Highly conductive and transparent carbon nanotube-based electrodes for ultrathin and stretchable organic solar cells

In this work, we have presented a freestanding and flexible CNT-based film with sheet resistance of 60 ?/ and transmittance of 82% treated by nitric acid and chloroauric acid in sequence. Based on modified CNT film as a transparent electrode, we have demonstrated an ultrathin, flexible organic solar cell(OSC) fabricated on 2.5-μm PET substrate. The efficiency of OSC, combined with a composite film of poly(3-hexylthiophene)(P3HT) and phenyl-C61 butyric acid methyl ester(PCBM) as an active layer and with a thin layer of methanol soluble biuret inserted between the photoactive layer and the cathode, can be up to 2.74% which is approximate to that of the reference solar cell fabricated with ITO-coated glass(2.93%). Incorporating the as-fabricated ITO-free OSC with pre-stretched elastomer, 50% compressive deformation can apply to the solar cells. The results show that the as-prepared CNT-based hybrid film with outstanding electrical and optical properties could serve as a promising transparent electrode for low cost, flexible and stretchable OSCs, which will broaden the applications of OSC and generate more solar power than it now does.     

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al2O3(0001) Surface by Using Wurtzite MgO Buffer

The controlled growth of Zn-polar ZnO fihns on Al-terminated α-Al203 （0001） substrates is investigated by the radio-frequency plasma-assisted molecular beam epitaxy method. Prior to the growth, α-Al2O3 （0001） surface is modified by an ultrathin MgO layer, which serves as a uniform template for epitaxy of Zn-polar ZnO films. The microstructures of ZnO/MgO/Al2O3 interface are investigated by in-situ reflection high-energy electron diffraction observations and ex-situ high-resolution transmission electron microscopy characterization. It is found that under Mg-rich condition, the achievement of the wurtzite MgO ultrathin layer plays a key role in the subsequent growth of Zn-polar ZnO. An interracial atomic model is proposed to explain the mechanism of polarity selection of both MgO and ZnO films.     

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.     

Laminated Polymer Solar Cells with PEDOT：PSS Film as Anode

A prefabricated conductive polymer film of polymer poly（3,4-ethylenedioxy-thiophene）：poly （styrene-sulfonate） （PEDOT：PSS） is developed and is used as the anode in an inverted polymer solar cell （PSC） through a lamination process. The geometry structure of the PSC is indium tin oxide/interface layer/P3HT：PCBM/PEDOT：PSS. The PEDOT：PSS electrode is 5 μm and the sheet resistance is 10Ω/sq. The device fabrication process is vacuum-free and extremely simple. Lithium carbonate （Li2CO3） and cesium carbonate （Cs2C03） are used as the cathode interface layers, respectively, and the result shows that Li2CO3 can enhance the open-circuit voltage （Voc） and fill factor distinctly, and the power conversion efficiency （PCE） can reach 2.1%.     

Study on the delamination of tungsten thin films on Sb2Te3

To investigate the reliability of electrode materials for chalcogenide random access memory （C-RAM） applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2Te3 bilayer system surface are observed by field emission scanning electronic microscope （FESEM） and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.     

Improved performance of P3HT：PCBM solar cells by both anode modification and short-wavelength energy utilization using Tb（aca）3phen

The performance of P3HT:PCBM solar cells was improved by anode modification using spin-coated Tb(aca)3phen ultrathin films. The modification of the Tb(aca)3phen ultrathin film between the indium tin oxide(ITO) anode and the PEDOT:PSS layer resulted in a maximum power conversion efficiency(PCE) of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density(Jsc). The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb(aca)3phen with its strong down-conversion luminescence properties is suitable for the P3HT:PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphology of P3HT:PCBM films were improved with the Tb(aca)3phen ultrathin film. The ultraviolent–visible absorption spectra,atomic force microscope(AFM), and X-ray diffraction(XRD) of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb(aca)3phen in P3HT:PCBM solar cells led to about a 12% PCE increase.     

Efficient Phosphorescent Organic Light Emitting Diodes Using FITCNQ as the Indium-Tin-Oxide Modification Layer

A phosphorescent organic light emitting diode by using tetrafluorotetracyanoquinodimethane （F4 TCNQ） as the indium-tin-oxide modification layer and 4,4＇-bis（earbazol-9-yl）biphenyl （CBP） as the hole transporting layer is reported. CBP doped with a green phosphorescent dopant, tris（2-（p-tolyl）pyridine） iridium（III） （Ir（mppy）3） is used as the emission layer in this device, and the maximum current efficiency of 31.3 cd/A is achieved. Further- more, low efficiency roll-off of 10.4% is observed with device luminance increasing from 100 cd/m2 （29. 7 cd/A） to lO000 cd/m2 （26.5 cd/A）. It is demonstrated that a charge-generation area is formed at F4 TCNQ/CBP interface, which will benefit hole injection into the hole transporting layer. Moreover, use of the CBP hole transporting layer will benefit the low efficiency roll-off by broadening triplet exciton formation, as well as by avoiding accumulation of unbalanced carrier at the hole transporting layer/emission layer interface.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.     

Secure and noise-free holographic encryption with a quick-response code简

An optical fiber sensor for ultrathin layer sensing based o51 short-range surface plasmon polariton （SRSPP） is proposed, and the sensing characteristics are theoretically analyzed. Simulation results indicate that even for a detecting layer much thinner than the vacuum wavelength, a resolution as high as 3.7×10-6 RIU can be obtained. Moreover, an average ttfickness-detection sensitivity of 6.2 dB/nm is obtained, which enables the sensor to detect the thickness variation of the ultrathin layer up to tens of nanometers. The sensitive region of thickness could be adjusted by tuning the structure parameters.     

High resolution X-ray diffraction investigation of epitaxially grown SrTiO3 thin films by laser-MBE

SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.     

Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.     

Microstructural stability of NiO-containing spin valves annealed at room temperatur

Microstructure of NiO-containing Co/Cu/Co spin valves （CCC-SV） annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top （TSV） and under the bottom （BSV） of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.     

A theoretical study of the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110）

A multiple-scattering chtster method is employed to calculate the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110） and its monolayer. Two peaks and one weak resonance appear in both cases. The self- consistent field DV-Xa calculations of the peaks and resonance show that the physical origin of the pre-edge peak x is different from those of the main peak 1 and the other weak resonance al. This setup is intrinsic to the N20 monolayer, owing to the interaction between the neighbouring molecular chains in the monolayer and partly to the adsorbed atomic oxygen, according to both the theoretical and experimental data.     

Exchange coupling and helical spin order in the triangular lattice antiferromagnet CuCrO2 using first principles

The magnetic and electronic properties of the geometrically frustrated triangular antiferromagnet CuCrO2 are investigated by first principles through density functional theory calculations within the generalized gradient approxi- mations （GGA）＋U scheme. The spin exchange interactions up to the third nearest neighbours in the ab plane as well as the coupling between adjacent layers are calculated to examine the magnetism and spin frustration. It is found that CuCrO2 has a natural two-dimensional characteristic of the magnetic interaction. Using Monte Carlo simulation, we obtain the Neel temperature to be 29.9 K, which accords well with the experimental value of 24 K. Based on non- collinear magnetic structure calculations, we verify that the incommensurate spiral-spin structure with （110） spiral plane is believable for the magnetic ground state, which is consistent with the experimental observations. Due to intra-layer geometric spin frustration, parallel helical-spin chains arise along the a, b, or a＋ b directions, each with a screw-rotation angle of about I20°. Our calculations of the density of states show that the spin frustration plays an important role in the change of d-p hybridization, while the spin-orbit coupling has a very limited influence on the electronic structure.     

Spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling

Using the perturbation method,we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling.The heat generated by the spin current is calculated.With the increase of the width of the quantum wire,the spin current and the heat generated both exhibit period oscillations with equal amplitudes.When the quantum-channel number is doubled,the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2.For the spin current j s,xy,the amplitude increases with the decrease of the quantum channel;while the amplitude of the spin current j s,yx remains the same.Therefore we conclude that the effect of the quantum-channel number on the spin current j s,xy is greater than that on the spin current j s,yx.The strength of the Rashba spin-orbit coupling is tunable by the gate voltage,and the gate voltage can be varied experimentally,which implies a new method of detecting the spin current.In addition,we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels.All these characteristics of the spin current will be very important for detecting and controlling the spin current,and especially for designing new spintronic devices in the future.     

基于X射线掠射法的纳米薄膜厚度计量与量值溯源研究

为了实现纳米薄膜厚度的高精度计量,研制了可供台阶仪、扫描探针显微镜等接触测量的纳米薄膜样片,研究了X射线掠射法测量该纳米薄膜样片厚度的基本原理和计算方法,导出了基于Kiessig厚度干涉条纹计算膜层厚度的线性拟合公式,并提出了一种可溯源至单晶硅原子晶格间距和角度计量标准的纳米膜厚量值溯源方法,同时给出了相应的不确定度评定方法.实验证明:该纳米薄膜厚度H测量相对扩展不确定度达到U=0.3 nm+1.5%H,包含因子k=2.从而建立了一套纳米薄膜厚度计量方法和溯源体系.     

Translational order in liquid-expanded lipid monolayers functionalized with nucleosides

The monolayer behavior of a lipid containing two unsaturated alkyl chains and a nucleoside derivative as polar headgroup has been investigated by the Langmuir technique. From the surface pressure vs. molecular area isotherm, the monolayer appears as a pure liquid-expanded phase and should be then considered as a two-dimensional liquid. However, grazing incidence X-ray diffraction experiments evidence a translational order that does not exist when the lipid headgroup is a choline moiety. Since unsaturated chains are expected to induce a fluid state of the monolayer at the temperature considered, this order is likely to originate from the natural tendency nucleosides have to establish among themselves -stacking interactions between the bases. The collected X-ray data are consistent with the geometrical requirements for bases stacking. Received: 3 August 1998 / Revised: 16 September 1998 / Accepted: 21 September 1998     

High pressure X-ray diffraction study of CaMnO3 perovskite

Using a diamond anvil cell device and synchrotron radiation,the in-situ high-pressure structure of CaMnO3 has been investigated.In the pressure up to 36.5 GPa,no pressure-induced phase transition is observed.The pressure dependence on the lattice parameters of CaMnO3 is reported,and the relationship of the axial compression coefficients is βa 〉 βc 〉 βb.The isothermal bulk modulus K298=224（25） GPa is also obtained by fitting the pressure-volume data using the Murnaghan equation of state.     

Effects of N/Z on Spin Distribution of Evaporation Residue Cross Section as a Probe of Nuclear Dissipation

The spin distribution of the evaporation residue cross section of nuclei ^194pb, ^200Pb, ^206Pb, and ^200 Os are calculated via a Langevin equation coupled with a statistical decay model. It is shown that with increasing the neutronto-proton ratio （N/Z） of the system, the sensitivity of the significantly. Moreover, for ^200Os this spin distribution is no spin distribution to the nuclear dissipation is decreased longer sensitive to the nuclear dissipation. These results suggest that to obtain a more accurate pre-saddle viscosity coefficient through the measurement of the evaporation residue spin distribution, it is best to yield those compound systems with low N/Z.