| 0.18 μm MOSFET器件的总剂量辐照效应 |
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| 引用本文： | 刘张李,胡志远,张正选,邵华,宁冰旭,毕大炜,陈明,邹世昌.0.18 μm MOSFET器件的总剂量辐照效应[J].物理学报,2011,60(11):116103-116103. |
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| 作者姓名： | 刘张李 胡志远 张正选 邵华 宁冰旭 毕大炜 陈明 邹世昌 |
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| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海 200050;
2. 中国科学院研究生院,北京 100039 |
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| 基金项目： | 中国科学院微小卫星重点实验室开放基金资助的课题. |
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| 摘 要： | 对0.18 μm metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素.
关键词：
总剂量效应
浅沟槽隔离
氧化层陷阱正电荷
MOSFET
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| 关 键 词： | 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 MOSFET |
| 收稿时间： | 2010-12-13 |
Total ionizing dose effect of 0.18μm nMOSFETs |
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| Liu Zhang-Li,Hu Zhi-Yuan,Zhang Zheng-Xuan,Shao Hu,Ning Bing-Xu,Bi Da-Wei,Chen Ming and Zou Shi-Chang.Total ionizing dose effect of 0.18μm nMOSFETs[J].Acta Physica Sinica,2011,60(11):116103-116103. |
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| Authors: | Liu Zhang-Li Hu Zhi-Yuan Zhang Zheng-Xuan Shao Hu Ning Bing-Xu Bi Da-Wei Chen Ming and Zou Shi-Chang |
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| Institution: | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, Chi;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, Chi;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, Chi;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, Chi;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | A 0.18 μm MOSFET with shallow trench isolation is exposed to a γ-ray radiation. The parameters such as off-state leakage current, threshold voltage, transconductance, gate leakage current, and subthreshold slope are analyzed for pre- and post-irradiation. By introducing constant sheet charges at the shallow trench isolation oxide sidewall, good agreement between 3D simulation and experiment result is demonstrated. We believe that the thin gate oxide is insensitive to radiation, and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current, ultimately limiting the tolerance of CMOS circuits. |
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| Keywords: | total ionizing dose shallow trench isolation oxide trapped charge MOSFET |
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