Ni/a-Si多层膜中固相非晶化反应过程

采用原位X射线衍射法定量地分析研究了多晶Ni/非晶Si成分调制膜中的固相反应非晶化过程.提出了非晶Ni-Si相在Ni/a-Si多层膜固相非晶化反应中的生长模型.并对Ni晶界上的非晶化现象给予热力学和动力学上的解释. 关键词：     

原位等离子体逐层氧化a-Si:H/SiO2多层膜的光致发光研究

采用在等离子体增强化学汽相沉积系统中沉积a-Si:H和原位等离子体逐层氧化的方法制备a-Si:H/SiO2多层膜.改变a-Si:H层的厚度，首次在室温下观察到来自a-Si:H/SiO2多层膜较强的蓝色光致发光和从465到435nm的蓝移.x射线能谱证明，SiO2层是化学配比的SiO2；C-V特性表明，a-Si:H/SiO2界面得到了很好的钝化；透射电子显微镜表明，样品形成了界面陡峭的多层结构.结合光吸收谱和光致发光谱的研究，对其发光机理进行了讨论.用一维量子限制模型对光致发光峰随着a-Si:H层厚度的减小 关键词： a-Si:H/SiO2多层膜 光致发光     

用正电子湮没技术研究a-Si:H/a-SiNx:H多层膜中的界面缺陷

本文报道应用正电子湮没技术(PAT)对a-Si:H/a-SiN_x:H(x≈0.5)多层膜系列样品所进行的研究。发现,由于a-Si:H和a-SiN_x:H在结构方面的失配,导致在a-Si:H/a-SiN_x:H多层膜中的界面区,产生大量缺陷。在a-Si:H子层中,紧靠界面的是应变层,厚度约为8?;在应变层之后是过渡层,厚度约为50?。在过渡层中存在大量缺陷,这就是所谓界面缺陷。 关键词：     

用正电子湮没技术研究a-Si:H/a-SiN_x:H多层膜中的界面缺陷

本文报道应用正电子湮没技术(PAT)对a-Si:H/a-SiNx:H(x≈0.5)多层膜系列样品所进行的研究。发现,由于a-Si:H和a-SiNx:H在结构方面的失配,导致在a-Si:H/a-SiNx:H多层膜中的界面区,产生大量缺陷。在a-Si:H子层中,紧靠界面的是应变层,厚度约为8;在应变层之后是过渡层,厚度约为50。在过渡层中存在大量缺陷,这就是所谓界面缺陷。     

Ni在非晶Si中扩散机制的原位X射线衍射研究

通过对非晶Ni和Si多层组分调制膜(ML)中Ni和Si互扩散规律的原位X射线衍射法研究,考察了金属Ni在非晶Si(a-Si)中的扩散现象。得到了较低温度下Ni在非晶Si中扩散系数及规律,并且提出了Ni在a-Si中受非平衡缺陷延迟的间隙扩散机制。这个扩散模型较好地解释了Ni在a-Si中的扩散。 关键词：     

周期性多层膜合金化制取的TiNi形状记忆薄膜的室温微结构特征

用掠入射X射线衍射及X射线反射对磁控溅射制取的等原子比Ni／Ti周期性多层膜晶化热处理 后的TiNi形状记忆薄膜室温微结构进行了研究.TiNi形状记忆薄膜在深度方向的相分布和元 素分布是不均匀的，都是一种多层结构.室温下其微结构特征为最外层是Ti氧化膜，再下层 是Ti₃Ni₄,B19’马氏体相和少量的B2奥氏体相的三相混合物，靠近 基体为主要相成分马氏体，最后是Ni和Si界面反应层.X射线反射率的拟和结果显示薄膜微结 构的分析是合理的.薄膜中相深度分布的不均匀性主要是动力学因素决定的. 关键词： 相深度分布 形状记忆 TiNi 多层膜     

界面对ZrN/TaN纳米多层膜固氦性能的影响

采用射频磁控溅射方法, 在混合气氛下制备了ZrN/TaN多层膜. 利用X射线衍射、慢正电子束分析、增强质子背散射、扫描电子显微镜, 分别对ZrN/TaN多层膜中相结构、氦相关缺陷、氦含量、截面形貌等进行了分析. 结果表明, 调制周期为30 nm的ZrN/TaN多层膜在600℃退火后, 氦的保持率仍能达到45.6%. 在适当的调制周期下, ZrN/TaN多层膜能够耐氦损伤并且其界面具有一定的固氦性能. 关键词： ZrN/TaN 纳米多层膜 界面 固氦     

磁控溅射制备Ni/Ti多层膜表面粗糙度

采用磁控溅射方法制备了周期数分别为10,30,50和75的Ni/Ti多层膜,利用X射线掠入射反射测量了多层膜表面和界面的状态,并用原子力显微镜测量了多层膜的表面粗糙度,研究了不同周期数的Ni/Ti多层膜表面粗糙度的变化规律。结果表明:Ni/Ti多层膜表面粗糙度随着膜层数增加而增加,当Ni/Ti多层膜的周期数从10变化到75时,其表面粗糙度由0.80 nm增大到1.69 nm。实验数据拟合表明:Ni/Ti多层膜表面粗糙度与周期数成3次方关系;但在周期数较小时,粗糙度与周期数成线性关系。     

周期性多层膜合金化制取的NiTi形状记忆薄膜的相深度分布

用掠入射X射线衍射对磁控溅射制取的等原子比Ni/Ti周期性多层膜晶化热处理后的相深度分布进行了分析. Ni-Ti形状记忆薄膜在深度方向的相分布是不均匀的,表现为靠近外表面是Ti3Ni4沉淀相、马氏体相和少量奥氏体相的三相混合区,靠近基体是单一的马氏体相区,薄膜和基体发生了界面扩散与反应. 周期厚度对薄膜的相深度分布有一定影响.     

界面和择优取向对TiN/ZrN纳米多层膜硬度变化的影响

利用射频反应磁控溅射方法，制备了调制比约为4，调制周期不同的一系列TiN/ZrN纳米多层膜. 利用X射线衍射仪(XRD)、高分辨电子显微镜(HRTEM)和纳米压痕仪(Nanoindentation)对多层膜的调制结构、界面状态和力学性能进行了表征. 研究结果表明TiN/ZrN多层膜具有很好的调制结构，但是在TiN层和ZrN层之间存在一定厚度的界面混合层. 力学性能分析表明：当调制周期小于15 nm时，TiN/ZrN多层膜的硬度介于单一TiN和ZrN薄膜的硬度之间；当调制周期为15.24 nm时，硬度达到最大，但随着调制周期增加，多层膜的硬度基本上保持为常数. 分析了TiN/ZrN多层膜硬度变化的机制，认为界面厚度和择优取向是导致硬度变化的主要原因. 关键词： TiN/ZrN多层膜 界面宽度 择优取向 硬度变化     

二元合金多层膜中的固态反应非晶化

本文报道在Fe-Ti和Fe-Si系中发生的固态反应非晶化,肯定了Ni-Ti系中非晶相的形成,认为这类新型非晶化主要是一种动力学相竞争的结果,并初步讨论了在固态反应中形成非晶相的动力学判据。 关键词：     

Solid-state interfacial reaction and asymmetric growth of amorphous interlayers in Ni/Nb multilayers. Molecular-dynamics simulation together with experiments

An embedded-atom potential for the Ni-Nb system is constructed using physical properties obtained from first-principle calculations. Employing the potential, molecular-dynamics simulations are performed to study the interfacial reaction in Ni/Nb multilayers upon annealing at medium temperatures. The results show that a preset disordered interlayer, which is obtained by exchanging Ni and Nb atoms in the interfaces, may act as a nucleus of amorphous phase and is usually necessary for amorphization. It is found that the growth of the amorphous interlayer is in a planar mode and exhibits an asymmetric behavior due to a faster consumption of Ni than that of the Nb layer; this is also indeed observed experimentally. Moreover, performing a simulation with solid solution models, it is found that the Nb lattice can accommodate a large number of Ni atoms and still retain a crystalline structure, while a small amount of Nb atoms induce a spontaneous decay of the Ni lattice. Such differences in solid solubility is thought to be the physical origin of the asymmetric growth observed in experiments and simulations. Received 7 June 1999 and Received in final form 12 January 2000     

Proton irradiation and solid state reaction of Fe−Zr multilayers

The amorphization of Fe−Zr multilayers due to ion-beam mixing and solid state reaction is studied in detail using the CEMS and CXMS. The nature of the amorphous Fe−Zr phase produced by both processes is the same suggesting that diffusion of Fe is an important mechanism during ion-beam mixing.     

Mössbauer effect investigation of amorphous FeZr interlayers formed by solid state reaction

Recent investigations claimed the complete amorphization of elemental FeZr multilayer films by solid state reaction during vacuum annealing. In the present study it is established by⁵⁷Fe conversion electron Mössbauer spectroscopy (CEMS) that annealing under ultrahigh vacuum conditions does not lead to complete amorphization: only a maximum thickness of ≈14 Å interfacial α-Fe is transfered into the amorphous phase between 620–660 K. This thin amorphous layer apparently acts as a diffusion barrier and prohibits further growth of the amorphous phase. The average composition of the amorphous interfacial layer was determined from the Mössbauer spectral parameters.     

Diffusion-induced decay of disclinations and solid state amorphization in mechanically alloyed materials

A theoretical model is proposed which treats the diffusion-induced decay of fragment boundary disclinations as being a micromechanism for the solid state amorphization in mechanically alloyed materials. Within the framework of the suggested model the kinetics of amorphous-phase nucleation centres (spread cores of the decayed disclinations) is studied. In doing so, kinetic equations are suggested and solved, which describe the evolution of the radius of the amorphous core of the decayed disclination.     

Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation

The origin of the ion beam mixing effect, which causes the formation of smooth silicide films, is investigated for the Ti/Si solid-phase silicidation reaction. Ge ion beam mixing of a conventional Ti/c-Si structure with an oxide-contaminated interface shows an obvious effect when the implant conditions are such that the Ti/Si interface is amorphized. On the other hand, silicidation without ion mixing for Ti/a-Si and Ti/c-Si structures with oxide-free interfaces, prepared by sequential deposition in UHV, results in smooth and rough film surfaces, respectively. This strongly suggests that the ion beam mixing effect primarily comes from the amorphization of the Si substrate surface rather than the destruction of the interfacial oxide film.     

机械合金化致二元过渡金属非晶态合金形成规律的探讨

运用Ｍｉｅｄｅｍａ参数和尺寸因子Ｒ分别构成Ｍｉｅｄｅｍａ参数坐标和三维化学坐标成功地研究机械合金化二元过渡金属非晶合金的形成规律。基于实验事实所确定的机械合金化二元非晶的形成条件分别是见原文，以上两判据区分机械合金化非晶态合金形成与否的准确度分别为８０％和８８％。从微观原子的相互作用以及固态反应非晶化热力学和动力学的角度分析了以上参数在描述机械合金化二元过渡族合金体系非晶形成规律的内在物理涵义以及与固态反应非晶化实现所需条件的联系。 关键词：     

Self supported nickel antimonides based electrodes for Li ion battery

Self-supported nickel antimonides/Ni architectured electrodes were prepared by solid state reaction from Ni thin film, Ni foam and Ni nanorods. This specific design is expected to optimize both NiSb_x/Ni-current collector and NiSb_x/electrolyte interfaces of the electrode in the Li ion battery. This new electrode preparation process is based on solid state reaction of antimony with the nickel architectured substrate. Preliminary electrochemical tests of the as-obtained self supported antimonide electrodes show improvement in the capacity retention of the NiSb_x active material.