Strain rate and cold rolling dependence of tensile strength and ductility in high nitrogen nickel-free austenitic stainless steel

The tensile strength and ductility of a high nitrogen nickel-free austenitic stainless steel with solution and cold rolling treatment were investigated by performing tensile tests at different strain rates and at room temperature. The tensile tests demonstrated that this steel exhibits a significant strain rate and cold rolling dependence of the tensile strength and ductility.With the increase of the strain rate from 10~(-4)s~(-1)to 1 s~(-1), the yield strength and ultimate tensile strength increase and the uniform elongation and total elongation decrease. The analysis of the double logarithmic stress–strain curves showed that this steel exhibits a two-stage strain hardening behavior, which can be well examined and analyzed by using the Ludwigson equation. The strain hardening exponents at low and high strain regions(n_2and n_1) and the transition strain(εL) decrease with increasing strain rate and the increase of cold rolling RA. Based on the analysis results of the stress–strain curves, the transmission electron microscopy characterization of the microstructure and the scanning electron microscopy observation of the deformation surfaces, the significant strain rate and cold rolling dependence of the strength and ductility of this steel were discussed and connected with the variation in the work hardening and dislocation activity with strain rate and cold rolling.     

NiTi形状记忆合金形变机制的应变率相关性研究

利用高速拉伸实验机在宽的应变率范围内(0.001–1200 s^-1), 研究了NiTi形状记忆合金的宏观力学性能随应变率的变化规律, 并借助透射电子显微镜深入研究了微观结构在不同应变率下的演变机制. 研究发现: NiTi合金马氏体(B19’相)孪晶的解孪晶应力随应变率的升高而近乎线性增大, 表明NiTi 合金解孪晶应力具有正向应变率相关性. 在拉伸应变率为10 s^-1的样品微观结构中发现了大量的解孪晶区域, 而当应变率进一步增大到100 s^-1和 1200 s^-1时, 在样品中没有发现解孪晶区域的存在, 样品微观组织以孪晶形式存在. 该结果表明, NiTi合金的马氏体解孪晶速率应在 10–100 s^-1范围内. 在高应变率下(≥qslant10 s^-1)均发现了热引发奥氏体相(B2)的存在, 表明随应变率的增加, 拉伸过程由等温过程逐渐变为绝热过程. 此外, 在1200 s^-1 的样品差示扫描热量曲线中还发现了一个小肩峰, 表明相变过程由一步相变变为两步相变. 关键词： NiTi形状记忆合金 高速拉伸 应变率相关性 透射电子显微镜     

高应变率压缩下纳米孔洞对金属铝塑性变形的影响研究

本文利用分子动力学模拟方法研究了含纳米孔洞金属铝在[110]晶向高应变率单轴压缩下弹塑性变形的微观过程. 对比单孔洞和完整单晶的模型, 讨论了多孔金属的应力应变关系及其位错发展规律. 研究结果表明, 对于多孔模型的位错积累过程, 位错密度随应变的增加可大致分为两个线性阶段. 由同一个孔洞生成的位错在相互靠近过程中, 其滑移速度越来越小; 随着位错继续滑移, 源自不同孔洞的位错之间开始交叉相互作用导致应变硬化. 达到流变峰应力之后又由于位错密度增殖速率升高发生软化. 当应变增加到11.8%时, 所有孔洞几乎完全坍缩, 并观察到在此过程中有棱位错生成.     

β-SiC单晶块体拉伸变形行为分子动力学研究

用分子动力学方法研究面心立方SiC(β-SiC)、C元素置换掺杂β-SiC单晶块体体系[001]向拉伸变形行为,对体系的拉伸断裂微观机理和5×10⁸/s,1×10⁹/s,1×10¹⁰/s三种应变速率下的力学行为进行分析.发现当拉伸应变量达到某个临界值后,Si-C sp³,C-C sp³键会分别向Si-C sp²和C-C sp²弱键转化.形成一定量sp²键后,β-SiC内部出现孔洞并发生断裂.由于C-C sp³键比Si-C sp³键更易向sp²弱键转化,导致C元素掺杂会降低SiC的强度、弹性模量和拉伸断裂应变.此外还发现此三种应变速率不影响β-SiC的杨氏模量,但影响其拉伸强度.     

淫羊藿苷与牛血清白蛋白相互作用

在模拟人体生理条件下,采用荧光光谱法及紫外-可见吸收光谱法研究了淫羊藿苷与牛血清白蛋白的相互作用。结果表明,淫羊藿苷对牛血清白蛋白有较强的猝灭作用,猝灭方式为静态猝灭。当温度为25℃和36℃时,淫羊藿苷对牛血清白蛋白的猝灭速率常数分别为4.37×10¹²mol·L^-1·s^-1和3.90×10¹²mol·L^-1·s^-1,结合常数K_A为3.55×10⁴L·mol^-1和3.97×10⁴L·mol^-1,结合位点数为1.12和1.04;根据Foerster非辐射能量转移理论,计算出淫羊藿苷与牛血清白蛋白之间的结合距离为2.08nm,热力学分析表明,淫羊藿苷与牛血清白蛋白之间以疏水作用力为主。     

超薄EuF3电极修饰层对有机场效应晶体管性能的提升

采用EuF₃薄层修饰低功函数金属Ag源、漏电极,制备了CuPc有机场效应晶体管,研究了不同厚度EuF₃对器件性能的影响。结果表明,EuF₃的厚度由0 nm增至0.6 nm时,接触电阻由23.65×10⁵ Ω·cm减 至3.86×10⁵ Ω·cm,使得器件载流子迁移率由1.5×10^-3 cm²·V^-1·s^-1提高到4.65×10^-3 cm²·V^-1·s^-1。 UPS测试结果表明,薄层EuF₃在Ag与有机半导体间形成了界面偶极势垒,使源漏电极表面功函数增大,空穴注入势垒降低,Ag电极与有机半导体层界面的接触电阻减小,进而提升了空穴的注入效率。     

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures

The structure of In P-based In_xGa_(1-x) As/In0.52Al0.48 As pseudomorphic high electron mobility transistor(PHEMT)was optimized in detail.Effects of growth temperature,growth interruption time,Si δ-doping condition,channel thickness and In content,and inserted Al As monolayer(ML) on the two-dimensional electron gas(2DEG) performance were investigated carefully.It was found that the use of the inserted Al As monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement.With optimization of the growth parameters,the structures composed of a 10 nm thick In0.75Ga0.25 As channel layer and a 3 nm thick Al As/In0.52Al0.48 As superlattices spacer layer exhibited electron mobilities as high as 12500 cm~2·V-1·s~(-1)(300 K) and 53500 cm~2·V~(-1_·s~(-1)(77 K) and the corresponding sheet carrier concentrations(Ns) of 2.8×10~(12)cm~(-2)and 2.9×1012cm~(-2),respectively.To the best of the authors' knowledge,this is the highest reported room temperature mobility for In P-based HEMTs with a spacer of 3 nm to date.     

Eu掺杂Si纳米线的光致发光特性

利用Si(111)衬底, 以Au-Al为金属催化剂, 基于固-液-固生长机理, 在温度为1100℃, N₂气流量为1.5 L/min、生长时间为30–90 min等工艺条件下, 制备了直径约为100 nm、长度为数微米的高密度、均匀分布、大面积的Si纳米线(～10¹⁰ cm^-2). 对Si纳米线进行了Eu掺杂, 实验研究了不同长度的Si纳米线以及不同掺杂温度、掺杂时间等工艺参数对Eu离子红光发射的影响, 利用扫描电子显微镜和X射线衍射仪对Si纳米线表面形貌和Eu掺杂后Si纳米线的结晶取向进行了测量和表征; 室温下利用Hitachi F-4600型荧光分光光度计对样品的激发光谱和发射光谱进行了测试和分析. 结果表明: 在Si纳米线生长时间为30 min、掺杂温度为1000℃、 最佳激发波长为395 nm时, 样品最强荧光波长为619 nm (⁵D₀→⁷F₂); 同时, 还出现了576 nm (⁵D₀→⁷F₀), 596 nm (⁵D₀→⁷F₁), 658 nm (⁵D₀→⁷F₃)和708 nm (⁵D₀→⁷F₄)四条谱带.     

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为10×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近33×107cm·s^-1,6H Sic接近30×107cm·s^-1.     

激光驱动气库靶对铝的准等熵压缩实验研究

利用激光驱动气库材料形成的等离子体射流对材料进行斜波加载, 可以获得高应变率的准等熵压缩. 在神光III 原型高功率激光装置上开展了激光驱动铝材料的准等熵压缩实验, 成像型速度干涉仪VISAR记录到样品自由面连续、光滑的速度历史, 采用反积分法得到60 GPa以上的峰值压强, 加载上升沿约10 ns,应变率可达10⁸ s ^-1, 并且观察到了压缩波在样品后表面的反射效应.     

表面绝缘混合平面丝阵Z箍缩激光阴影图像诊断

基于脉冲半高全宽约为9 ns、波长为532 nm的Nd:YAG激光器,采用条纹相机和商用数码相机两种记录设备,建立了时间分辨和时间积分两种模式的激光阴影图像诊断系统,在"强光一号"装置上对表面绝缘混合平面丝阵Z箍缩等离子体开展了实验研究.实验结果表明:在融蚀过程中表面绝缘金属丝冕等离子体发展较普通金属丝慢,在t=44ns到t=56ns之间,其平均膨胀速度分别为1.1×104m·s-1和1.7×104m·s-1;在等离子体滞止前10 ns的快速聚爆过程中,表面绝缘金属丝和普通金属丝两侧的平均聚爆速度分别为5.5×105m·s-1和9.3×105m·s-1,表面绝缘一侧等离子体滞止时间小于普通金属丝一侧,分别为5.9 ns和9.5 ns;等离子体碰撞分界线偏向于表面绝缘一侧,滞止时形成的磁流体不稳定性结构类似.     

Strain-rate-induced bcc-to-hcp phase transformation of Fe nanowires

Using molecular dynamics simulation method, the plastic deformation mechanism of Fe nanowires is studied by applying uniaxial tension along the [110] direction. The simulation result shows that the bcc-to-hcp martensitic phase transformation mechanism controls the plastic deformation of the nanowires at high strain rate or low temperature; however,the plastic deformation mechanism will transform into a dislocation nucleation mechanism at low strain rate and higher temperature. Furthermore, the underlying cause of why the bcc-to-hcp martensitic phase transition mechanism is related to high strain rate and low temperature is also carefully studied. Based on the present study, a strain rate-temperature plastic deformation map for Fe nanowires has been proposed.     

Carrier relaxation in InGaAs

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range λ = 1.45−2.1 μm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 10¹⁸ cm^-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10^-28 cm⁶ s^-1 is determined.     

Measurement of iron characteristics under ramp compression

Laser-driven ramp compression was used to investigate iron characteristics along the isentropic path. The iterative Lagrangian analysis method was employed to analyze the free surface velocity profiles in iron stepped target measured with two VISARs. The onset stress for the α to ε phase transformation was determined from the sudden change in the sound velocity and was found over-pressurized compared to the static and shock results. The derived stress(26 GPa) and strain rate(up to 10~8 s~(-1)) are consistent with our previous experimental results. The stress-density relations were compared with those from previous ramp experiments and good agreements were found, which experimentally confirms the simulations,showing that iterative Lagrangian analysis can be applied to the ramp-compression data with weak shock.     

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.     

热-电应力下Cu/Ni/SnAg_(1.8)/Cu倒装铜柱凸点界面行为及失效机理

微互连铜柱凸点因其密度高、导电性好、噪声小被广泛应用于存储芯片、高性能计算芯片等封装领域,研究铜柱凸点界面行为对明确其失效机理和组织演变规律、提升倒装封装可靠性具有重要意义.采用热电应力实验、在线电学监测、红外热像测试和微观组织分析等方法,研究Cu/Ni/SnAg_1.8/Cu微互连倒装铜凸点在温度100—150℃、电流密度2×10~4—3×10~4 A/cm~2热电应力下的互连界面行为、寿命分布、失效机理及其影响因素.铜柱凸点在热电应力下的界面行为可分为Cu_6Sn_5生长和Sn焊料消耗、Cu_6Sn_5转化成Cu_3Sn、空洞形成及裂纹扩展3个阶段,Cu_6Sn_5转化为Cu_3Sn的速率与电流密度正相关.热电应力下,铜凸点互连存在Cu焊盘消耗、焊料完全合金化成Cu_3Sn、阴极镍镀层侵蚀和层状空洞4种失效模式.基板侧Cu焊盘和铜柱侧Ni镀层的溶解消耗具有极性效应,当Cu焊盘位于阴极时,电迁移方向与热迁移方向相同,加速Cu焊盘的溶解以及Cu_3Sn生长,当Ni层为阴极时,电迁移促进Ni层的消耗,在150℃,2.5×10~4 A/cm~2下经历2.5h后,Ni阻挡层出现溃口,导致Ni层一侧的铜柱基材迅速转化成(Cu_x,Ni_y)_6Sn_5和Cu_3Sn合金.铜柱凸点互连寿命较好地服从2参数威布尔分布,形状参数为7.78,为典型的累积耗损失效特征.研究结果表明:相比单一高温应力,热电综合应力显著加速并改变了铜柱互连界面金属间化合物的生长行为和失效机制.     

Rotational Property of~(249)Cm in Particle-Triaxial-Rotor Model

We study the rotational energy spectrum and deformation feature of very heavy nucleus 249Cm in the particle-triaxial-rotor model with variable moment of inertia.Such a nucleus is the unique one involving both multiband structure and high spin states and locating very near the superheavy region.By calculating the energy spectrum,we determine the configurations and quadrupole and triaxial deformation parameters β and γ of the nucleus.The calculated results indicate that the high spin band of 249Cm is built upon the ν[620] 12+configuration with deformation parameters β = 0.296 and γ = 7.5 and the bands based on the ν[622] 32+,ν[613] 72+,ν[750] 12 configuration respectively are also the ones with quite large axial deformation but small triaxial deformation.     

温度和应变速率耦合作用下纳米晶Ni压缩行为研究

本文利用低温力学测试系统研究了电化学沉积纳米晶Ni在不同温度和宽应变速率条件下的压缩行为. 借助应变速率敏感指数、激活体积、扫描电子显微镜及高分辨透射电子显微镜方法, 对纳米晶Ni的压缩塑性变形机理进行了表征. 研究表明, 在较低温度条件下, 纳米晶Ni的塑性变形主要是由晶界位错协调变形主导, 晶界本征位错引出后无阻碍的在晶粒内无位错区运动, 直至在相对晶界发生类似切割林位错行为. 并且, 在协调塑性变形时引出位错的残留位错能够增加应变相容性和减小应力集中; 在室温条件下, 纳米晶Ni的塑性变形机理主要是晶界-位错协调变形与晶粒滑移/旋转共同主导. 利用晶界位错协调变形机理和残留位错运动与温度及缺陷的相关性揭示了纳米晶Ni在不同温度、不同应变速率条件下力学压缩性能差异的内在原因.     

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.     

Magnetic domain walls and pulsed magnetization reversal in amorphous Fe40Ni40P14B6 ribbon under tension

Magnetization reversal has been studied in long ribbons of Metglas 2826 under tension. At low fields propagating head-on domain boundaries of the Sixtus-Tonks type were observed. Measurements of their lengths, of order 20 to 50 cm, together with a simple magnetostatic model of their structure, yield values of the specific domain wall surface energy γ = 3.8 × 10^-8 σ^1/2 J m^-2 for tensile stress σ Pa. A value A= 5.6 × 10^-12 J m^-1 for the exchange constant follows. The low-fi eld mobility of these domain walls shows no evidence of relaxation damping at speeds below 1.2 m s^-1. The threshold field at which reverse domains nucleate is found to be proportional to the square root of the tension. At high fields (>200 A m^-1) the rough surface of the ribbon (the surface that came in contact with the quenching wheel during manufacture) reverses first and saturates at about the same time as the smooth surface begins to reverse and the volume reversal rate peaks. A simple quantitative model of the high field reversal process satisfactorily predicts both the surface and volume reversal rates. It yields a consistent value β_R = 14 kg m^-2s^-1 for the relaxation damping constant at wall speeds in excess of 13 m s^-1 and estimates the number of reversal nuclei in accord with Yagi and Anayama.