CoxTi1－xO2－δ体材中氢退火引起的铁磁性及结构相变

利用固相反应法在700℃—1000℃不同的温度下、空气中烧结Co₃O₄ 和TiO₂混合物，制备了(Co₃O₄)_x/3(TiO2)_1-x(03，说明Co₃O₄与TiO₂反应形成了CoT iO₃；同时，在700 ℃低温和900 ℃以上的高温烧结样品中分别观察到了单相的 锐钛矿和金红石相结构.经高低温烧结的样品在500 ℃氢退火后，CoTiO₃相消失 ，锐钛矿相的Co_xTi_1-xO_2-δ形成.X射线光电子能谱(X PS)分析显示，氢退火样品中的Co以+2氧化价态存在，同时没有观察到金属态的Co，这说明 氢退火样品中的室温铁磁性不是源于金属Co颗粒的形成，而是与钙钛矿结构的CoTiO_{3< /sub>相的消失和锐钛矿型的CoxTi1-xO2-δ相的形成 有关.(Co3O4)x/3(TiO2)1-x( 0x}Ti_1-xO_2-δ相的本征铁磁性，伴随着结构相变而产生的Co离子之间的铁磁交换相互作用或 许是样品室温铁磁性产生的根本原因. 关键词： 室温铁磁性 结构相变 锐钛矿 氢退火     

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射     

探索基于人工超晶格LaFeO3-YMnO3和自然超晶格n-LaFeO3-Bi4Ti3O12薄膜多铁性

基于纳米尺寸下复合铁电材料和反铁磁性材料是一个探索多铁性材料有效的方法. 利用激光脉冲沉积制备出LaFeO₃-YMnO₃人工超晶格和掺入不同层LaFeO₃, BiFeO₃的Bi₄Ti₃O₁₂的外延薄膜. 通过系统的X射线衍射、透射电子显微术、扫描透射电子显微术下的能量损失谱表征证明这些样品具有原子尺寸上清晰的界面和完整的层状结构. 磁性测试证明这些材料具有亚铁磁性. 特别是在0.5和1.5LaFeO₃-Bi₄Ti₃O₁₂中的亚铁磁性甚至能保持到室温. 就铁电性而言, 铁电性测试显示出LaFeO₃-YMnO₃和插入BiFeO₃的Bi₄Ti₃O₁₂样品中存在较大的漏电流, 而在0.5LaFeO₃-Bi₄Ti₃O₁₂样品中存在铁电性. 因此在0.5LaFeO₃-Bi₄Ti₃O₁₂中能够实现亚铁磁和铁电共存. 其次发现当掺入多层的钙钛矿(3层SrTiO₃或2.5层LaFeO₃)后, Bi₄Ti₃O₁₂ 的层状结构将出现结构失稳现象. 这些工作对于利用纳米复合开发新颖多铁性提供一些实例.     

结构相变对Fe掺杂TiO2薄膜室温铁磁性的影响

采用直流磁控溅射方法在玻璃基底上制备了不同Fe掺杂浓度的TiO₂薄膜, 并对其晶体结构和磁特性进行了研究.在所有掺杂样品中,均观察到了室温铁磁性, 磁性源于Fe离子与其近邻空间分布的空穴相互作用. 在掺杂量为7%的锐钛矿相薄膜中观察到了最大的磁化强度. 随着Fe掺杂浓度的进一步增加, TiO₂的晶体结构逐渐由锐钛矿相向金红石相转变,并且磁性减弱. 不同结构的TiO₂中Ti–O键长不同,导致替代的磁性Fe离子与空穴的作用强度发生改变, 进而使其磁性发生变化. 关键词： 稀磁半导体 结构相变 铁磁性     

复合薄膜NiFe2 O4-BiFeO3 中的磁电耦合

采用化学溶液沉积法(CSD)在Au/Ti/SiO₂/Si衬底上通过自组装生长制备了BiFeO₃-NiFe₂O₄ (BFO-NFO)多铁性复合薄膜.X射线衍射图谱(XRD)显示形成了分离的钙钛矿结构的铁电相BFO和尖晶石结构的铁磁相NFO. NFO的引入导致复合薄膜的泄漏电流减小,剩余极化强度增加.相比于纯BFO薄膜,0.25NFO-0.75BFO样品泄漏电流下降了约两个数量级,剩余极化强度( M _{关键词： 多铁性复合薄膜 磁电耦合 铁电性 铁磁性}     

Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi_{4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词： sol-gel法 铁电薄膜 4Ti3O12')" href="#">Bi4Ti3O12 C-V特性}     

单晶和孪晶的Zn0.96Co0.04O稀磁半导体薄膜的制备与研究

采用分子束外延技术分别在不同晶面的蓝宝石（sapphire Al₂O₃）基片上制备了沿c轴生长的Zn_0.96Co_0.04O稀磁半导体薄膜.发现在Al₂O₃（1120）晶面（a面）上薄膜是二维层状外延生长的高质量单晶薄膜,而在Al₂O₃（0001）晶面（c面）上薄膜却具有有趣的孪晶结构,部分区域相互之间有一个30°的面内转动来减少和基片之间的失配度.在孪晶薄膜中存在的这些相互旋转形成的区域界面上会引起载流子强烈的散射作用,导致载流子迁移率的下降和平均自由程的缩短.利用X射线吸收精细结构技术证明了无论单晶还是孪晶的Zn_0.96Co_0.04O薄膜中所有的Co都以+2价替代进入了ZnO的晶格,而没有形成任何杂相.而对其磁性研究发现,孪晶的薄膜样品比高质量的单晶薄膜样品具有大得多的饱和磁矩.这充分说明孪晶薄膜中的铁磁性来源与缺陷有关.我们还对铁磁性耦合机制进行了探讨. 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 单晶和孪晶薄膜     

InP/SiO2纳米复合膜的微观结构和光学性质

应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP/SiO₂复合薄膜,并在几种条件下对这些薄膜进行退火.X射线光电子能谱和卢瑟福背散射实验结果表明,复合薄膜中InP和SiO₂的化学组分都大体上符合化学计量配比.X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒.磷气氛保护下的高温(520℃)退火可以消除复合薄膜中残存的In和In₂O₃并得到了纯InP/SiO₂纳米复合薄膜.实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强 关键词： InP 纳米晶粒 微观结构 光学性质     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

Co/Co3O4/PZT多铁复合薄膜的交换偏置效应及其磁电耦合特性

本文采用溶胶-凝胶工艺并结合脉冲激光沉积技术, 在Pt/Ti/SiO₂/Si衬底上制备了Co/Co₃O₄/PZT多铁复合薄膜. 对复合薄膜的微结构和组分进行了表征, 并系统研究了复合薄膜中的交换偏置效应及其对磁电耦合作用的影响. 研究结果表明, 复合薄膜在77 K具有明显的交换偏置效应, 交换偏置场达到80 Oe, 且交换偏置场及矫顽场均随温度降低而增大. 当温度降低到10 K时, 交换偏置场增至160 Oe. X射线光电子能谱(XPS)测试结果证实在Co和Co₃O₄界面处存在约5 nm厚的CoO层, 表明77 K下的交换偏置效应源自反铁磁的CoO层对Co的钉扎作用. 观察到复合薄膜的电容-温度曲线随着外加磁场大小和方向的改变而呈现出规律性的变化, 表明复合薄膜存在磁电耦合效应. 进一步研究发现, 在低温下复合薄膜呈现出各向异性的磁电容效应, 与磁场大小和方向密切相关. 复合薄膜的这种磁电耦合特性主要与复合体系的交换偏置效应及基于界面应力传递的磁电耦合作用有关, 本文对其中的物理机理进行了详细讨论与分析.     

The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films

In this paper, we report investigation of room temperature (RT) ferromagnetism in In₂O₃ (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10⁻⁵ emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm³ at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.     

Room temperature ferromagnetism in vacuum-annealed TiO2 thin films

Thin films of pure TiO₂ have been prepared using both spin-coating and sputter-deposition techniques on sapphire and quartz substrates. The structural characteristics of the films have been investigated in detail using Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM). When annealed in vacuum, all films demonstrate room temperature ferromagnetism, while the air-annealed samples show much smaller, often negligible, magnetic moments. The magnetization of the vacuum-annealed sputtered samples depends on film thickness, with the volume magnetization decreasing monotonically with increasing thickness. Furthermore, the magnetization per unit area also decreases slightly with increasing film thickness. These results suggest that ferromagnetism in the vacuum-annealed TiO₂ films is mediated by surface defects or interfacial effects, but does not arise from stoichiometric crystalline TiO₂.     

Amorphous Er2O3 films for antireflection coatings

This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si(001) substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average reflectances (400-1000 nm) is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells.     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Bi2Ti2O7/Si薄膜的制备及C-V特性研究

采用化学溶液分解法(CSD)在Si衬底上制备了Bi₂Ti₂O₇薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi₂Ti₂O₇相的多晶材料.同时还研究了AuBi₂Ti₂O₇/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi₂Ti₂O关键词： C-V特性 2Ti₂O₇薄膜')" href="#">Bi₂Ti₂O₇薄膜 电荷迁移     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Si基铁电Bi3.15Nd0.85Ti3O12多层薄膜的一致取向生长和性能的研究

采用脉冲激光沉积(PLD)技术，利用LSCO/CeO₂/YSZ多异质缓冲层，在Si(100)基 片上成功地制备了c轴一致取向的Bi_3.15Nd_0.85Ti₃O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征，考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响，确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线，表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性. 关键词： 3.15Nd_0.85Ti₃O₁₂')" href="#">Bi_3.15Nd_0.85Ti₃O₁₂ 铁电薄 膜 多层异质结 脉冲激光沉积     

Room-temperature ferromagnetism in Sn1−xMnxO2 nanocrystalline thin films prepared by ultrasonic spray pyrolysis

Sn_1−xMn_xO₂ (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn_1−xMn_xO₂ thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn³⁺ ions have substituted Sn⁴⁺ ions without changing the tetragonal rutile structure of pure SnO₂. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn_1−xMn_xO₂ (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10⁻⁴ emu saturation magnetization and 92 Oe coercivity in case of Sn_1−xMn_xO₂ (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.     

Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr2O3(0 0 0 1) thin film

The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/α-Cr₂O₃ thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An α-Cr₂O₃(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the α-Cr₂O₃(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated α-Cr₂O₃(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr₂O₃. The valence state of the Cr₂O₃(0 0 0 1) layer is similar to that of bulk Cr₂O₃. The ultrathin Co film directly grown on the α-Cr₂O₃(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Néel temperature of Cr₂O₃ for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr³⁺ in Cr₂O₃(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism.     

Preparation and photo-induced superhydrophilicity of composite TiO2-SiO2-In2O3 thin film

In this work, TiO₂-SiO₂-In₂O₃ composite thin films on glass substrates were prepared by the sol-gel dip coating process. X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the structural and chemical properties of the films. UV-vis spectrophotometer was used to measure the transmittance spectra of thin films. The water contact angle (WCA) of thin films during UV/vis irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that fabrication of composite film has a significant effect on transmittance and superhydrophilicity of TiO₂ films.