透明导电氧化物的原理、问题与研究分析

现代光电子产品和能源技术都大量使用透明导电氧化物(TCO)薄膜.由于太阳能电池、平板显示器、发光二极管、短波长激光器、节能玻璃窗等应用领域日益增长的需求,TCO薄膜获得了越来越广泛的应用.文章总结了TCO薄膜的功能原理、应用需求和当前的研究方向,重点分析了p型TCO薄膜研究所要解决的关键问题(其中包括掺杂非对称性,性能退化与缺陷的生成,结构和变化的关系),指出了p型TCO薄膜制备的关键因素,研究的热点问题和蕴藏的研究机会.     

Observation of lateral long range order in superconducting FeTe thin films

<正>We find that the superconductivity in the thin films of the formerly believed non-superconducting parent compound FeTe is accompanied by an emergence of second order with a correlation length of 742 nm and 258 nm at 10 K and 300 K,respectively.The structural phase transition found in iron pnictide superconductors,in non-superconducting FeTe bulk samples,and in FeSe superconducting thin films is not observed in the superconducting FeTe thin films.The interplay between superconductivity and long range order may suggest the crucial role of competition between electronic localization and itinerancy which leads to strong quantum fluctuations in the FeTe system.     

高斯多峰拟合在径向分布函数中的应用

利用同步辐射X射线散射法测定了盐水摩尔比分别为1:30和1:14的Rb2SO4和Cs2SO4的水溶液结构. 通过对散射数据的处理, 获得了两种溶液的径向分布函数. 采用多峰拟合中的Gaussian法对径向分布函数中金属离子第一水合层附近的叠加峰进行了处理, 多峰拟合结果与实验结果吻合得很好. 通过将拟合数据与已报道的溶液结构和晶体结构对比分析, 确定了每个拟合峰的归属.多峰拟合结果分析表明, Rb+和Cs+第一水合层配位数为6, 为变形的八面体构型. 两种溶液中都存在着金属离子和硫酸根离子接触离子对: Rb—S 和Cs—S 的特征距离分别为0.407和0.427 nm. 研究证实, 多峰拟合有助于阐述溶液中离子的水合结构.     

Sb掺杂SrTio3透明导电薄膜的光电子能谱研究

用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电 关键词： 光电子能谱 光学透过率 脉冲激光沉积薄膜     

YBa2Cu3O7-δ薄膜微结构的同步辐射三维倒空间扫描研究

高温超导薄膜因其微波表面电阻低,可用于尖端高温超导微波器件的制作.然而由于高温超导材料特殊的二维超导机制和极短的超导相干长度,高温超导材料的微波表面电阻对微结构特别敏感.为了探究高温超导材料微结构和微波电阻的联系,采用脉冲激光沉积(PLD)技术在(001)取向的MgO单晶衬底上生长了不同厚度的YBa₂Cu₃O_7-δ(YBCO)薄膜.电学测量发现不同厚度的样品超导转变温度、常温电阻差别不大,但超导态的微波表面电阻差异很大.同步辐射三维倒空间扫描(3D-RSM)技术对YBCO薄膜微结构的表征表明:CuO₂面平行于表面晶粒(c晶)的多寡、晶粒取向的一致性是造成超导态微波表面电阻差异的主要原因.     

Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates

We report comprehensive investigations into the structure of high-quality (111)-oriented SrRuO₃ films on SrTiO₃ substrates to elucidate the effect of (111) heteroepitaxial strain. We found that SrRuO₃ film with a thickness of ～ 40 nm is compressively strained in plane on the substrate with full coherency. Nevertheless, the out-of-plane spacing is almost the same as in the bulk, which is at odds with the conventional paradigm. By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images, we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c⁺ octahedral tilting and the formation of three equivalent domain structures on the (111) SrTiO₃ substrate. This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the (111) heteroepitaxial strain.     

In-situ monitoring of EuTiO_3 and SrTiO_3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO3 and SrTiO3 during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at auti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.     

Epitaxial growth of Ge_(1-x)Sn_x films with x up to 0.14 grown on Ge(00l) at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge(00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge–Ge, Ge–Sn,Sn–Sn vibrational modes. The Sn–Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

周期性多层膜合金化制取的TiNi形状记忆薄膜的室温微结构特征

用掠入射X射线衍射及X射线反射对磁控溅射制取的等原子比Ni／Ti周期性多层膜晶化热处理 后的TiNi形状记忆薄膜室温微结构进行了研究.TiNi形状记忆薄膜在深度方向的相分布和元 素分布是不均匀的，都是一种多层结构.室温下其微结构特征为最外层是Ti氧化膜，再下层 是Ti₃Ni₄,B19’马氏体相和少量的B2奥氏体相的三相混合物，靠近 基体为主要相成分马氏体，最后是Ni和Si界面反应层.X射线反射率的拟和结果显示薄膜微结 构的分析是合理的.薄膜中相深度分布的不均匀性主要是动力学因素决定的. 关键词： 相深度分布 形状记忆 TiNi 多层膜     

在织构Ag基带上制备YBa2Cu3O7-δ超导膜

在织构Ａｇ基带上用脉冲激光方法沉积ＹＢａ２Ｃｕ３Ｏ７－δ超导膜,直流电阻法测量超导膜的临界电流密度为４×１０＾５Ａ／ｃｍ＾２。结合生成膜的结构分析,对ＹＢａ２Ｃｕ３Ｏ７－δ超导体在Ａｇ基带上的生长机制进行讨论。