Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

Ab initio calculations of the ionization spectrum of SO2

The ionization spectrum of sulfur dioxide has been successfully studied by using the symmetry-adapted-cluster configuration-interaction （SAC-CI） general-R and SD-R methods and the basis set correlation-consistent polarized valence triple-zeta （cc-pVTZ）. The SAC-CI general-R method reproduces the experimental spectrum well for both the main peaks and the satellite peaks of ionization spectrum of SO2. The sequence of ionic states corresponding to main peaks of SO2 has been re-determined according to the SAC-CI conclusions and it is reordered as X^2A1, A^2B2, B2A2, C^2B1,D^2A1, E^2B2 and F^2A1. Besides, the equilibrium structures and adiabatic ionization potentials （AIPs） of ionic states of main peaks of SO2 are calculated by using the SAC-CI SD-R method.     

Critical radius and dipole polarizability for a confined system

The analytical transfer matrix method (ATMM) is applied to calculating the critical radius $r_{\rm c}$ and the dipole polarizability $\alpha_{\rm d}$ in two confined systems: the hydrogen atom and the Hulth\'{e}n potential. We find that there exists a linear relation between $r_{\rm c}^{1/2}$ and the quantum number $n_{r}$ for a fixed angular quantum number $l$, moreover, the three bounds of $\alpha_{\rm d}$ ($\alpha_{\rm d}^{K}$, $\alpha_{\rm d}^{B}$, $\alpha_{\rm d}^{U}$) satisfy an inequality: $\alpha_{\rm d}^{K}\leq\alpha_{\rm d}^{B}\leq\alpha_{\rm d}^{U}$. A comparison between the ATMM, the exact numerical analysis, and the variational wavefunctions shows that our method works very well in the systems.     

Kiselev黑洞的热力学性质和物质吸积特性

本文考虑带有黑洞视界和宇宙视界的Kiselev时空.研究以黑洞视界和宇宙视界为边界的系统的热力学性质.统一地给出了两个系统的热力学第一定律;在黑洞视界半径远小于宇宙视界半径的情况下,近似地计算了通过宇宙视界和黑洞视界的热能.然后,探讨Kiselev时空的物质吸积特性.在吸积能量密度正比于背景能量密度的条件下给出黑洞的吸积率,讨论了黑洞吸积率与暗能量态方程参数的关系.     

用H-W-ECR CVD系统实现氢化非晶硅薄膜在氢气环境下同时进行化学热退火和光诱导退火的研究

为了研究氢化非晶硅薄膜的稳定性，我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较，对样品还进行了热退火、热退火同时进行光诱导退火。同时，为了定量地分析光电导衰退，我们假设光电导衰退遵循扩展指数规律：1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β]，这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示：TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性，同时还发现，光学带隙明显减小、荧光光谱显著地朝着低能方向移动。     

Ab initio calculations on the α^3∑u^＋ state properties of dimer ^7Li2

The comparison between single-point energy scanning （SPES） and geometry optimization （OPT） in determining the equilibrium geometry of the α^3∑u^＋ state for ^7Li2 is made at numerous basis sets such as 6-311＋＋G（2df）, cc-PVTZ, 6-311＋＋G（2df, p）, 6-311G（3df,3pd）, 6-311＋＋G（2df,2pd）, D95（3df,3pd）, 6-311＋＋G, DGDZVP, 6-311＋＋G（3df,2pd）, 6-311G（2df,2pd）, D95V＋＋, CEP-121G, 6-311＋＋G（d,p）, 6-311＋＋G（2df, pd） and 6-311＋＋G（3df,3pd） in full active space using a symmetry-adapted-cluster/ symmetry-adapted-cluster configuration-interaction （SAC/SAC=CI） method presented in Gaussian03 program package. The difference of the equilibrium geometries obtained by SPES and by OPT is reported. Analyses show that the results obtained by SPES are more reasonable than those obtained by OPT. We have calculated the complete potential energy curves at those sets over a wide internuclear distance range from about 3.0α0 to 37.0α0, and the conclusion is that the basis set cc-PVTZ is the most suitable one. With the potential obtained at ccopVTZ, the spectroscopic data （Te, De, D0, ωe,ωeХe, αe and Be） are computed and they are 1.006 eV, 338.71 cm^-1, 307.12 cm^-1, 64.88 cm^-1, 3.41 cm^-1, 0.0187 cm^-1 and 0.279 cm^-1, respectively, which are in good agreement with recent measurements. The total 11 vibrational states are found at J=0. Their corresponding vibrational levels and classical turning points are computed and compared with available RKR data, and good agreement is found. One inertial rotation constant （By） and six centrifugal distortion constants （Dr Hv, Lv, My, Nv, and Ov） are calculated. The scattering length is calculated to be -27.138α0, which is in good accord with the experimental data.     

Co-Al-W基高温合金的团簇成分式

Co-Al-W基高温合金具有类似于Ni基高温合金的γ+γ'相组织结构.根据面心立方固溶体的团簇加连接原子结构模型,Ni基高温合金的成分式即最稳定的化学近程序结构单元可以描述为第一近邻配位多面体团簇加上次近邻的三个连接原子.本文应用类似方法,首次给出了Co-Al-W基高温合金的团簇成分式.利用原子半径和团簇共振模型,可计算出Co-Al-W三元合金的团簇成分通式,为[Al-Co_(12)](Co,Al,W)_3,即以Al为中心原子、Co为壳层原子的[Al-Co_(12)]团簇加上三个连接原子.对于多元合金,需要先将元素进行分类:溶剂元素——类Co元素Co (Co, Cr, Fe, Re, Ni,Ir,Ru)和溶质元素——类Al元素Al (Al,W,Mo, Ta,Ti,Nb,V等);进而根据合金元素的配分行为,将类Co元素分为Co~γ(Cr, Fe, Re)和Co~(γ')(Ni, Ir, Ru);根据混合焓,将类Al元素分为Al, W (W, Mo)和Ta (Ta, Ti, Nb, V等).由此,任何多元Co-Al-W基高温合金均可简化为Co-Al伪二元体系或者Co-Al-(W,Ta)伪三元体系,其团簇加连接原子成分式为[Al-Co_(12)](Co_(1.0)Al_(2.0))(或[Al-Co_(12)] Co_(1.0)Al_(0.5)(W,Ta)_(1.5)=Co_(81.250)Al_(9.375)(W,Ta)_(9.375) at.%).其中,γ与γ'相的团簇成分式分别为[Al-Co_(12)](Co_(1.5)Al_(1.5))(或[Al-Co_(12)] Co_(1.5)Al_(0.5)(W,Ta)_(1.0)=Co_(84.375)Al_(9.375)(W,Ta)_(6.250) at.%)和[Al-Co_(12)](Co_(0.5)Al_(2.5))(或[Al-Co_(12)] Co_(0.5)Al_(0.5)(W, Ta)_(2.0)=Co_(78.125)Al_(9.375)(W,Ta)_(12.500)at.%).例如,Co_(82)Al_9W_9合金的团簇成分式为[Al-Co_(12)]Co_(1.1)Al_(0.4)W_(1.4)(～[Al-Co_(12)]Co_(1.0)Al_(0.5)W_(1.5)),其中γ相的团簇成分式为[Al-Co_(12)]Co_(1.6)Al_(0.4)W_(1.0)(～[Al-Co_(12)]Co_(1.5)Al_(0.5)W_(1.0)),γ'相的团簇成分式为[Al-Co_(12)]Co_(0.3)Al_(0.5)W_(2.2)(～[AlCo_(12)]Co_(0.5)Al_(0.5)W_(2.0)).     

Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers

The antiferromagnetic (AFM) interlayer coupling effective field in a ferromagnetic/non-magnetic/ferromagnetic (FM/NM/FM) sandwich structure, as a driving force, can dramatically enhance the ferromagnetic resonance (FMR) frequency. Changing the non-magnetic spacer thickness is an effective way to control the interlayer coupling type and intensity, as well as the FMR frequency. In this study, FeCoB/Ru/FeCoB sandwich trilayers with Ru thickness ($t_{\rm Ru}$) ranging from 1 Å to 16 Å are prepared by a compositional gradient sputtering (CGS) method. It is revealed that a stress-induced anisotropy is present in the FeCoB films due to the B composition gradient in the samples. A $t_{\mathrm{Ru}}$-dependent oscillation of interlayer coupling from FM to AFM with two periods is observed. An AFM coupling occurs in a range of $2 {\rm Å} \le t_{\rm Ru} \le 8 {\rm Å}$ and over 16 $\mathrm{Å}$, while an FM coupling is present in a range of $t_{\rm Ru}< 2$ Å and $9 {\rm Å} \le t_{\rm Ru} \le 14.5 Å$. It is interesting that an ultrahigh optical mode (OM) FMR frequency in excess of 20 GHz is obtained in the sample with ${t}_{\mathrm{Ru}}= 2.5 \mathrm{Å}$ under an AFM coupling. The dynamic coupling mechanism in trilayers is simulated, and the corresponding coupling types at different values of $t_{\mathrm{Ru}}$ are verified by Layadi's rigid model. This study provides a controllable way to prepare and investigate the ultrahigh FMR films.     

Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO_3 interface

Two-dimensional electron gases(2 DEGs) formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_3/KTaO_3 system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_f~o,is lower than-350 kJ/(mol O) and the work function of the metal Φ is in the range of 3.75 eVΦ 4.4 eV.Furthermore,we found that the smaller absolute value of ⅢH_f~o and the larger value of Φ of the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_3/KTaO_3 interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.     

Studies on high-moment soft magnetic FeCo/Co thin films

The dependences of soft magnetic properties and microstructures of the sputtered FeCo (=FeFeCo薄膜 溅射条件 软磁性 高饱和磁化强度FeCo film, sputtering conditions, high saturation magnetization, soft magnetic properties2005-10-263/7/2006 12:00:00 AMThe dependences of soft magnetic properties and microstructures of the sputtered FeCo （=Fe65Co35） films on Co underlayer thickness tCo, FeCo thickness tFeCo, substrate temperature Ts and taxget-substrate spacing dT-s are studied. FeCo single layer generally shows a high coercivity with no obvious magnetic anisotropy. Excellent soft magnetic properties with saturation magnetization μ0Ms of 2.35 T and hard axis coercivity Hch of 0.25 kA/m in FeCo films can be achieved by introducing a Co underlayer. It is shown that sandwiching a Co underlayer causes a change in orientation and reduction in grain size from 70 nm to about 10 nm in the FeCo layer. The magnetic softness can be explained by the Hoffmann＇s ripple theory due to the effect of grain size. The magnetic anisotropy can be controlled by changing dT-S, and a maximum of 14.3 kA/m for anisotropic field Hk is obtained with dT-S=18.0 cm.     

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

An optimized silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) structure with side-wall p-type pillar (p-pillar) and wrap n-type pillar (n-pillar) in the n-drain was investigated by utilizing Silvaco TCAD simulations. The optimized structure mainly includes a p$+$ buried region, a light n-type current spreading layer (CSL), a p-type pillar region, and a wrapping n-type pillar region at the right and bottom of the p-pillar. The improved structure is named as SNPPT-MOS. The side-wall p-pillar region could better relieve the high electric field around the p$+$ shielding region and the gate oxide in the off-state mode. The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance ($R_{\rm on,sp}$). As a result, the SNPPT-MOS structure exhibits that the figure of merit (FoM) related to the breakdown voltage ($V_{\rm BR}$) and $R_{\rm on,sp}$ ($V_{\rm BR}^{2}R_{\rm on,sp}$) of the SNPPT-MOS is improved by 44.5%, in comparison to that of the conventional trench gate SJ MOSFET (full-SJ-MOS). In addition, the SNPPT-MOS structure achieves a much faster-witching speed than the full-SJ-MOS, and the result indicates an appreciable reduction in the switching energy loss.     

Enhanced optical nonlinear absorption of graded Au--TiO2 composite films

This paper reports that single-layer and graded Au-TiO2 granular composite films with Au atom content 15%- 66% were prepared by using reactive co-sputtering technique. The third-order optical nonlinearity of single-layer and graded composite films was investigated by using s- and p-polarized Z-scans in femtosecond time scale. The nonlinear absorption coefficient βeff of single-layer Au-TiO2 films is measured to be -2.3×10^3-0.76×10^3 cm/GW with Au atom content 15%-66%. The βeff value of the 10-layer Au-TiO2 graded film is enhanced to be -2.1×10^4cm/GW calculated from p-polarized Z-scans, which is about ten times the maximum βeff of single-layer films. Broadened response in the wavelength region 730-860 nm of the enhanced optical nonlinearity of graded Au-TiO2 composite films was also investigated.     

Isotopic effect of Cl2+ rovibronic spectra in the A-X system

This paper studies the isotopic effect of Cl2+ rovibronic spectra in the A2Πu(Ω=1/2) X 2Πg(Ω= 1/2) system.Based on the experimental results of the molecular constants of 35 Cl2+,it calculates the vibrational isotope shifts of the(2,7) and(3,7) band between the isotopic species 35 Cl+2,35 Cl 37 Cl+and 37 Cl2+,and estimates the rotational constants of both A 2 Π u and X 2 Π g states for the minor isotopic species 35 Cl 37 Cl+and 37 Cl2+.The experimental results of the spectrum of 35 Cl 37 Cl+(3,7) band proves the above mentioned theoretical calculation.The molecular constants and thus resultant rovibronic spectrum for 37 Cl2+ were predicted,which will be helpful for further experimental investigation.     

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5~MeV) at 360~K. Two groups of samples with low [O_i]=6.9× 10¹⁷~cm^-3 and high [ O_i]=1.06× 10¹⁸~cm^-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO₂ in lower concentration of oxygen specimen gets to maximum at 450~℃ and then dissapears at 500~℃, accompanied with the appearing of VO₃. For both kinds of specimens, the concentration of VO₃ reachs to maximum at 550~℃ and does not disappear completely at 600~℃.     

Effect of R substitution on magnetic properties and magnetocaloric effects of La1-xRxFe11.5Si1.5 compounds with R=Ce, Pr and Nd

<正>Magnetic properties and magnetocaloric effects of La_1-xR_xFe₁₁₀₅ Si₉105)（R=Pr,（0≤x≤0.5）;R = Ce and Nd, （0≤x≤0.3）） compounds are investigated.Partially replacing La with R = Ce,Pr and Nd in La_1-xR_xFe_11.5Si_1.5 leads to a reduction in Curie temperature due to the lattice contraction.The substitution of R for La causes an enhancement in field-induced itinerant electron metamagnetic transition,which leads to a remarkable increase in magnetic entropy change△S_m and also in hysteresis loss.However,a high effective refrigerant capacity RC_eff is still maintained in La_1-xR_xFe_11.5Si_1.5.In the present samples,a large△S_m and a high RC_eff have been achieved simultaneously.     

Two-electron and one-photon transitions in highly charged nickel-like ions

This paper calculates the transition wavelengths and probabilities of the two-electron and one-photon (TEOP) transition from the $(3{\rm s}^{-1}_{1/2}4{\rm d}_{j})_{J=1,2}$ to $(3{\rm p}^{-1}_{3/2}4{\rm s}_{1/2})_{J=1}$ and the $(3{\rm p}^{-1}_{1/2}4{\rm s}_{1/2})_{J=1}$ to $(3{\rm d}^{-1}_{j}4{\rm d}_{j'})_{J=1,2}$ for highly charged Ni-like ions with atomic number $Z$ in the range $47\leq Z\leq92$. In the calculations, the multi-configuration Dirac--Fock method and corresponding program packages GRASP92 and REOS99 were used, and the relativistic effects, correlation effects and relaxation effects were considered systematically. It is found that the TEOP transitions are very sensitive to the correlation of electrons, and the probabilities will be enhanced sharply in some special $Z$ regions along the isoelectronic sequence. The present TEOP transition wavelengths are compared with the available data from some previous publications, good agreement is obtained.     

Magnetic properties and magnetocaloric effect in RE55Co30Al10Si5 (RE = Er and Tm) amorphous ribbons

The magnetic and magnetocaloric effects (MCE) of the amorphous $RE_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ ($RE={\rm Er}$ and Tm) ribbons were systematically investigated in this paper. Compounds with $R ={\rm Er}$ and Tm undergo a second-order magnetic phase transition from ferromagnetic (FM) to paramagnetic (PM) around Curie temperature $T_{\rm C} \sim 9.3$ K and 3 K, respectively. For Er$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ compound, an obvious magnetic hysteresis and thermal hysteresis were observed at low field below 6 K, possibly due to spin-glass behavior. Under the field change of 0 T-5 T, the maximum values of magnetic entropy change ($-\Delta S_{\rm M}^{\rm max}$) reach as high as 15.6 J/kg$\cdot$K and 15.7 J/kg$\cdot$K for Er$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ and Tm$_{55}$Co$_{30}$Al$_{10}$Si$_{5}$ compounds, corresponding refrigerant capacity (RC) values are estimated as 303 J/kg and 189 J/kg, respectively. The large MCE makes amorphous $RE_{55}$Co$_{30}$Al$_{10}$Si$_{5 }$ ($RE={\rm Er}$ and Tm) alloys become very attractive magnetic refrigeration materials in the low-temperature region.     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.