SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺

Preparation and characterization of SrBi2Ta2O9/Bi4Ti3O12 multiple thin films on p-Si substrate

SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂ multiple thin films were prepared on p-Si substrates by sol-gel method. The effect of ratio of SrBi₂Ta₂O₉:Bi₄Ti₃O₁₂ and annealing temperature on growth behavior, ferroelectric characteristics of SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂ multiple thin films were investigated. Bi₄Ti₃O₁₂ films on p-Si exhibit preferred c-axis-orientation growth, which favored the grow the high quality SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂ multiple thin films. The remanent polarization P_r and the coercive field E_c of SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂ multiple films both chage with the thickness ratio of SrBi₂Ta₂O₉:Bi₄Ti₃O₁₂ and annealing temperature. An appropriate ratio of multilayer thin films consisting of 1 layer of SrBi₂Ta₂O₉ and 3 layers of Bi₄Ti₃O₁₂ annealed at 650—700 ℃ gave the best ferroelectric properties with P_r of 8.1 μC/cm² and E_c of 130 kV/cm, which is comparable to that of pure Bi₄Ti₃O₁₂ films, and was fatigue-free up to 10¹¹ switching cycles.