| Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition |
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| 作者姓名： | 卢红亮 李彦波 徐敏 丁士进 孙亮 张卫 汪礼康 |
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| 作者单位： | [1]State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 [2]College of Electronic and Information Engineering, Hebei University, Baoding 071002 |
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| 基金项目： | Supported by the Science and Technology Committee of Shanghai under Grant No 04JC14013, the Programme for New Century Excellent Talents in University （NCET 04-0366）, and the Shanghai Pujiang Programme （05PJ14017）. |
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| 摘 要： | Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.
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| 关 键 词： | Al2O3薄膜 GaAs衬底 原子层 沉积作用 |
| 收稿时间： | 2006-03-07 |
| 修稿时间： | 2006-03-07 |
Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition |
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| LU Hong-Liang, LI Yan-Bo, DING Shi-Jin, SUN Liang, ZHANG Wei, WANG Li-Kang.Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition[J].Chinese Physics Letters,2006,23(7):1929-1931. |
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| Authors: | LU Hong-Liang LI Yan-Bo DING Shi-Jin SUN Liang ZHANG Wei WANG Li-Kang |
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