磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射

Analysis of Y2 O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering

Y₂O₃-TiO₂ composite film were deposited on Si substrate at room temperature by means of radio frequency magnetron sputtering. The crystalline state and topography of the film before and after annealing were measured by XRD and AFM, and the mechanism of the film being more compact was discussed. The result revealed that the evenness and compactness of the film can be improved with increasing the sputtering power, which is due to the fact of more Y₂O₃ filling the pores around TiO₂with raising sputtering power, which inhibited the growth of big TiO\-2 grains and improved the evenness and compactness of film. After annealing, XRD pattern indicated that the addition of Y₂O₃ favors the formation of rutile TiO₂ film which has high-dielectric constant.