超分辨相变光盘的膜层计算与分析

利用多层膜反射率的矩阵法计算了GeSbTe超分辨相变光盘的光学参数与各膜层厚度之间的关系，最后得到了较为理想的膜层厚度匹配。     

一种新的超分辨记录点的读出技术

提出一种新的超分辨记录点的读出技术—超分辨反射膜技术，详细分析了其原理。用该技术，以Sb为超分辨反射膜，SiN为介电层，在激光波长为632．8nm和光学头的数值也径为0．40的读出光学系统中实现了直径为380nm的超分辨记录点的读出。同时研究了Sb薄膜厚度对读出信噪比的影响规律，发现最佳的Sb薄膜厚度为28～30nm，所得的信噪比为38～40dB。     

50~110 nm波段高反射率多层膜的设计与制备

阐述了50~110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成，每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比，这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜，并以此为初始条件通过Levenberg-Marquart优化方法完成了50~110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计，其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试，测试结果表明制作出的多层膜结构与设计结构基本相符.     

溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

多层介质光学膜系的计算机模拟误差分析

用计算机数值计算方法模拟多层介质光学膜系的实际镀膜工艺过程，分析膜厚误差对λ0／4高反射膜系透射率和反射率的影响，讨论在一定技射率要求条件下不同层数膜系的允许厚度误差。发现当膜层偏离λ膜厚时，光学厚度控制工艺能通过自动调整其后膜层的厚度有效地降低厚误差对膜系透射率和反射率的影响。对于镀制高反射率膜而言，膜厚允许误差仍可有较大的范围。     

50～11O nm波段高反射率多层膜的设计与制备

阐述了50～110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成,每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比,这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜,并以此为初始条件通过Levenberg-Marquart优化方法完成了50～110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计,其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试,测试结果表明制作出的多层膜结构与设计结构基本相符.     

软X射线Mo/Si多层膜反射率拟合分析

由于多层膜的表界面粗糙度和材料之间的相互扩散等因素，导致多层膜的实际反射率小于理论计算的反射率，因此，多层膜结构参量的确定对镀膜工艺参量的标定具有重要意义。由于描述单个非理想粗糙界面散射的Stearns法适用于软X射线短波段区域，采用它的数学模型来描述软X射线多层膜的粗糙度，利用最小二乘法曲线拟合法对同步辐射测得的Mo／Si多层膜的反射率曲线进行拟合，得到了非常好的拟合结果，从而确定了多层膜结构参量，同时分析了多层膜周期厚度，厚度比率，界面宽度以及仪器光谱分辨率对多层膜反射特性的影响，这些工作都为镀膜工艺改进提供了一定的理论依据。     

小波变换表征多层膜氧化层、界面层和膜厚漂移

用小波变换的方法分析了纳米多层膜的X射线掠入射反射率测试曲线.从小波变换的自相关函数峰位和峰强度信息中得到了常规曲线拟合方法难以表征的含有氧化层、界面层或厚度漂移的多层膜结构,利用其作为多层膜的初始结构再进行常规的曲线拟合,可实现多层膜结构精确表征的目的.研究成功地鉴别出钒单层膜的表面存在约3 nm厚的氧化层,分析得到Mo/Si多层膜的界面纯粗糙度约0.42 nm,表明在Ni/C多层膜中接近表面和基底的膜层存在大于5%的厚度漂移.     

帽层对极紫外多层膜反射特性影响分析

介绍了在极紫外波段，利用帽层材料来减少多层膜反射镜因外部环境干扰而造成的反射率降低，使多层膜光学元件能够长时间稳定工作.计算了在139nm波长处Mo/Si极紫外多层膜反射镜在表面镀制不同帽层材料时的理论最大反射率，利用单纯形调优法，对帽层和多层膜的周期厚度进行优化，同时把分层理论用于多层膜帽层优化,可使多层膜的反射率得到进一步提高.分析了在加入帽层前后多层膜外层电场强度的分布变化情况. 关键词： 多层膜 反射率 帽层 极紫外     

蓝光磁光盘的优化设计与分析

以TbFeCo作为蓝光磁光盘的记录介质，需要对传统磁光盘热、光学结构进行改进以提高载噪比。利用光学特征导纳矩阵法对改进结构的磁光盘膜层进行了优化设计，得到了较好的匹配结果；并通过热学计算得到了记录膜体温度分布，从理论上证明了新结构的优越性。     

Land/groove optical recording with GeTe/Sb2Te3 superlattice-like structure

A superlattice-like (SLL) structure was applied to phase-change optical recording. The recording layer consisting of alternating thin layers of two different phase-change materials, GeTe and Sb2Tes, were grown by magnetron sputtering on polycarbonate substrates. Land/groove optical recording was adopted to suppress crosstalk and obtain a large track density. Dynamic properties of the SLL disc were investigated with the shortest 1T pulse duration of 8 ns. Clear eye pattern was observed after 10000 direct overwrite cycles. Erasability above 20 dB was achieved at a constant linear velocity of 19 m/s. Carrier-noise ratio (CNR) kept above 46 dB when the recording frequency reaches 21 MHz. The SLL phase change optical disc demonstrates a better recording performance than the Ge1Sb2Te4 and Ge1Sb4Te7 discs in terms of CNR, erasability, and overwrite jitter.     

Optical properties and crystallization of AgInTeSbGe phase-change optical disk media

AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag₂Te and Ge₂Sb₂Te₅ crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge. The refractive index n and the extinction coefficient k of the AgInTeSbGe film in the amorphous and crystalline states were measured. The reflectivity contrast of the AgInTeSbGe phase-change optical disk was greater than %30 in almost the whole visible region. A minimum recording mark of about 220 nm in length was recorded using the AgInTeSbGe thin film as the recording medium. The reflectivity contrast of the minimum recording mark was about %25. PACS 42.70.Ln; 61.72.Ww; 78.66.Li; 81.30.Hd     

High Reflection Ge_(0.45)Te_(0.55) Recording Films

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Thermal and Optical Properties of Cyanine Dye for High Density Digital Versatile Disc-Recordable (DVD-R)

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｈｉｇｈ ｄｅｎｓｉｔｙｉｎｆｏｒｍａｔｉｏｎｓｔｏｒａｇｅｉｓａｎｉｍｐｏｒｔａｎｔｔｅｃｈｎｏｌｏｇｉｃａｌｏｂｊｅｃｔｉｖｅ.Ｔｏｉｎｃｒｅａｓｅｔｈｅｒｅｃｏｒｄｉｎｇｄｅｎｓｉｔｙｉｓｏｎｅｏｆｔｈｅｉｍｐｏｒｔａｎｔｓｕｂｊｅｃｔｓｉｎｔｈｅｃｕｒｒｅｎｔａｎｄｆｕｔｕｒｅｄｅｖｅｌｏｐｍｅｎｔｏｆｏｐｔｉｃａｌｓｔｏｒａｇｅｔｅｃｈｎｏｌｏｇｙ .Ｔｈｅｄｉｇｉｔａｌｖｅｒｓａｔｉｌｅｄｉｓｃ ｒｅｃｏｒｄａｂｌｅ (ＤＶＤ Ｒ)ｆｏｒｍａｔｈａｓｂｅｅｎｐｒ…     

13 nm窄带Si/Mo/C多层膜反射镜

基于多层膜准单色覆盖50~1500 eV能谱的多能点发射光谱测量系统可获得聚龙一号装置Z-pinch等离子体X射线源的能谱结构和总能量等信息。考虑装置的条件,在13 nm处的多层膜需要工作在掠入射角60。常规的Mo/Si多层膜尽管反射率最高,但其带宽较大,不能满足多层膜准单色的要求。因此提出将Mo和C共同作为多层膜的吸收层材料与Si组成Si/Mo/C多层膜,可使反射率降低较小而带宽明显减小。采用磁控溅射方法制备了Si/Mo/C多层膜,其掠入射X射线反射测量表面多层膜的结构清晰完整,同步辐射工作条件下反射率测量,得到Si/Mo/C多层膜在13 nm处和掠入射角60时的反射率为56.5%,带宽为0.49 nm（3.7 eV）。     

Film-thickness Error Analysis of Optical Disk Systems

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｒｅｃｅｎｔｌｙｏｐｔｉｃａｌｄｉｓｋｓａｂｌｅｔｏｓｔｏｒｅａｌａｒｇｅｑｕａｎｔｉｔｙｏｆｉｎｆｏｒｍａｔｉｏｎｈａｖｅｂｅｅｎｕｓｅｄａｓｃｏｍｐａｃｔｄｉｓｋ (ＣＤ ) ,ｄｉｇｉｔａｌｖｅｒｓａｔｉｌｅｄｉｓｋ(ＤＶＤ) ,ａｎｄｔｈｅｉｒｒｅｃｏｒｄａｂｌｅｏｒｒｅｗｒｉｔａｂｌｅｔｙｐｅｓ(ｓｕｃｈａｓＣＤ Ｒ ,ＣＤ ＲＷ ,ＤＶＤ Ｒ ,ａｎｄＤＶＤ ＲＡＭ ) [1 ] .Ａｎｏｐｔｉｃａｌｄｉｓｋｉｓａｋｉｎｄｏｆｍｕｌｔｉｌａｙｅｒｓｙｓｔｅｍｄｅｐｏｓｉｔｅｄｏｎａ…     

Film-thickness Error Analysis of Optical Disk Systems

It is difficult to exactly control the film thickness of optical disk multilayer in the actual coating process. The thickness error becomes a main factor affecting the optical characters of the film system. The thickness error′s sensitivity factor of dielectric optical multilayer is derived from the optical matrix in this paper. The effect of the thickness error on the reflectivity or reflectivity contrast of the optical disk multilayer is analyzed with a numerical calculation. The sensitivities to thickness error for different layers or in different film-thickness ranges are compared and discussed. A sketchy method defining allowable thickness error is given. Some experimental results verify the applicability of our theoretical analysis.     

低温退火的X射线W/Si多层膜应力和结构性能

W/Si多层膜反射镜在硬X射线天文望远镜中有重要应用. 为减小其应力对反射镜面形和望远镜分辨率的影响, 同时保证较高的反射率, 采用150, 175和200 ℃ 的低温退火工艺对采用磁控溅射镀制的W/Si周期多层膜进行后处理. 利用掠入射X射线反射测试和样品表面面形测试对退火前后W/Si多层膜的应力和结构进行表征. 结果表明, 在150 ℃ 退火3 h 后, 多层膜1级峰反射率和膜层结构几乎没有发生变化, 应力减少约27%; 在175 ℃ 退火3 h后, 多层膜膜层结构开始发生变化, 应力减少约50%; 在200 ℃退火3 h 后, 多层膜应力减小超过60%, 但1级布拉格峰反射率相对下降17%, 且膜层结构发生了较大变化. W, Si界面层的增大和相互扩散加剧是应力和反射率下降的主要原因.     

Optical Recording Performance of Azo Nickel Chelate Thin Film

The absorption,transmission and reflection spectra of spin-coated films of Ni(azo)2 (azo nickel chelate) were measured. Because of the intermolecular aggregation,the absorption peak of Ni(azo)2 thin film has a red-shift of about 40 nm with respect to that of it in methanol solution. The fabricated optical disk showed a reflectivity of 48% and its carrier-noise ratio (CNR) was greater than 45 dB when recording with 7.5 mW laser power at the wavelength of 780 nm.     

Investigation of phase changes in Ge1Sb4Te7 films by single ultra-fast laser pulses

The phase transformations induced in a Ge₁Sb₄Te₇ system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–SiO₂/80 nm Ge₁Sb₄Te₇/100 nm ZnS–SiO₂/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active Ge₁Sb₄Te₇ layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the Ge₁Sb₄Te₇ film within a conventional optical disk structure using non-amplified laser systems as laser sources. PACS 78.47.+p; 61.80.Ba; 47.20.Hw; 81.40.Ef