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1.
We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.  相似文献   
2.
Total ionizing dose responses of different transistor geometries after being irradiated by ~(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.  相似文献   
3.
Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.  相似文献   
4.
The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.  相似文献   
5.
研究了180 nm 互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响. 在其他条件如辐照偏置、器件结构等不变的情况下, 氧化层中的陷阱电荷决定了辐照响应. 浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型, 从而形成大的关态泄漏电流. 这个电流与沟道长度存在一定的关系, 沟道长度越短, 泄漏电流越大. 首次发现辐照会增强这个电流的沟道长度调制效应, 从而使得器件进一步退化.  相似文献   
6.
刘张李  胡志远  张正选  邵华  宁冰旭  毕大炜  陈明  邹世昌 《物理学报》2011,60(11):116103-116103
对0.18 μm metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素. 关键词: 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 MOSFET  相似文献   
7.
We investigate the effects of 60 Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator(PDSOI)input/output(I/O) n-MOSFETs. A shallow trench isolation(STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide,is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose(TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower(DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.  相似文献   
8.
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.  相似文献   
9.
Silicon-on-insulator(SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor(CMOS) process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.  相似文献   
10.
燃料特性对车用柴油机有害排放的影响   总被引:1,自引:0,他引:1  
研究了车用柴油机燃用不同品质燃油时,其排气烟度、颗粒PM、氮氧化物NOx、碳氢HC和一氧化碳的排放特性,采用了五种不同硫含量、芳烃含量和十六烷值的柴油,进行了发动机台架实验和模拟整车NEDC循环实验。结果表明,随着燃油硫含量的减少,柴油机排气烟度、HC、CO、SO2排放有所下降;模拟整车NEDC循环的PM排放显著降低;NOx排放的变化幅度很小。随着燃油芳烃含量的降低,柴油机排气烟度、PM、NOx、HC、CO排放的降幅显著。随着燃油十六烷值的升高,柴油机的排气烟度大都呈持续下降趋势;PM、HC排放显著降低;NOx、CO排放的变化幅度较小。  相似文献   
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