有机及高分子薄膜电致发光

有机薄膜电致发光，因其具有低压直流驱动、高亮度、高效率、多色、能制成大面积等优点，有可能制产板显示，成为当前研究的特点，本文介绍了有机及高分子电致发光发展的历史、器件结构、发光原理和它的未来。     

Wideband Antireflection Film Fabricated by Glancing Angle Deposition

Graded-index ZrO2 films has been fabricated on K9 glass by glancing angle deposition. Because the index mismatch at the interface has been reduced, the film results in wideband high-transmission antireflection. From 400nm to 1200nm, the film reflection is lower than 0.8% and the lowest value is 0.2% at 432nm.     

金属薄膜电阻特性与厚度测量

考察不同沉积时间的金属铝与铜的薄膜的沉积态,电阻变化与厚度,厚度测量采用实验室光学干涉和透过率对比方法.金相显微与铝铜电阻变化的测量表明,不连续薄膜与连续过渡之间,电阻显著变化处不同.铝膜电阻随时间变化过程开始时存在波动状态.     

沉积在α-Al２Ｏ3分形基底上Ag薄膜的特性

报道了采用磁控溅射法在α－Ａｌ_２Ｏ₃分形基底上沉积Ａｇ薄膜表面的形貌、结晶状态以及其Ｖ－Ｉ特性．结果表明：分形的Ａｌ_２Ｏ₃基底导致Ａｇ薄膜具有起伏不平的结构、较差的结晶状态并且存在大量的孔洞，它们同样受基底温度和薄膜厚度的影响．在一定的厚度范围内，Ａｇ薄膜呈现反常的非线性Ｉ（Ｖ）特性，其行为也受薄膜厚度、基底温度和测试环境的强烈影响． 关键词：     

金刚石薄膜电致发光现象的研究进展

阐明了金刚石薄膜电致发光研究的重要意义．综述了金刚石薄膜电致发光现象研究的进展情况，指出目前该方面研究中存在的问题，并提出了进一步提高金刚石薄膜蓝区电致发光强度的可能途径．     

α-C:H薄膜及其在硅太阳电池上作增透膜的研究

采用高频等离子体汽相淀积法在不同材料衬底上淀积出α-C:H薄膜。Raman谱分析表明,该薄膜既具有类金刚石相,又具有金刚石相。测量了该薄膜可见光范围的透射率和折射率。本文提出把该薄膜涂覆在硅太阳电池上作光学增透膜,使其在0.55—1.0μm波长范围内光谱响应明显提高,并使该电池短路电流增加率达38％。 关键词：     

Co-Zr非晶薄膜的磁感生各向异性

利用射频溅射法制得的Co₉₁Zr₉和Co₈₆Zr₁₄两种成分的样品,对其感生各向异性在等温退火时的再取向作了详细研究。发现其热稳定性随含Zr量的增加而提高,求得其激活能分别为1.7eV和2.5eV。并对其感生各向异性随含非磁性金属原子的增加而下降的现象给出一个新解释。 关键词：     

掺杂聚合物薄膜的蓝色电致发光

有机薄膜电致发光(OTFEL)自从Tangu[1,2],发表了高效、高亮度的双层结构器件以来,因其驱动电压低、直流驱动、亮度高、效率高、可制成大面积的平板显示而成为当前发光器件研究的热点.但由于有机膜的稳定性差,因此人们逐渐把注意力转向具有稳定结构的聚合物.     

Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering

CuInSe2(CIS) nanoparticle thin films have been prepared by radio frequency reactive magnetron sputtering from compound ternary fan-shaped targets on low-temperature substrates with pure argon gas as the atmosphere.The stoichiometry of the ternary compound semiconductor quantum dots can easily be controlled by the ratios of the ternary elements and sputtering parameters.CIS nanoparticle thin films regularly shaped and distributed reasonably uniform in size on substrates of 7059 glass etc can be grown in this way.The average particle diameter can be varied between 40-80 nm by an appropriate choice of the substrate temperature,power density and total CIS coverage.the optical and electrical properties of the CIS films have also been studied.     

高聚物(PEO)n-CuBr2薄膜在流体静高压下的介电常数研究

选用分子量500万的聚氧化乙烯,通过混溶蒸发法制备出一系列高聚物(PEO)_(?)-CuBr_2(n=4,8,12,16,24)薄膜,并在0.1—2443MPa范围不同的流体静压力下测量了它们的相对介电常数,分别探讨了高聚物薄膜在室温常压和高压下离子电导率与介电常数的关系。实验结果证实:添加介电常数较高及本体粘度较低的增塑剂C_4H_6O_3后,当其相对浓度npc/n_c=20％时,不仅该薄膜的室温常压离子电导率明显提高6.8倍,而且其压力下的离子电导率也提高1(0.1—100MPa)至2(350—800 关键词：     

LB薄膜的线性电光效应

本文用电光微分表面等离子激元光谱研究芪盐单分子层LB薄膜在不同光波长处(488nm,633nm和832nm)的电光响应.指出这是一种十分有效,简便的评估厚度小于100nm超薄膜非线性光学特性的实验技术.     

Effect of Bias on Content of GeC in Ge1-xCx Films

Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed.     

Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films

Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride （AlN） piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79. 7.     

第一讲 高温超导薄膜及微波器件应用

介绍了高温超导薄膜制备方法研究的进展和现状，对薄膜生长的一些技术，如外延生长高质量的薄膜对基片的要求，常用的基片，为了减小像硅和蓝宝石一类的重要基片与高温超导薄膜间的扩散以及改善晶格匹配采用的缓冲层技术等也作了简要的介绍，还介绍了薄膜的微波性质和用高温超导薄膜制血的微波无源器件。     

A New Method for Preparing Superconducting MgB2 Films from Diborane

We report on a new preparation method for magnesium diboride (MgB2) films by chemical vapour deposition (CVD) from diborane (B2H6).It is two-step ex situ approach,with the precursor boron films grown by CVD from B2H6 at 460℃,followed by a post-annealing process in magnesium (Mg) vapour at 830℃.The prepared MgB2 thin films on Al2O3 polycrystalline substrates have an onset transition temperature of 35K and a zeroresistance temperature of about 24K.Well-crystallized MgB2 grains have clearly been observed in the SEM images and confirmed by x-ray diffraction analysis.The advantages of the proposed method are the feasibility to prepare large-area superconducting films and the compatibility with semiconductor technology.     

Polarization Fatigue in Ferroelectric Thin Films

The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles.The temperature,dielectric permittivity,voltage bias,frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model.The results are in agreement with the recent experiments.