| 深亚微米器件沟道长度对总剂量辐照效应的影响 |
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| 引用本文： | 胡志远,刘张李,邵华,张正选,宁冰旭,毕大炜,陈明,邹世昌.深亚微米器件沟道长度对总剂量辐照效应的影响[J].物理学报,2012,61(5):50702-050702. |
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| 作者姓名： | 胡志远 刘张李 邵华 张正选 宁冰旭 毕大炜 陈明 邹世昌 |
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| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050／中国科学院研究生院,北京100039
2. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 |
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| 摘 要： | 研究了180 nm 互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响. 在其他条件如辐照偏置、器件结构等不变的情况下, 氧化层中的陷阱电荷决定了辐照响应. 浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型, 从而形成大的关态泄漏电流. 这个电流与沟道长度存在一定的关系, 沟道长度越短, 泄漏电流越大. 首次发现辐照会增强这个电流的沟道长度调制效应, 从而使得器件进一步退化.
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| 关 键 词： | 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 金属氧化物半导体场效晶体管 |
| 收稿时间： | 2011-03-12 |
| 修稿时间： | 7/4/2011 12:00:00 AM |
The influence of channel length on total ionizing dose effect in deep submicron technologies |
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| Hu Zhi-Yuan,Liu Zhang-Li,Shao Hu,Zhang Zheng-Xuan,Ning Bing-Xu,Bi Da-Wei,Chen Ming and Zou Shi-Chang.The influence of channel length on total ionizing dose effect in deep submicron technologies[J].Acta Physica Sinica,2012,61(5):50702-050702. |
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| Authors: | Hu Zhi-Yuan Liu Zhang-Li Shao Hu Zhang Zheng-Xuan Ning Bing-Xu Bi Da-Wei Chen Ming and Zou Shi-Chang |
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| Institution: | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100039;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100039;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100039;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100039;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese
Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determined by the charges trapped in the oxide. The off-state leakage due to the charges trapped in the shallow trench isolation oxide inverting the parasitic sidewall channel has correlation with the channel length. A shorter channel leads to a larger leakage current. For the first time, we report that the leakage current also exhibits the radiation enhanced channel-length modulation effect, which further degrades the device performance. |
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| Keywords: | total ionizing dose shallow trench isolation oxide trapped charge metal-oxide-semiconductor field effect transistor |
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