Ni-Si多层膜中固态非晶化反应的热力学与动力学过程

研究了Ni/非晶Si(a-Si)多层组分调制膜(ML)中界面上的固相反应。根据计算的亚稳自由能图,对界面上固相反应形成非晶态进行了热力学与动力学的分析。提出了Ni/a-Si多层膜中的固相反应的动力学模型。 关键词：     

Ni/a-Si多层膜中固相非晶化反应过程

采用原位X射线衍射法定量地分析研究了多晶Ni/非晶Si成分调制膜中的固相反应非晶化过程.提出了非晶Ni-Si相在Ni/a-Si多层膜固相非晶化反应中的生长模型.并对Ni晶界上的非晶化现象给予热力学和动力学上的解释. 关键词：     

Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究

采用x射线光电子能谱(XPS)和俄歇电子能谱(AES)对Au/a-Si:H界面进行了研究。实验表明,Au/a-Si:H界面最初形成过程是以金属团生长形式出现,当Au淀积量超过一定值后,Au和Si开始互扩散并进行化学反应,结果形成Au-Si互溶区。利用光发射方法证实,热处理Au/a-Si:H界面导致淀积膜中Si岛形成。 关键词：     

高速率沉积磁控溅射技术制备Ge点的退火生长研究

采用磁控溅射技术在Si衬底上以350?C沉积14 nm的非晶Ge薄膜,通过退火改变系统生长热能,实现了低维Ge/Si点的生长.利用原子力显微镜(AFM)和拉曼(Raman)光谱所获得的形貌和声子振动信息,对Ge点的形成机理和演变规律进行了研究.实验结果表明:在675?C退火30 min后,非晶Ge薄膜转变为密度高达8.5×109cm-2的Ge点.通过Ostwald熟化理论、表面扩散模型和对激活能的计算,很好地解释了退火过程中,Ge原子在Si表面迁移、最终形成纳米点的行为.研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法,可为自组织量子点生长实验提供一定的理论支撑.     

注入Mo 在Zr57Nb5Cu15.4Ni12.6Al10非晶合金中的扩散

通过二次离子质谱仪(SIMS)研究了Mo在Zr57Nb5Cu15.4Ni12.6Al10非晶合金中的扩散,并计算出其扩散激活能Q和前置系数D0分别为1.95 eV和1.13×10-5 m2s-1.根据Stokes-Einstern关系式研究了玻璃转变温度以下593-673 K之间Zr57Nb5Cu15.4Ni12.6Al10非晶合金的黏滞特性,得到的黏滞系数从593 K的1.07×1010Poise降到673 K的1.42×108 Poise.     

纳米晶Fe73.5Cu1Nb3Si13.5B9晶间非晶相结构弛豫与模量的振荡变化

采用X射线衍射(XRD),杨氏模量测量方法研究了非晶态Fe73.5Cu1Nb3Si13.5B9合金500℃等温晶化时,纳米α-Fe(Si)晶相的平均晶粒尺寸(d),晶化体积分数(Vc),杨氏模量(E)随保温时间(t)的变化.d-t关系具有阶梯式长大特征,而E-t关系则呈现相应的周期性变化.分别计算了纳米α-Fe(Si)晶生长前沿非晶区的化学成分以及晶间非晶区平衡化学成分.由Fick扩散方程计算晶间非晶区成分均匀化的时间,与纳米α-Fe(Si)阶梯式长大周期相当.E-t关系的振荡性变化可能是由扩散控制的纳米α-Fe(Si)晶相的阶梯式长大与晶间非晶区周期性弛豫引起的.     

a—Si：O：H薄膜微结构及其高温退火行为研究

以微区Raman散射、X射线光电子能谱和红外吸收对等离子体增强化学气相沉积（PECVD）法制备的氢化非晶硅氧（a-Si:O:H)薄膜微结构及其退火行为进行了细致研究。结果表明a-Si:O:H薄膜具有明显的相分离结构,富Si相镶嵌于富O相之中,其中富Si相为非氢化四面体结构形式的非晶硅（a-Si),富O相为Si,O,H三种原子随机键合形成的SiOx:H(x≈1.35)。经1150℃高温退火,薄膜中的H全部释出;SiOx:H(x≈1.35)介质在析出部分Si原子的同时发生结构相变,形成稳定的SiO2和SiOx(x≈0.64);在析出的Si原子参与下,薄膜中a-Si颗粒固相晶化的成核和生长过程得以进行,形成纳米晶硅（nc-Si),研究发现此时的薄膜具有典型的壳层结构,在nc-Si颗粒表面和外围SiO2介质之间存在着纳米厚度的SiOx(x≈0.64)中间相。     

a-Si∶O∶H薄膜微结构及其高温退火行为研究

以微区Raman散射、X射线光电子能谱和红外吸收对等离子体增强化学气相沉积(PECVD)法制备的氢化非晶硅氧(a-Si∶O∶H)薄膜微结构及其退火行为进行了细致研究.结果表明a-Si∶O∶H薄膜具有明显的相分离结构,富Si相镶嵌于富O相之中,其中富Si相为非氢化四面体结构形式的非晶硅(a-Si),富O相为Si,O,H三种原子随机键合形成的SiO_x∶H(x≈1.35).经1150℃高温退火,薄膜中的H全部释出;SiO_x∶H(x≈1.35)介质在析出部分Si原子的同     

a-SiCx:H/nc-Si:H多层薄膜的室温时间分辨光致可见发光

在等离子体增强化学气相沉积(PECVD)系统中,通过控制进入反应室的气体种类逐层沉积非晶SiCx：H(a-SiCx：H)和非晶Si：H(a-Si：H)薄膜,然后经过高温热退火处理,成功制备了晶化纳米a-SiCx：H／nc-Si：H(多晶SiC和纳米Si)多层薄膜。利用截面透射电子显微镜技术分析了a-SiCx：H／nc-Si：H多层薄膜的结构特性。通过对晶化样品的时间分辨光致发光谱的研究,结果表明：随着退火温度的升高,发光峰位置开始出现一些红移现象：当退火温度为900℃时,样品的发光强度和发光衰减时间分别达到最大值和最小值;随着退火温度的继续升高,发光峰位置又开始出现蓝移现象。由此探讨纳米a-SiCx：H／nc-Si：H多层薄膜的发光特性和发光机理。     

Ni/Ti双金属层的离子束混合与固态反应

本文用慢加热法和离子束混合法在Ni/Ti双金属层上形成无定形混合相。TEM截面图表明扩散过程导致非晶相形成,Ni为主要扩散元素。实验结果还表明离子束轰击增强了Ni的扩散。 关键词：     

非晶调制多层膜Nb/Si中的互扩散研究

利用原位Ｘ射线衍射技术得到非晶调制多层膜Ｎｂ／Ｓｉ中的互扩散系数与退火温度的关系，调制周期Ｌ＝３.２ｎｍ的非晶调制多层膜是用粒子溅射方法制备的．温度范围为４２３—５２３Ｋ的有效互扩散系数通过原位测量多层膜的一级调制峰强度与退火温度之间的关系而得到．利用缺陷陷阱延迟扩散机制解释了所得到的扩散系数与退火温度的关系．建立了可以解释较小前置系数的模型 关键词：     

Surface diffusion of Ni on Si(111) with coadsorption of Co

The effect of the coadsorption of Co and Ni on an Si(111) surface structure and on the diffusion of adsorbed atoms is investigated by low-energy electron diffraction and Auger electron spectroscopy. It is established that surface structures similar to those formed with the adsorption of Co alone are formed with the Ni and Co coadsorption on an Si(111) surface. It is found that the contribution of surface diffusion to the transport of Ni atoms is sharply higher on an Si(111) surface with submonolayer Co concentrations in the temperature range 500–750 °C than for a pure surface, where the main mechanism of Ni transport along the surface is diffusion of Ni atoms through the bulk of Si. Fiz. Tverd. Tela (St. Petersburg) 41, 1489–1494 (August 1999)     

Temperature and substrate dependence of structure and growth mechanism of carbon nanofiber

The carbon nanofibers were grown on Ni/Si and Ni/Ti/Si substrates in 1 atm CH₄ atmosphere at 640 °C and 700 °C by thermal chemical vapor deposition method. The carbon nanofibers were characterized by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectrometry for morphology, microstructure, and crystallinity. The electron emission property of carbon nanofibers was also investigated by current-voltage (I-V) measurement. The results showed that the solid amorphous carbon nanofibers could be grown on Ni/Si substrate at 640 °C through tip growth mechanism, the carbon nanotubes could be grown on Ni/Si substrate at 700 °C through tip growth mechanism, and the carbon nanotubes could be grown on Ni/Ti/Si substrate at 700 °C through root growth mechanism.     

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 °C, could diffuse through c-NiW at 550 °C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.     

Change in the nature of the Ni diffusion mechanism on the Si(111) surface with adsorption of Co atoms

The diffusion of Ni on a Si (111) surface is investigated by LEED and Auger electron spectroscopy. It is found that, in contrast to the process on the initially clean Si (111)−7×7 surface, on Si (111) surfaces with submonolayer Co coverages the nature of the Ni transport mechanism changes at a temperature of about 750 °C, and the Ni surface diffusion coefficients increase sharply below this temperature. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 9, 611–614 (10 November 1997)     

Photoluminescence from amorphous silica nanowires synthesized using TiN/Ni/SiO2/Si and TiN/Ni/Si substrates

Photoluminescence characteristics of amorphous silica nanowires (a-SiONWs) grown on TiN/Ni/Si and TiN/Ni/SiO₂ substrates have been studied. A-SiONWs grown on TiN/Ni/Si substrates show a Si-rich composition compared to those grown from TiN/Ni/SiO₂/Si. The emission characteristics of the nanowires were found to depend on the type of substrate. By annealing the a-SiONWs grown on TiN/Ni/Si in air, emission bands shift from blue to green bands. It is likely that silicon to oxygen ratio is an important factor in deciding the types of defects and emission bands of amorphous silica nanowires.     

Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?³ by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni₃Si and the local temperature is 1389 K if the interlayer compound is Ni₂Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000     

Ball milling of Fe40Ni40P20-xSix (x = 6, 10 and 14): production and characterization

Progress in the ball milling amorphization of elemental powders with the overall composition Fe₄₀Ni₄₀P_{20 ? x}Si_x (X = 6, 10 and 14) and thermally induced crystallization of obtained alloys were characterized by differential scanning calorimetry, X-ray diffraction and transmission Mössbauer spectroscopy (TMS). Diffusion of Si into Fe and Ni alloys promotes the formation of the amorphous phase, via previous formation of (Fe, Ni) phosphides. After milling for 32–64 h, most of the powders are amorphous but bcc Fe(Si) crystallites remain (about 5% in volume). TMS results indicate that homogenization of the amorphous phase occurs by interdiffusion of Ni and Fe in Fe(Si,P)-rich and Ni(Si,P)-rich zones respectively. Annealing induces structural relaxation of stresses induced by milling, growth of bcc Fe(Si) crystallites, precipitation of bcc Fe(Si) and fcc Ni–Fe, and minor phases of Ni-rich silicides and (Fe, Ni) phosphides. The main ferromagnetic phase is bcc Fe(Si) for Fe₄₀Ni₄₀P₁₀Si₁₀ powders obtained after milling for 32 h. However, it is fcc Fe–Ni for the same alloy after milling for 64 h. In the later powders, as well as for alloys with x = 6 and 14 milled for 32 h, the fcc Fe–Ni shows the Invar magnetic collapse.