半胱氨酸在银基底表面吸附机理的拉曼光谱研究

以具有表面增强拉曼散射 (SERS)活性的银镜为基底 ,将半胱氨酸组装到银基底表面 ;主要通过调整氨基酸溶液的pH值控制该组装过程。利用表面增强拉曼散射光谱对半胱氨酸小分子在银基底表面的吸附方式、作用机理进行了详细的探讨和研究。结果表明 ,只有当溶液的pH值接近或高于等电点时 ,半胱氨酸分子才能以 -COO- Ag+形式被有效组装到银基底的表面 ,形成表面带有自由疏基 (-SH)的半胱氨酸单分子膜 ,从而为硒代环糊精以 -S-Se-键形式组装到上述组装体系的表面提供了可能。本文的研究将为利用分子光谱探索含硒酶活性机理和进一步提高酶活性奠定基础。     

溶液酸碱性对异构体氨基酸单分子膜影响的表面增强拉曼光谱研究

利用表面增强拉曼(SERS)光谱技术研究比较了在粗糙化银电极表面吸附的亮氨酸与异亮氨酸自组装单层膜结构以及溶液酸碱性对分子吸附作用的影响。研究表明在粗糙化银电极表面两种氨基酸分子主要是以COO-为作用位点进行吸附的。进一步的研究也揭示溶液pH值的变化没有显著改变两种氨基酸分子在银电极表面以去质子化羧基吸附为主的特征,但对于羧基吸附作用的影响程度及其变化规律是迥异的,对氨基的影响也有一定的差异。     

溶液酸碱性对金纳米粒子在端基功能化单分子膜表面组装影响的SERS光谱研究

在4,4’-二硫联吡啶在Au表面形成自组装单分子层膜的基础上,采用表面增强拉曼散射光谱(SERS)研究了在不同pH值条件下金纳米粒子在4,4’-二硫联吡啶自组装单分子膜/Au体系表面的组装。研究结果表明,由于处于单分子膜表面的吡啶环中氮原子的质子化程度随溶液环境中pH值的变化而变化,使得金纳米粒子与单分子膜表面间的结合作用程度不同,由此会引起金纳米粒子在单分子膜表面的覆盖度存在差异,并最终导致所观测到的4-巯基吡啶自组装单分子膜的SERS光谱强度存在明显的差异。而且,令人感兴趣的是,所观测到的SERS谱峰强度随金纳米粒子组装时pH值的变化呈现出明显的规律性。结合分子结构特征的分析,初步阐明了SERS谱峰强度随pH值这一组装条件的改变而发生规律性变化的内在原因。     

银电极表面上C60薄膜的表面增强拉曼光谱研究

在银电极表面形成一层C60薄膜,分别在乙腈溶液和水溶液中进行表面增强拉曼光谱(SERS)研究并将两者进行比较,从而消除了溶液中的C60干扰表面吸附C60的SERS谱图的可能性.研究结果表明,C60分子对称性的降低导致SERS谱峰发生了分裂;表面电磁场的作用使得光谱选律在SERS效应中被拓宽,产生了新的拉曼谱峰.该结果与团簇吸附在粗糙银电极表面的C60分子的研究结果相似.与之不同的是在乙腈溶液和水溶液中的SERS谱图的低波数区内分别在348和311 cm-1左右出现一个新峰,经过分析可认为该峰与C60-金属基底的相互作用有关.     

烷基硫醇/金自组装单分子膜表面上金属沉积特性研究进展

本文介绍了金属原子在烷基硫醇自组装单分子膜表面的再沉积行为,从理论上分析了其作用机理,归纳出了金属在自组装单层膜表面的再沉积规律。     

烷基硫醇/金自组装单分子膜表面上金属沉积特性研究进展

本文介绍了金属原子在烷基硫醇自组装单分子膜表面的再沉积行为,从理论上分析了其作用机理,归纳出了金属在自组装单层膜表面的再沉积规律。     

银纳米粒子自组装复合LB膜的结构与性质

纳米粒子的自组装和有序组装膜的结构与性质近年来受到了人们的广泛关注,纳米粒子的表面结构与性质对由其组装成的有序膜的结构与性质有直接的影响。文章报道了利用自组装技术制备的银纳米粒子与双亲有机分子的单层和多层复合LB膜,通过吸收光谱和表面增强拉曼光谱研究了银纳米粒子与吸附分子间的相互作用,探讨了复合膜的成膜特性及银纳米粒子的拉曼增强特性。十八胺/银粒子复合LB膜的吸收光谱及拉曼光谱显示,十八胺分子与银纳米粒子表面的活位通过NH₂中的氮原子以复合体的形式结合;同时,在激发光的作用下复合体可能存在光催化过程。根据银粒子复合LB膜的实验结果,十八胺和十八酸之间的反应产物在复合膜中起空间位阻作用,与银粒子表面的相互作用较弱。     

苯甲酸的羟基取代物在银纳米颗粒表面的吸附行为的研究

分别以覆银滤纸和银胶溶液中的银纳米颗粒为基底,对苯甲酸的三种羟基取代物(n-HBA,n=P,M,O)进行了表面增强拉曼散射(SERS),发现PHBA分子在覆银滤纸上的SERS光谱和银胶中的SERS光谱明显不同,而MHBA分子和OHBA分子在两种基底上的SERS光谱却很相近。分析表明这些变化都来源于分子在银纳米颗粒表面吸附行为的变化,基底的表面特性和分子的表面构型对分子在基底表面的吸附行为会产生很大的影响。     

介质pH对银基上4-甲基-4H-3-巯基-1,2,4-三氮唑成膜结构和缓蚀性能影响的SERS和电化学研究

在不同pH介质中,缓蚀试剂4-甲基-4H-3-巯基-1,2,4-三氮唑(4-MTTL)都能在银基底上形成自组装膜。SERS光谱表明:当pH=3时,4-MTTL分子是以硫醇式,通过两个氮原子为吸附位点,以较平躺方式在银表面构筑自组装膜;当介质为pH=7和pH=11时,4-MTTL以硫醇式,通过氮和硫原子为吸附位点倾斜或垂直方式作用于银表面。由于后者的吸附方式比前者更为垂直于表面,所以形成的膜中分子排列更为致密。电化学极化实验也表明,在pH=3的条件下,形成的4-MTTL单层有更正的腐蚀电位;在pH=11时,构筑的膜缓蚀能力强于pH=7的。并由电化学交流阻抗数据解析了相应的缓蚀机理。     

巯基苯并咪唑在银电极表面的自组装吸附特性及表面增强拉曼光谱

采用循环伏安法处理Ag电极,得到活化的具有表面增强拉曼光谱(SERS)效应的粗糙Ag表面,进一步采用激光拉曼光谱探讨了2-巯基苯并咪唑(MBI)在其表面的自组装分子层的吸附特性。实验表明,在活性Ag表面的MBI自组装分子层能够产生理想的SERS效应,其强度随探针分子MBI浓度的增加先提高后减弱,达到一定浓度时因受其空间位阻等因素的影响,增强效应减弱。MBI在1×10^-6 mol·L^-1 浓度时增强效果最大。拉曼增强效应随着体系酸度的变化有着明显不同,在强酸性条件下的增强效应明显优于中性和碱性条件。MBI分子存在两种不同的异构体和在不同酸度下存在3种不同的存在形态,并形成动态平衡。pH <2时,MBI分子主要以硫酮式MBI⁺存在,并以巯基上的S:与活性Ag以配位方式吸附成键,其整个大π键平面垂直地吸附于Ag表面,产生相对较大的SERS信号。pH >2时,由于硫酮式和硫醇式与活性Ag的键合方式和能力不同,硫醇式上的S与Ag以S-Ag共价方式同时双键侧上的N以配位方式协同参与吸附成键,比硫酮式MBI⁺的单纯配位吸附要强,因而形成了竞争吸附,表现为SERS在pH=2~3.7之间的急剧下降。MBI硫醇式由于以S-Ag、N-Ag键的协同吸附,形成了倾斜侧卧式垂直吸附,而使拉曼增强效应相对减弱。     

Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafers

Silicon-on-insulator (SOI) wafers are commonly used to design microelectronics, energy conversion, and sensing devices. Thin solid films on the surfaces of SOI wafers have been a subject of numerous studies. However, SOI wafers modified by self-assembled monolayers (SAMs) that can also be used as functional device platforms have been investigated to a much lesser extent. In the present work, tert-butoxycarbonyl (t-boc, (CH₃)₃-C-O-C(O)-)-protected 1-amino-10-undecene monolayers were covalently attached to a H-terminated SOI (1 0 0) surface. The modified wafers were characterized by X-ray photoelectron spectroscopy to confirm the stability of the SAM/Si interface and the integrity of the secondary amine in the SAM. The transmission electron microscopy investigation suggested that this t-boc-protected 1-amino-10-undecene SAM produces atomically flat interface with the 2 μm single crystalline silicon of the SOI wafer, that the SiO_x and both available Si/SiO_x interfaces are preserved, and that the organic monolayers are stable, with apparent thickness of 1.7 nm, which is consistent with the result of the density functional theory modeling of the molecular features within a SAM.     

Hierarchical evolution of arrayed nanowires, nanorods, and nanosheets in ZnO

Various intriguing arrayed nanostructures of ZnO, i.e., arrayed nanowires, arrayed nanorods, arrayed nanosheets, were fabricated in series by controlling the processing temperature and oxygen contents systematically based on a simple thermal evaporation process. These structures are monolithically single crystalline and the examples of spontaneous organization of vapor molecular species into nanoscale structures and their microscale assemblies or superlattices in one step. These kinds of arrayed structures might be useful in arrayed nanoscale optoelectronic and electrochemical applications. PACS 81.10; 81.05.Y; 85.60; 52.75.R; 81.15.G     

A contact angle and ToF-SIMS study of SAM-thiol interactions on polycrystalline gold

A process of chemical differentiation of neighboring Au features on a substrate (for biosensing applications) involves a step, where after electrochemical removal of a self-assembled monolayer (SAM) from one feature, another SAM is deposited onto it by incubation with a different thiol. During this incubation step, other undesorbed features are also exposed to this thiol which may lead to a partial SAM-thiol exhange, the extent of which is a function of time. Here, such surface reactions were followed on polystalline Au in both directions using contact angle measurements and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The thiols involved were dodecanethiol (DDT) which forms SAM promoting adsorption of proteins and 11-mercaptoundecyl)tri(ethylene glycol) (TPEG) whose SAM prevents such adsorption. The surface reactions in both directions cannot be described by a simple pseudo-first-order kinetics. It was found that while the DDT SAM interaction with a TPEG solution leads eventually to a total replacement, the reverse process, TPEG SAM interaction with DDT, leads to no noticeable exchange over the first 3 h and then asymptotically approaches ∼50% replacement.     

基于芯片实验室技术的表面增强光谱学在分析科学中的应用

集成具有一序列微流控操作单元的芯片实验室技术,在微流控通道内铺陈金属纳米粒子(尤其是金、银以及铜纳米粒子)作为衬底,泵入多通道微纳升分析物,用于联用表面增强光谱在痕量、实时、原位、过程反应等检测中具有重要的意义。这种联用检测技术集成了芯片实验室和表面光谱两种技术的优点：芯片实验室技术集成流程式分步操作,实现筛选取样,分段、实时反应检测,减小样品量,稳定测试环境等优势以及表面增强光谱的光谱响应快,灵敏性和选择性强、原位检测等优点。借助于Drude模型以及适当的边界条件,外电场引发金属颗粒价电子的局域等离子振荡,并推导了产生共振的局域表面等离子增强以及受激感应偶极子振荡产生表面拉曼增强的物理电磁增强机制。综述了芯片实验室表面局域等离子检测在生物、医药、食品安全等方面的应用,检测通道的增加促使检测效率有较大的提高,同时检测限能力获得较大的突破。综述了芯片实验室技术结合表面增强拉曼光谱公共安全、生物医学、电化学和生物传感器等领域的应用, 表面增强拉曼光谱的高度灵敏性以及指纹性应用于痕量检测。根据芯片实验室技术在研究开发和应用已经获得不断的进展,结合3D打印技术,精准控制多通道结构尺寸,更好地满足设计的需求。表面等离子增强光谱以及表面增强拉曼光谱等表面光谱检测技术在应用上日趋成熟,获得突破传统显微镜的光学极限的分辨能力。这种联用技术在实际定性或者半定量痕量分析检测应用中具有光明的前景。     

Molecular dynamics study of coupled layer thickness and strain rate effect on tensile behaviors of Ti/Ni multilayered nanowires

Novel properties and applications of multilayered nanowires(MNWs) urge researchers to understand their mechanical behaviors comprehensively.Using the molecular dynamic simulation,tensile behaviors of Ti/Ni MNWs are investigated under a series of layer thickness values(1.31,2.34,and 7.17 nm) and strain rates(1.0 × 10~8 s~(-1) ≤ε≤5.0 × 10~(10) s~(-1)).The results demonstrate that deformation mechanisms of isopachous Ti/Ni MNWs are determined by the layer thickness and strain rate.Four distinct strain rate regions in the tensile process can be discovered,which are small,intermediate,critical,and large strain rate regions.As the strain rate increases,the initial plastic behaviors transform from interface shear(the shortest sample) and grain reorientation(the longest sample) in small strain rate region to amorphization of crystalline structures(all samples) in large strain rate region.Microstructure evolutions reveal that the disparate tensile behaviors are ascribed to the atomic fractions of different structures in small strain rate region,and only related to collapse of crystalline atoms in high strain rate region.A layer thickness-strain rate-dependent mechanism diagram is given to illustrate the couple effect on the plastic deformation mechanisms of the isopachous nanowires.The results also indicate that the modulation ratio significantly affects the tensile properties of unequal Ti/Ni MNWs,but barely affect the plastic deformation mechanisms of the materials.The observations from this work will promote theoretical researches and practical applications of Ti/Ni MNWs.     

Molecular dynamics analysis of the substrate temperature effect on thermomechanical characteristics of vapor deposited nanofilms

Modern engineering applications are in need for technologies of nanostructures and nanofilms with controllable properties. The detection of these structures requires methods of atomic research, among which are molecular dynamics techniques, Monte-Carlo simulation, and ab initio calculation. The most efficient method to deal with systems of about several thousands of atoms is molecular dynamics simulation. We used this method to analyze the formation of nanolayers on a Cu substrate in vapor deposition of Cu atoms. It is shown that the film deposited on the substrate surface replicates the crystalline structure of the substrate. It is found that at low deposition temperatures, the deposited layer reveals a great quantity of vacancies and vacancy clusters (nanopores). It is demonstrated that increasing the substrate temperature in metal vapor deposition ensures a more perfect lattice in the nanocoating, and the cohesive energy of atoms in the nanolayer thus approximates experimental values. It is also found that the increase in substrate temperature in the process causes Young’s modulus and elastic limit to tend to the values of a perfect crystal.     

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.     

Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE

Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength bands by varying the thickness and composition of the constituent materials, and bulk InAsSb-based XBn barrier designs. These materials can provide desirable detector features such as wider wavelength range, suppression of tunneling currents, improved quantum efficiency, and higher operating temperatures. In order to bring these advantages to market, a reliable manufacturing process must be established on large diameter substrates. We report our latest work on the molecular beam epitaxy growth of Sb-detector epiwafers on 100 mm diameter GaSb substrates in a multi-wafer production format. The growth process has been established to address the challenges of these demanding structures, including the large numbers of alternating thin layers and mixed group-V elements. Various characterization techniques demonstrate excellent surface morphology, crystalline structure quality, and optical properties of the epiwafers. The measured wafer-to-wafer consistency and cross-wafer uniformity demonstrate the potential for volume manufacturing.     

Comparative Study of Tribological Properties of Polyphenylene Sulfide (PPS), Polyethersulfone (PES), and Polysulfone (PSU)

The tribological properties of polyphenylene sulfide (PPS), polyethersulfone (PES) and polysulfone (PSU), which have similar molecular structures, were investigated using an end-face contact tribometer and a reciprocating tribometer. The thermomechanical behavior of the polymers was analyzed using dynamic mechanical analysis (DMA). PPS exhibited a maximum friction coefficient with increasing load and sliding speed, while the friction coefficients of PES and PSU decreased only slightly. The wear rate of PPS was much lower than that of PES and PSU under high loads and speeds. It is suggested that the main factors influencing the friction and wear properties of the neat polymers are their condensed state and heat resistance. Amorphous PES and PSU showed liquid-like behavior and very low friction when the frictional surface was in the molten-flow state. The macromolecular crystals of crystallizable PPS give it some solid-like behavior and load-carrying capacity; hence PPS exhibited lower wear than PES and PSU.     

Investigation of shape memory characteristics and production of HfZrTiFeMnSi high entropy alloy by mechanical alloying method

High entropy alloy (HEA) with shape memory effect (SME) has been the subject of great interest for the past few decades. However, with the increased demands for new materials for high thermal applications, the research activities on the multi elemental high entropy shape memory alloys (HESMA) have been increased by many folds recently. The nano crystalline HEA powder with shape memory effect developed in this study, HfZrTiFeMnSi, was produced by mechanical alloying (MA) for the first time. In this method equiatomic ratio of Hf, Zr, Ti, Fe, Mn, and Si were mixed together and milled by MA process for 100 h. The powder formed was of amorphous in nature. Elemental mapping of the powder from SEM-EDS revealed homogeneity of the alloying elements confirming successful fabrication of HfZrTiFeMnSi HEA powder. The DSC studies from ambient to 500 °C of the annealed alloy powders showed reversible austenitic to martensitic (A↔M) transformations. The A↔M transformation hysteresis seemed to vary with the milling time and annealing temperature. The enthalpy values, ΔH, for the transformation were calculated from the DSC plots using tangent method for peak area calculation. Regardless of the annealing temperature, the thermal analysis revealed that the ΔH, equilibrium temperature (T₀), and crystallization temperature values decreased with the increasing milling time.