SiC过渡层对氟化类金刚石薄膜附着特性的影响

采用射频反应磁控溅射法在316L不锈钢基片上分别沉积了两种薄膜:一种是氟化类金刚石薄膜(F-DLC),另一种是先镀上一定厚度的SiC过渡层再沉积F-DLC.着重研究了薄膜的附着力随过渡层制备条件的变化规律.结果显示,增加SiC过渡层后薄膜的附着力明显增加,且附着力随SiC过渡层的制备条件有所变化,在射频输入功率为200 W,沉积时间5min制备出的SiC过渡层上再沉积F-DLC时,附着力可达8.7 N,远高于未加过渡层时F-DLC膜的附着力(4 N).通过研究SiC的沉积速率曲线、表面形貌和红外光谱,探讨了SiC过渡层及其制备条件影响薄膜附着力的相关机制.     

吸收辐射复合金刚石膜的制备及光学研究

采用微波等离子体化学气相沉积（MW-PCVD）和直流热阴极辉光放电等离子体化学气相沉积（DC-PCVD）两种方法相结合,制备出一种吸收辐射的复合金刚石膜,它对宽光谱范围的光辐射具有99%—99.2%的吸收率,同时具有较低的反射率和透过率.随着黑色吸收辐射金刚石层厚度的增加,复合金刚石膜的热导率将小幅度降低,但黑色金刚石膜层厚度小于15 μm时,复合金刚石膜的热导率都在16 W·cm^-1·K^-1以上,这满足吸收辐射复合金刚石膜的高导热需求.用热阴极DC-PCVD方 关键词： 吸收辐射 光学材料 金刚石 热导率     

TiN/SiC纳米多层膜的生长结构与力学性能

研究了TiN/SiC纳米多层膜中立方SiC（B1cubic SiC）的形成及其对TiN/SiC多层膜力学性能的影响.结果表明：在TiN/SiC多层膜中，非晶态的SiC层在厚度小于0.6nm时形成立方结构并与TiN形成共格外延生长的超晶格柱状晶，使多层膜产生硬度和弹性模量显著升高的超硬效应，最高硬度超过60GPa.SiC随着层厚的增加转变为非晶相，从而阻止了多层膜的共格外延生长，使薄膜呈现TiN纳米晶和SiC非晶组成的层状结构特征，同时多层膜的硬度和弹性模量下降.TiN/SiC纳米多层膜产生的超硬效应与立方 关键词： 立方碳化硅 TiN/SiC纳米多层膜 外延生长 超硬效应     

硫化锌基底硬质红外保护薄膜技术研究

硫化锌在3~5μm和7.7~9.3μm两个波段具有较高透过率,但其脆性大、耐摩擦性能较差,在其表面镀制类金刚石膜保护膜可显著提高其使用性能。直接在硫化锌基底沉积类金刚石膜难以实现,采用匹配层与过渡层的设计思想,制备出类金刚石膜与硫化锌基底之间相互牢固结合的过渡层。通过等离子体化学气相增强法在过渡层上成功制备类金刚石膜。研究了射频功率、气压等对保护膜系力学性能的影响。结果表明,镀制了硬质保护薄膜的硫化锌窗口在3~5μm和7.7~9.3μm双波段的平均透过率均高于90%,膜层硬度为硫化锌窗口近5倍。经环境试验之后,膜层光学性能与机械性能均无变化。     

铜上采用过渡层沉积类金刚石薄膜的研究

将等离子增强非平衡磁控溅射物理气相沉积(PEUMS-PVD)和电子回旋共振-微波等离子体增强化学气相沉积(MW-ECRPECVD)技术相结合，通过制备不同的过渡层，在铜基上成功地制备了类金刚石膜.拉曼光谱分析表明，所制备的碳膜具有典型的类金刚石结构特征.检测结果表明，随着沉积偏压的增大，D峰和G峰均向高波数漂移，I_D/I_G值增大，表面粗糙度减小，而平均硬度和弹性模量呈先增大后减小的趋势. 关键词： 铜基体 类金刚石膜 过渡层 拉曼光谱     

高导热金刚石薄膜的研究

分析了影响金刚石膜热导率的主要因素，指出声子的散射是造成金刚石膜热导率降低的主要原因．采用光热偏转法实现了金刚石薄膜热导率的测试，测量误差小于5%，从减少杂质和晶界对导热声子的散射入手，研究了在不同的制备方法下碳源气体和金刚石膜内晶粒取向对其热导率的影响．结果表明在低碳源气体浓度下采用微波等离子体化学汽相沉积方法制备的具有较高程度（400）晶粒取向的金刚石薄膜具有高的热导率性质．优化的工艺条件制备出热导率为15.2W/（K·cm）左右的金刚石膜． 关键词：     

一种近似计算金属多层膜界面过渡层厚度的方法

在用小角射线衍射研究离子束溅射法制备的多层膜基本结构时,提出了一个可以计算界面过渡层厚度公式。由实验曲线和文中提出公式得到过渡层厚度,并与用实验曲线和理论曲线进行拟合所得值进行了对比,结果表明这两种方法得到的过渡层厚度基本一致。     

金刚石膜厚度尺寸对热残余应力的影响

 采用有限元方法对钼基体上不同厚度（20~1 000 μm）金刚石膜的热残余应力进行了全面的模拟与分析，得出了它们在膜内分布的等值线图，研究了金刚石膜厚度尺寸对整个膜内的最大主拉应力和界面处每个应力分量最大值的影响。结果表明：在整个膜内，最大主拉应力的位置出现在膜的表面、界面或侧面，其值随膜厚度的增加而增大；在界面处，最大轴向应力随膜厚度的增加而增大，而最大径向压应力、最大周向压应力和最大剪应力则随膜厚度的增加而减小，其中最大剪应力减幅较小；膜厚度越大时，以上各量随厚度增（减）的速度越慢。其结论对于在金刚石膜的制备中合理地选择厚度、有效地进行应力控制有一定的参考价值。     

30.4 nm波长SiC/Mg多层膜反射镜

波长30.4 nm的He-II谱线是极紫外天文观测中最重要的谱线之一,空间极紫外太阳观测光学系统需要采用多层膜作为反射元件。为此研究了SiC/Mg、B4C/Mg、C/Mg、C/Al、Mo/Si、B4C/Si、SiC/Si、C/Si、Sc/Si等材料组合的多层膜在该波长处的反射性能。基于反射率最大与多层膜带宽最小的设计优化原则,选取了SiC/Mg作为膜系材料。采用直流磁控溅射技术制备了SiC/Mg多层膜,用X射线衍射仪测量了多层膜的周期厚度,用国家同步辐射计量站的反射率计测量了多层膜的反射率,在入射角12°时,实测30.4 nm处的反射率为38.0%。     

高硼掺杂金刚石膜电极的电化学应用研究

概述了高硼掺杂金刚石膜电极的电化学研究的最新进展，介绍了高硼掺杂金刚石膜电极的制备，金刚石膜电极在水介质中的电化学行为，金刚石膜电极在废水处理，微量有机化合物成分探测和蜂窝状金刚石电极双电层电容器方面的应用。     

石墨冲击压缩的理论研究

 用统一的排列模型研究石墨在高压下的状态方程。能量由冷能、晶格振动和电子的热贡献三部分组成。利用上述模型计算了石墨的膨胀曲线及石墨的冲击压缩Hugoniot曲线，当V₀＝5.29 cm³/mol时，计算结果与Morgan实验结果一致。     

Effect of Regrown Graphite on the Growth of Large Gem Diamonds by Temperature Gradient Method

Generally, when growing high-quality large gem diamond crystals by temperature gradient method under high pressure and high temperature, the crystal growth rate is only determined by the temperature gradient. However, we find that the seed crystal cannot completely absorb all the diffused carbon sources, when growing gem diamonds under a higher temperature gradient. Other influence factors appear, and the growth rate of growing diamonds is partly dependent on the crystalline form of superfluous unabsorbed carbon source, flaky regrown graphite or small diamond crystals nucleated spontaneously. The present form is determined by the growth temperature if the pressure is fixed. Different from spontaneous diamond nuclei, the appearance of regrown graphite in the diamondstable region can retard the growth rate of gem diamonds substantially, even if the temperature gradient keeps unchanged. On the other hand, the formation mechanism of metastable regrown graphite in the diamond-stable region is also explained.     

凝聚态物质状态方程的一个数值模型

建立了凝聚态物质的一个三项式状态方程：以Faussurier平均原子模型为基础计算电子热压和电子热能;以Cowan模型为基础计算离子热压和离子热能;用基于实验数据的半经验拟合公式计算物质的冷压和冷能。用实验数据检验了用平均原子模型计算的平均电离度。将状态方程与Hugoniot关系式相结合,计算了Be和Al的冲击绝热曲线,结果充分地展现出电子在高温、高密度条件下的壳层结构效应。     

Characteristics of the heating dynamics of a graphite conductor taking into account the skin effect

Calculations for a one-dimensional model of RF heating of a cylindrical graphite conductor have been carried out. The heating dynamics are analyzed in the general form. Conductor temperature profiles and the times for heating up to the graphite sublimation temperature as a function of current and frequency have been obtained. A model of conductor heating with partial return of the energy irradiated by the conductor surface has been considered. Frequency and current ranges have been determined to carry out this graphite sublimation method in a chamber with reflecting walls. The problem is associated with carbon vapor production and subsequent synthesis of fullerenes and other carbon structures.     

A nonlinear thermal spike model for pyrolytic graphite under irradiation with 86Kr and 209Bi high-energy heavy ions

The temperature dependences of the specific heat capacity and thermal conductivity are introduced for a highly oriented pyrolytic graphite; i.e., the nonlinear model of a thermal spike is considered and a comparative analysis of the obtained results and those for the linear model of a thermal spike is performed. The temperature effects observed in the highly oriented pyrolytic graphite with a change in the electron-phonon interaction coefficient g are investigated in detail. It is shown that, under irradiation of the highly oriented pyrolytic graphite by bismuth ions with an energy of 710 MeV, the temperature on the surface of the target within the framework of the nonlinear model can exceed the sublimation temperature, whereas the temperature on the surface of the target under irradiation by krypton ions with an energy of 253 MeV does not exceed the sublimation temperature. The characteristic range of variations in the electron-phonon interaction coefficient g is evaluated. For values of g in this range, the thermal spike model explains the experimental data on the presence of structures in the form of hillocks with craters at their centers on the surface of the highly oriented pyrolytic graphite exposed to irradiation by ²⁰⁹Bi ions and on the absence of such structures in the case of irradiation by ⁸⁶Kr ions.     

Binding energy of metals in pseudo-ion approximation

On the basis of pseudopotential theory we obtain a simple expression for the interaction energy between ions in a metallic system replacing the ion form factor in the direct (Coulomb) interaction by the pseudo-ion form factor of the indirect (conduction mediated) interaction. This substitution can be justified for non-overlapping radially symmetric rigid ions. For the pseudo-ion form factor (which includes ionic and orthogonalization effects) a model function is proposed and the model parameters are determined for lithium, sodium, potassium, rubidium and aluminium by fitting to experimental phonon dispersion curves. Using these form factors and an appropriate dielectric function we proceed to calculate binding energies. One finds that the values obtained show a remarkable agreement with experimental results. This suggests that the proposed reduced expression for the interaction energy and its numerical determination from experimental phonon curves is a good approximation method in evaluating and understanding the binding energy of a metal.     

Defects induced melting in alkali halides

In the present paper we study the pressure dependence of melting of NaCl and CsCl crystals. A formulation has been presented for the pressure dependence of melting temperature on the basis of the vacancy model using the expression for the pressure dependence of the volume of Schottky defects from the Roy-Roy equation of state. Values of pressure derivatives of melting temperature have been calculated at elevated pressures to determine the rate of change of melting temperature with increase in pressures using the data of vacancy formation energy and effective volume of Schottky defects. The vacancy model revised in the present study takes into account the variation of bulk modulus with pressure, whereas in the Ksiazek and Gorecki model, it was treated constant. Results for pressure derivative of melting temperature are calculated for the solids under study. The melting curves have also been obtained and found to compare well with results based on molecular dynamics simulation and experimental data reported in recent literature.     

高压熔渗生长法制备金刚石聚晶中碳的转化机制研究

在6 GPa和1500 ℃的压力和温度范围内, 利用高压熔渗生长法制备了纯金刚石聚晶, 深入研究了高温高压下金刚石聚晶生长过程中碳的转化机制. 利用光学显微镜、X-射线衍射、场发射扫描电子显微镜检测, 发现在熔渗过程中金刚石层出现了石墨化现象, 在烧结过程中金刚石颗粒表面形貌发生了变化. 根据实验现象分析, 在制备过程中存在三种碳的转化机制: 1)金属熔渗阶段金刚石颗粒表面石墨化产生石墨; 2)产生的石墨在烧结阶段很快转变为填充空隙的金刚石碳; 3)金刚石直接溶解在金属溶液中, 以金刚石形式在颗粒间析出, 填充空隙. 本文研究碳的转化机制为在高温高压金属溶剂法合成金刚石的条件下(6 GPa和1500 ℃的压力和温度范围内)工业批量化制备无添加剂、无空隙的纯金刚石聚晶提供了重要的理论指导.     

Metastable Frenkel pair defect in graphite: source of Wigner energy?

The atomic processes associated with energy storage and release in irradiated graphite have long been subject to untested speculation. We examine structures and recombination routes for interstitial-vacancy (I-V) pairs in graphite. Interaction results in the formation of a new metastable defect (an intimate I-V pair) or a Stone-Wales defect. The intimate I-V pair, although 2.9 eV more stable than its isolated constituents, still has a formation energy of 10.8 eV. The barrier to recombination to perfect graphite is calculated to be 1.3 eV, consistent with the experimental first Wigner energy release peak at 1.38 eV. We expect similar defects to form in carbon nanostructures such as nanotubes, nested fullerenes, and onions under irradiation.