TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method. With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.     

利用多层膜生长技术制备纳米印章模板

在纳米印章技术中，为克服电子束刻蚀制备50nm以下线条的技术难点，利用等离子增强化学 气相沉积技术制备了a-Si/SiN_x多层膜，再利用选择性湿法腐蚀或干法腐蚀在横 截面上制备出浮雕型一维纳米级模板. 多层膜子层之间界面清晰陡峭，可以在纳米量级对子 层厚度进行控制，得到了侧壁在纳米尺度上平滑的模板. 通过控制多层膜子层的生长时间， 制备出线条宽度和槽状宽度均为20nm的等间距模板，品质优于电子束刻蚀技术制备的模板. 关键词： 纳米印章模板 多层膜生长技术     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

纳米银六角阵列在掺氧氮化硅中的局域表面等离激元共振特性仿真

通过COMSOL Multiphysics 和 Lumerical FDTD solution对不同尺寸纳米银六角阵列在非晶态掺氧氮化硅(a-SiN_x:O)介质中的局域表面等离激元共振(LSPR)特性进行仿真, 计算结果表明半径为25 nm的纳米银六角阵列形成的局域表面等离激元(LSP)与厚度为70 nm的a-SiN_x:O的蓝光发射(460 nm)的共振效果最为显著, 随着纳米银颗粒尺寸的增大其消光共振峰红移. 在460 nm波长激发下半径为25 nm的纳米银阵列在a-SiN_x:O中的极化强度和表面极化电荷的分布模拟证明了该阵列在460 nm激发下形成的LSP为偶极子极化模式, 通过对该尺寸的纳米银阵列的LSP 在a-SiN_x:O中的最强垂直辐射空间计算, 获得了银颗粒上方a-SiN_x:O的最佳厚度为30 nm, 仿真结果对硅基蓝光发射器件(450–460 nm)的设计提供了重要的理论参考.     

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Nanowire devices with back gate are fabricated in a heavy doped ultra thin SOI layer by electron beam lithography. Regular and periodic Coulomb oscillations with single dot behavior are observed in an appropriate back gate voltage range. The oscillation period can be determined by the back gate capacitance. The role of the back gate can control the electrical characteristics from the multi-dot junction regimes to the single dot junction regimes. These Coulomb oscillations due to single-electron tunneling are not smeared out by thermal vibration energy when the temperature is less than 40 K.     

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

The nanocrystal-Si quantum dot （nc-Si QD） floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition （PECVD） and furnace oxidation technology. The capacitance hysteresis in capacitancevoltage （C - V） measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage （I - V） measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is in- vestigated systematically. Moreover, the charge density （10^-7 C/cm^2） calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, △VG, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.