| Bias dependence of a deep submicron NMOSFET response to total dose irradiation |
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| 作者姓名： | 刘张李 胡志远 张正选 邵华 陈明 毕大炜 宁冰旭 邹世昌 |
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| 作者单位： | State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences Graduate University of Chinese Academy of Sciences |
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| 基金项目： | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences, Shanghai 200050, China |
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| 摘 要： | Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.
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| 关 键 词： | NMOSFET 深亚微米 总剂量 半导体场效应晶体管 照射 Si/SiO2 反应 偏置 |
| 收稿时间： | 2010-10-29 |
Bias dependence of a deep submicron NMOSFET response to total dose irradiation |
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| Liu Zhang-Li,Hu Zhi-Yuan,Zhang Zheng-Xuan,Shao Hu,Chen Ming,Bi Da-Wei,Ning Bing-Xu and Zou Shi-Chang.Bias dependence of a deep submicron NMOSFET response to total dose irradiation[J].Chinese Physics B,2011,20(7):70701-070701. |
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| Authors: | Liu Zhang-Li Hu Zhi-Yuan Zhang Zheng-Xuan Shao Hu Chen Ming Bi Da-Wei Ning Bing-Xu and Zou Shi-Chang |
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| Institution: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions. The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed. The high electric fields at the corners are partly responsible for the subthreshold hump effect. Charge trapped in the isolation oxide, particularly at the Si/SiO2 interface along the sidewalls of the trench oxide creates a leakage path, which becomes a dominant contributor to the off-state drain-to-source leakage current in the NMOSFET. Non-uniform charge distribution is introduced into a three-dimensional (3D) simulation. Good agreement between experimental and simulation results is demonstrated. We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions. |
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| Keywords: | bias condition oxide trapped charge shallow trench isolation total ionizing dose |
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