱导铝基碳纳米管薄膜及场发射性能

结合电泳沉积和激光纳米焊接技术在常温下成功制备了铝基单壁碳纳米管(SWCNTs-Al)薄膜。首先,将单壁碳纳米管电泳沉积到铝片基底上,再使用皮秒脉冲激光构建二者的可靠连接。对SWCNTsAl薄膜进行场发射性能测试,开启电压从焊接前的5.1V/μm降低到2.1V/μm,发射电流密度显著提高且更加稳定。这主要是激光纳米焊接后界面接触阻抗减小,场致电子发射更容易实现的结果。基于SWCNTs-Al薄膜的表面形貌图和场发射性能测试结果,确定了最优的激光纳米焊接参数。     

高反射光学薄膜激光损伤研究进展

激光诱导损伤阈值是大功率光学系统中重要参数,其数值大小对激光系统的输出功率与稳定性具有重要影响。为了突破损伤阈值对激光光学系统输出功率的限制,科研人员主要从制备薄膜工艺、激光特性、薄膜特性以及薄膜后工艺等方面开展研究。本文介绍了高反膜理论、制备工艺;综述了近十年来国内外对高反膜损伤研究的成果;阐述了激光特性、薄膜特性以及薄膜后工艺对薄膜损伤阈值的影响。在此基础上,对提高高反膜损伤阈值的研究和发展趋势进行了分析与展望。     

采用泵浦探测技术研究VO2薄膜相变特性

为研究纳秒激光作用下的VO₂薄膜的相变特性,采用泵浦-探测技术进行实验。首先,利用直流磁控溅射法制备VO₂薄膜,经X射线衍射（XRD）和原子力显微镜（AFM）分析表明样品质量较高。然后,测量VO₂薄膜在波长532 nm处的透过率随温度的变化情况,发现透过率随温度升高由32%上升到37%,与红外波段完全相反。在此基础上,选择1 064 nm泵浦光和532 nm探测光研究激光参数中能量密度和重频对VO₂薄膜相变特性的影响,同时结合ANSYS有限元软件对纳秒激光作用下VO₂薄膜的单脉冲温升情况进行分析。结果表明：VO₂薄膜在大于30 mJ/cm²的纳秒激光能量密度作用下,单脉冲温升可达相变温度,最小相变响应时间在14 ns左右。进一步提高纳秒激光能量密度,其相变响应时间略有增加但变化不大。在100 Hz以内改变纳秒激光重频对VO₂薄膜的相变响应基本无影响。VO₂薄膜的相变恢复时间随着纳秒激光能量密度的增大而呈自然指数增加,其变化过程与基底材料和纳秒激光参数密切相关。因此,可以通过优化VO₂薄膜基底材料参数提高其激光防护效果。     

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75×10⁻² Ω cm, exhibiting a factor of 10⁵ higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors.     

Generation of multi-wavelength erbium-doped fiber laser by using MoSe_2 thin film as nonlinear medium and stabilizer

We experimentally demonstrate the application of MoSe2 thin film as a nonlinear medium and stabilizer to generate a multi-wavelength erbium-doped fiber laser. The cooperation of a photonic crystal fiber and a polari?zation-dependent isolator induces unstable multi-wavelength oscillations based on the nonlinear polarization rotation effect. A MoSe2 thin film is further incorporated into the cavity to achieve a stable multi-wavelength.The laser generates 7 lasings with a constant spacing of 0.47 nm at a pump power of 250 mW. The multi?wavelength erbium-doped fiber laser is stable with power fluctuations of less than 5 dB over 30 min.     

Spinning cone water film power meter for high-power CO2 lasers

A laser power meter based on water as an absorbing medium has been developed to measure multi-kilowatt CO₂ laser power with high sensitivity and accuracy. Water absorbs CO₂ laser radiation readily within a very thin layer. Though water has large thermal capacity, due to short absorption length, it could vapourize at high laser powers. In order to circumvent this problem, this power meter has a centre cone and a rapidly spinning water film as the calorimetric medium. The unique feature in this development is the centre cone, which diverges the beam and reduces the power density thus reduces the possibility of vapourization. This minimizes the error in measurements. Due to the rapidly moving fluid film, it exhibits fast response at low as well as high power levels.     

Fabrication of compositionally graded thin films by gravity-assisted pulsed laser ablation

A compositionally graded thin film of FeSi₂ was fabricated by a gravity-assisted pulsed laser ablation (GAPLA) system. By this method, a compositionally graded structure was successfully produced under a gravity field of 5400 G. We demonstrate that the atomic fraction of Fe, the heavier component of the thin film measured by scanning electron microscope/energy dispersive X-ray (SEM-EDX), showed increasing spatial distribution with the direction of gravity. We found that optimal laser fluence exists to give a thin film having the largest possible spatial compositional gradient. We found that surface energy density on the substrate surface is the key parameter to control the composition distribution. Furthermore, the ratio of Fe/Si of the film did not match that of the target. This result shows that the Si component is selectively etched during the film-forming process. Relatively high laser fluence as well as a very narrow space between the target and the substrate are essential to etch the film once it is deposited, in order to re-ionize and etch Si selectively while gravity accelerates both Fe and Si particles to the direction of gravity. We hypothesize that this process accounts for both the change in the stoichiometry and the formation of composition distribution.     

Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO₂/SiO₂ films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.     

Electric field effect in pulsed laser deposition of epitaxial ZnO thin film

We have developed a new system in which thin films can be pulsed laser deposited under an external electric field. Application of 1 kV high voltage to a thin metal wire placed 1 mm above an edge of a 14 mm long substrate distributes electric fields ranging from 4500 V/cm at the left to 50 V/cm at the right side of the substrate. The crystallinity of the ZnO thin film was remarkably improved in the area where the electric field higher than +100 V/cm was applied during the film deposition. Thus, the film growth of ZnO with a strong polarity along the c-axis was verified to depend on an external electric field. PACS 61.10.Nz; 68.55.-a; 72.80.Ga; 78.55.-m; 78.55.-Et