共查询到14条相似文献,搜索用时 178 毫秒
1.
在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上 ,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管. 研 究了Si基Bi4Ti3O12薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明,在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi4Ti3O12 铁电薄膜并有利于改善Bi4Ti3O12/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd-VG)特性曲线显示Ag/Bi4Ti3O12 sub>栅n沟道铁电场效应晶体管具有明显的栅极化调制效应.
关键词:
铁电场效应晶体管
4Ti3O12')" href="#">Bi4Ti3O12
存储 特性
溶胶-凝胶工艺 相似文献
2.
利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.
关键词:
铁电性能
4Ti3O12薄膜')" href="#">Bi4Ti3O12薄膜
3.25La0.75Ti3O12薄膜')" href="#">Bi3.25La0.75Ti3O12薄膜
sol-gel法
La掺杂 相似文献
3.
采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词:
sol-gel法
铁电薄膜
4Ti3O12')" href="#">Bi4Ti3O12
C-V特性 相似文献
4.
5.
采用sol-gel法在Pt/TiO2/SiO2/p-Si(100)衬底上制备了Bi3.25La0.75Ti3O12(BLT)铁电薄膜,研究了在750 ℃时不同退火气压(pO2:10-4—3 atm)对薄膜微观结构和电学性能的影响.XRD和拉曼光谱结果表明在10-4和3 atm氧气压下退火
关键词:
3.25La0.75Ti3O12')" href="#">Bi3.25La0.75Ti3O12
铁电性能
sol-gel法
正交化度 相似文献
6.
采用Sol-Gel工艺低温制备了Si基Bi3.25La0.75Ti3O12铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi3.25La0.75Ti3O12薄膜未能充分晶化,晶粒细小且有非晶团聚,介电与铁电性能均较差.高于550℃退火处理的Bi3.25La0.75
关键词:
铁电薄膜
3.25La0.75Ti3O12')" href="#">Bi3.25La0.75Ti3O12
Sol-Gel工艺 相似文献
7.
用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐
关键词:
4Ti4O15')" href="#">SrBi4Ti4O15
Mo掺杂
剩余极化
居里温度 相似文献
8.
采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO2/Si(100)衬底上的铁电性能优良的Sr2Bi4Ti5O18 (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明:薄膜具有单一的层状钙钛矿结构,且为随机取向;薄膜表面光滑,无裂纹,厚度约为725nm;铁电性能测试显示较饱和、方形的电滞回线,当外电场强度为275kV/cm时
关键词:
溶胶-凝胶法
铁电薄膜
2Bi4Ti5O18')" href="#">Sr2Bi4Ti5O18 相似文献
9.
按x=0.00,0.10,0.25,0.50,0.75和1.00,采用固相烧结工艺,制备了不同La掺杂量的SrBi4-xLaxTi4O15的陶瓷样品. 用x射线衍射对其微结构进行了分析,并测量了铁电、介电性能.结果发现,La掺杂未改变SrBi4Ti 4O15的晶体结构.随掺杂量的增加,样品的矫顽场(Ec)下降,剩余极化(2P关键词:
4-xLaxTi4O15')" href="#">SrBi4-xLaxTi4O15
La掺杂
铁电性能
相变温度
弛豫铁电 相似文献
10.
采用了传统的固相烧结工艺,制备了不同Zr和Hf掺杂量的SrBi4Ti4-xZrxO15(x=000,003, 006,010,020)和SrBi4Ti4-xHfxO15(x=000,0005, 0015,0030,0060)的陶瓷
关键词:
4Ti4-xZrxO15')" href="#">SrBi4Ti4-xZrxO15
4Ti4-xHfxO15')" href="#">SrBi4Ti4-xHfxO15
铁电性能
介电性能 相似文献
11.
Pb(Zr0.52Ti0.48)O3 (PZT) thin films with large remanent polarization and SrBi2Ta2O9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages, bilayered Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films were fabricated on Pt/TiO2/SiO2/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2Pr) of 18.37 μC/cm2 than pure SBT and less polarization fatigue up to 1 × 109 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications. 相似文献
12.
The effects of vanadium(V) doping into SrBi4Ti4O15 (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi4Ti4O15 (SrBi4−x/3Ti4−xVxO15, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi4Ti4O15 thin film. The values of remnant polarization (2Pr) and coercive field (2Ec) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm2 and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2Pr value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10−9 A/cm2, which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 1010 switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi. 相似文献
13.
D. Do S. S. Kim S. W. Yi J. W. Kim 《Applied Physics A: Materials Science & Processing》2009,94(3):697-701
Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi4Ti4O15 grown on Bi4Ti3O12, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared
on a Pt(111)/Ti/SiO2/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin
films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P
r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm2 at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 1010 switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi4Ti4O15 on Bi4Ti3O12 ferroelectric thin films were better than those of the SrBi4Ti4O15 grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth
kinetics of SrBi4Ti4O15 on the c-axis-oriented Bi4Ti3O12 layer or on the Pt-coated Si substrate. 相似文献
14.
采用固相烧结工艺,制备了不同La掺杂量(x=0.00,0.25,0.50,0.75,1.00,1.25和1.50) 的(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15 (SrBi8-xLaxT i7O27)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析 ,并测量铁
关键词:
4Ti3O12-SrBi4Ti4 O15')" href="#">Bi4Ti3O12-SrBi4Ti4O15
La掺杂
铁电性能
居里温度
弛豫铁电 相似文献