A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

0.18 μm MOSFET器件的总剂量辐照效应

对0.18 μm metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素. 关键词： 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 MOSFET     

Measurement and analysis of fission rates in a spherical mockup of uranium and polyethylene

Measurements of the reaction rate distribution were carried out using two kinds of Plate Micro Fission Chamber （PMFC）. The first is a depleted uranium chamber and the second an enriched uranium chamber. The material in the depleted uranium chamber is strictly the same as the material in the uranium assembly. With the equation solution to conduct the isotope contribution correction, the fission rate of 238U and 235U were obtained from the fission rate of depleted uranium and enriched uranium. Then, the fission count of 238U and 235U in an individual uranium shell was obtained. In this work, MCNP5 and continuous energy cross sections ENDF/BV.0 were used for the analysis of fission rate distribution and fission count. The calculated results were compared with the experimental ones. The calculation of fission rate of DU and EU were found to agree with the measured ones within 10% except at the positions in polyethylene region and the two positions near the outer surface. Because the fission chamber was not considered in the calculation of the fission counts of 238U and 235U, the calculated results did not agree well with the experimental ones.     

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient(SET) occurring in partially depleted silicon-on-insulator(PDSOI) metal–oxide–semiconductor(MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test(DUT). The dependences of SET characteristics on drain-induced barrier lowering(DIBL) and the parasitic bipolar junction transistor(PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.     

Direct Approach to Construct the Periodic Wave Solutions for Two Nonlinear Evolution Equations

With symbolic computation, the Hirota method and Riemann theta function are employed to directly construct the periodic wave solutions for the Hirota-Satsuma equation for shallow water waves and Boiti-Leon-Manna- Pempinelli equation. Then, the corresponding figures of the periodic wave solutions are given. Fhrthermore, it is shown that the known soliton solutions can be reduced from the periodic wave solutions.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究

基于⁶⁰Co γ射线源研究了总剂量辐射对绝缘体上硅（silicon on insulator,SOI）金属氧化物半导体场效应晶体管器件的影响.通过对比不同尺寸器件的辐射响应,分析了导致辐照后器件性能退化的不同机制.实验表明：器件的性能退化来源于辐射增强的寄生效应;浅沟槽隔离（shallow trench isolation,STI）寄生晶体管的开启导致了关态漏电流随总剂量呈指数增加,直到达到饱和;STI氧化层的陷阱电荷共享导致了窄沟道器件的阈值电压漂移,而短沟道器件的阈值电压漂移则来自于背栅阈值耦合;在同一工艺下,尺寸较小的器件对总剂量效应更敏感.探讨了背栅和体区加负偏压对总剂量效应的影响,SOI器件背栅或体区的负偏压可以在一定程度上抑制辐射增强的寄生效应,从而改善辐照后器件的电学特性.     

深亚微米器件沟道长度对总剂量辐照效应的影响

研究了180 nm 互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响. 在其他条件如辐照偏置、器件结构等不变的情况下, 氧化层中的陷阱电荷决定了辐照响应. 浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型, 从而形成大的关态泄漏电流. 这个电流与沟道长度存在一定的关系, 沟道长度越短, 泄漏电流越大. 首次发现辐照会增强这个电流的沟道长度调制效应, 从而使得器件进一步退化.     

Flexible 3D deep microstructures of silica glass by laser-induced backside wet etching

The well-controlled fabrication of microtrenches including inclined features using normal incidence with gradual shifting of the irradiated area was demonstrated. Based on the variation of trench width depending on the laser fluence, the existence of gaps between the edge of the irradiated area and sidewall of the trench was shown. Because of these gaps, the shifted laser pulse can stay at the bottom of the trenches in the fabrication of the inclined features. In laser-induced backside wet etching (LIBWE), the photo-activated region generated within organic solution would act on the glass surface and results in etching. It was indicated that the photo-activated region generated at the bottom of the trenches acted not only on the bottom of the trench but also on the sidewalls. Based on such etching of the sidewall, fabrication of inclined features becomes possible. In this method, the tilting angle can be changed within one deep trench. Flexible structure formation deep inside the silica glass can be achieved.     

Freestanding graphene writing on a silicon carbide wafer

Freestanding graphene on a trench has been fabricated extensively using a transfer process of chemical vapor deposition grown graphene. Here, we demonstrate that freestanding graphene can be grown directly on a trench without a transfer process. A shallow trench was made on a 6H–SiC(0001) wafer using a focused ion beam lithography. The shallow trench was heated to a high temperature under Ar atmosphere. The heat treatment made the shallow trench become deeper and wider. Subsequently, epitaxial graphene was floating on the trench, resulting in freestanding graphene, where underlying bulk SiC was self-etched after the growth of epitaxial graphene. The freestanding graphene on a trench was characterized using Raman spectroscopy and atomic force microscopy. Such freestanding graphene writing can be applied to semiconductor fabrication process of freestanding graphene devices without a transfer process.     

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.     

Mechanism study of sidewall damage in deep silicon etch

The formation and etch mechanism of sidewall damage in deep silicon etch using standard Bosch process have been investigated in this work for the first time. The sidewall damage occurs at a certain depth where the sidewall is not sufficiently protected from lateral etch during long-time ion bombardment, and further, we demonstrate that the formation of sidewall damage is not only related to passivation film on the trench sidewall, but also closely relies on ion-enhanced etch mechanism. In addition, it is found that the starting depth of sidewall damage is almost inversely proportional to etch pressure and ion incidence angle, which can be attributed to a broader ion angular distribution (IAD) at higher chamber pressure. Then, a quantitative etch model based on IAD function has been also proposed to investigate the dependence of the starting depth of sidewall damage on ion incidence angle. Finally, by optimizing process parameters, high-quality etch profile without any observable sidewall damage has been successfully achieved at etch pressure of 60 mTorr.     

Characterization of regular periodic surface structure by multi-pulse laser irradiation of a Zinc target

The circular-like sidewall and trench around the periphery of the crater are obtained on Zinc metal surface subjected to fewer than 200 cumulative pulses laser ablation.These patterns can be attributed to the higher secondary heating by regular plasma spherical pressure.The 600 pulses laser ablation,however,results in the formation of undesirable bulk wrinkles of super-heated liquid at the side of the trench.These features may be applied in micro-manufacturing of high localizability and selectivity using laser zone texturing.     

U型槽刻蚀工艺对GaN垂直沟槽型金属-氧化物-半导体场效应晶体管电学特性的影响

U型槽的干法刻蚀工艺是GaN垂直沟槽型金属-氧化物-半导体场效应晶体管(MOSFET)器件关键的工艺步骤,干法刻蚀后GaN的侧壁状况直接影响GaN MOS结构中的界面态特性和器件的沟道电子输运.本文通过改变感应耦合等离子体干法刻蚀工艺中的射频功率和刻蚀掩模,研究了GaN垂直沟槽型MOSFET电学特性的工艺依赖性.研究结果表明,适当降低射频功率,在保证侧壁陡直的前提下可以改善沟道电子迁移率,从35.7 cm^2/(V·s)提高到48.1 cm^2/(V·s),并提高器件的工作电流.沟道处的界面态密度可以通过亚阈值摆幅提取,射频功率在50 W时界面态密度降低到1.90×10^12 cm^-2·eV^-1,比135 W条件下降低了一半.采用SiO2硬刻蚀掩模代替光刻胶掩模可以提高沟槽底部的刻蚀均匀性.较薄的SiO2掩模具有更小的侧壁面积,高能离子的反射作用更弱,过刻蚀现象明显改善,制备出的GaN垂直沟槽型MOSFET沟道场效应迁移率更高,界面态密度更低.     

Remarks on interpretations of the Eotvos experiment and misinterpretation of E=mc^2

The Eotvos experiment on the verification of equivalence between inertial mass and gravitational mass of a body is famous for its accuracy. A question is, however, can these experimental results be applied to the case of a physical space in general relativity, where the space coordinates could be arbitrary？ It is pointed out that it can be validly applied because it has been proven that Einstein＇s equivalence principle for a physical space must have a frame of reference with the Euclidean-like structure. Will claimed further that such an overall accuracy can be translated into an accuracy of the equivalence between inertial mass and each type of energy. It is shown that, according to general relativity, such a claim is incorrect. The root of this problem is due to an inadequate understanding of special relativity that produced the famous equation E=mc^2, which must be understood in terms of energy conservation. Concurrently, it is pointed out that this error is a problem in Will＇s book, ‘Theory and Experiment in Gravitational Physics＇.     

Status and accuracy of the Monte Carlo generators for luminosity measurements

The status and accuracy of the precision Monte Carlo generators used for luminosity measurements at flavour factories is reviewed. It is shown that, thanks to a considerable, long-term effort in tuned comparisons between the predictions of independent programs, as well as in the validation of the generators against the presently available calculations of the next-to-next-to-leading order QED corrections to Bhabha scattering, the theoretical accuracy reached by the most precise tools is of about one per mille. This error estimate is valid for realistic experimental cuts, appears to be quite robust and is already sufficient for very accurate luminosity measurements. However, recent progress and possible advances to further improve it are also discussed.     

Beam tail effect of a performance-enhanced EC-ITC RF gun

The beam tail effect of multi-bunches will influence the electron beam performance in a high intensity thermionic RF gun. Beam dynamic calculations that illustrate the working states of single beam tail and multi-pulse feed-in of a performance-enhanced EC-ITC （external cathode independent tunable cavity） RF gun for an FEL （free electron laser） injector are performed to estimate the extracted bunch properties. By using both Parmela and homemade MATLAB codes, the effects of a single beam tail as well as interactions of multi-pulses are analyzed, where a ring-based electron algorithm is adopted to calculated RF fields and the space-charge field. Furthermore, the procedure of unexpected deviated-energy particles mixed with an effective bunch head is described by the MATLAB code as well. As a result, the performance-enhanced EC-ITC RF gun is proved to have the capability to extract continual stable bunches suitable for a high requirement THz-FEL.     

Entropy of Quantum Dynamical Systems and Sufficient Families in Orthomodular Lattices with Bayessian State

The purpose of the present paper is to study the entropy hs（Ф） of a quantum dynamical systems Ф = （ L, s, Ф）, where s is a bayessian state on an orthomodular lattice L. Having introduced the notion of entropy hs（ Ф, A） of partition A of a Boolean algebra B with respect to a state s and a state preserving homomorphism Ф, we prove a few results on that, define the entropy of a dynamical system hs（Ф）, and show its invariance. The concept of sufficient families is also given and we establish that hs （Ф） comes out to be equal to the supremum of hs （Ф,A）, where A varies over any sufficient family. The present theory has then been extended to the quantum dynamical system （ L, s, Ф）, which as an effect of the theory of commutators and Bell inequalities can equivalently be replaced by the dynamical system （B, s0, Ф）, where B is a Boolean algebra and so is a state on B.     

First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

Coordinated Control of Multi-Agent Systems with a Varying-Velocity Leader and Input Saturation

In this paper, we investigate a leader-following tracking problem for multi-agent systems with bounded inputs. We propose a distributed bounded protocol for each follower to track a leader whose states may not be completely measured. We theoretically prove that each agent can follow the leader with estimable track errors. Finally, some numerical simulations are presented to illustrate our theoretical results.