X射线W/B4C宽带多层膜的优化设计和制备

介绍了X射线宽带多层膜材料W和B4C的选定方法,依据伯宁(BERNING)公式确定出了在0.154 nm处X射线宽带多层膜的最佳膜对数。引入适当的评价函数,利用具有全局寻优特性且效率较高的遗传算法,在波长0.154 nm处优化设计出了掠入射角(θ)0.5°~0.9°范围内反射率值达到40%的宽角度宽带多层膜。宽带多层膜反射镜采用磁控溅射方法制备,并用X射线衍射仪对样品进行了检测,结果表明在掠入射角(2θ)1.0°~1.8°之间的相对反射率光谱曲线比较平坦。     

超声处理对ZnO薄膜光致发光特性的影响

对于结晶状态好的ZnO薄膜，测量了其光致发光(PL)光谱，发射光谱中只发现了峰值波长约389 nm的近紫外光.样品进行超声处理后，发射谱中不仅观察到近紫外峰，又观察到波长约508 nm的绿光峰.绿光峰的强度比近紫外光的强度强得多，且近紫外峰红移.进一步的热处理使绿光峰大大增强.超声处理改变了ZnO薄膜的质量和结晶状态，使晶格中产生氧空位.处理过程中的热效应使得薄膜晶格振动加剧.当晶格振动加剧到一定程度，晶格中的氧脱离格点形成氧空位.510 nm左右的绿色发光峰是ZnO晶体中的氧空位产生的.薄膜的温度越高， 关键词： ZnO薄膜 超声 光致发光     

激光敌我识别系统中滤光膜的研制

根据激光敌我识别系统的使用要求,选择H4和SiO2作为高低折射率材料,借助Macleod和TFCalc软件进行膜系优化设计和分析。采用电子束真空镀膜的方法并加以离子辅助沉积技术,通过正交矩阵实验对材料的工艺参数进行调整和优化,利用基片的正反面分别对带通滤光片的长波反射带和短波反射带进行展宽,解决了单面膜层过厚难以控制的问题,制备了符合要求的激光滤光膜。镀膜后的基片在532,632,905,1064和1550nm波长处的透射率小于0.2%,808nm波长附近的平均透射率大于95%。并在532nm和1064nm波长处具有较高的激光损伤阈值,能承受恶劣的环境测试,满足激光敌我识别系统中光学仪器的使用要求。     

Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide

The effect of annealing condition on sputtered indium tin oxide （ITO） films on quartz with the thickness of 200 nm is characterized to show enhanced optical transparency and optimized electrical contact resistivity. The as-deposited grown ITO film exhibits only 65% and 80% transmittance at 532 and 632.8 nm, respectively. After annealing at 475 ℃ for 15 min, the ITO film is refined to show improved transmittance at shorter wavelength region. The transmittances of 88.1% at 532 nm and 90.4% at 632.8 nm can be obtained. The 325-nm transmittance of the post-annealed ITO film is greatly increased from 12.7% to 41.9%. Optimized electrical property can be obtained when annealing below 450 ℃, leading to a minimum sheet resistance of 26 Ω/square. Such an ITO film with enhanced ultraviolet （UV） transmittance has become an alternative candidate for applications in current UV photonic devices. The morphology and conductance of the as-deposited and annealed ITO films are determined by using an atomic force microscopy （AFM）, showing a great change on the uniformity distribution with finite improvement on the surface conductance of the ITO film after annealing.     

单纤双向WDM滤光片的研制

随着光纤接入网的发展 ,对光纤器件的价格、性能等方面提出了更严格的要求。尤其是当光纤线路紧张时 ,需要进行单纤双向传输。滤光片是关键元件 ,它分别要求 1310nm透过时要大于 98%、15 5 0nm反射时要大于 95 %以上 ,或者 1310nm反射时大于 95 %、15 5 0nm透过时大于 98%以上 ,并且带宽为± 40nm。由于滤光片尺寸较小 ,必须切割划片 ,所以对膜层的牢固度有很高的要求。经过膜系优化和大量的工艺实验 ,提供的样品完全满足用户的要求 ,现已定型批量生产。     

Photoluminescence and electroluminescence studies of polyvinyl carbazole films

Polyvinyl carbazole (PVK) film has been prepared by solution method. Its absorption, photoluminescence (PL) and electroluminescence (EL) have been studied. For PL and absorption studies, film of PVK was prepared by spreading PVK solution on clean glass plate. The dried film was taken out of the glass plate and used for absorption, thickness measurement and PL studies. The film is transparent in the visible region and absorption starts at 340 nm wavelength. The absorption peaks are obtained at 280, 250 and 220 nm, indicating that optical gap of film is 3.65 eV and molecular orbitals exist at 4.43, 4.96 and 5.64 eV. PL studies reveal that excitation by violet light gives luminescence at 430, 480 and 690 nm. For EL studies, cell is prepared by depositing PVK film on a portion of conducting glass plate and taking aluminum foil as second electrode. It is observed from the characteristics that the current varies linearly, where as EL intensity varies non-linearly with increasing voltage. Higher brightness has been observed at higher frequencies. EL spectrum shows a sharp peak at 400 nm and a broad and less intense peak at 700 nm, which are attributed to radiative decay of singlet exciton and defect centers, respectively.     

偶氮接枝的聚氨酯薄膜作为光存储介质的实验研究

利用旋涂法，通过接枝共聚方法制备具有偶氮侧基的聚氨酯高分子聚合物薄膜。利用二倍频YAG激光(532nm)作为激发光，白光光源作为参考光，在室温下测试了该薄膜在激发光作用前后的吸收光谱，发现该薄膜在430一530nm内有较强的吸收。最后给出激发光强度的增大和撤去激发光后，随着无光照时间的延长，380nm与520nm波长处吸收强度的变化趋势。     

Investigation of the SiO<Subscript>2</Subscript>(Co)/GaAs heterostructures using the surface scattering of synchrotron radiation

The giant injection magnetoresistive effect has been observed in a granulated Co/SiO₂ film on a semiconductor GaAs substrate in a narrow temperature range near T = 300 K. According to the existing theory, the nature of the effect is due to the structure and physical problems of the interface layer. The spatial distribution of cobalt nanoparticles in the bulk of the Co/SiO₂ granular film and at the granular film/semiconductor substrate (GF/SS) interface has been investigated by the reflectometry and small-angle scattering of synchrotron radiation in the grazing geometry. It has been shown that the characteristic average distance between the cobalt granules in the bulk of the film is 7.3 nm. At the same time, the average distance between the granules with a vertical size of about 7.5 nm at the GF/SS interface is 32 nm. The experimental data indicate the low concentration of cobalt at the interface and the point character of the contact of the main bulk of the Co/SiO₂ film with the GaAs substrate through a relatively diluted layer of ferromagnetic cobalt granules.     

Y2O3:Bi,Yb减反转光薄膜的制备及其性能研究

采用脉冲激光沉积(PLD)方法在湿法腐蚀后的Si(100)衬底上制备了Y₂O₃:Bi,Yb减反转光薄膜。所制备的薄膜在300~800 nm波长范围内的平均反射率最低至5.28%,同时在晶体硅太阳能电池最佳响应范围内的980 nm附近表现出了良好的下转光特性。与非减反下转光薄膜相比较,具有减反结构的Y₂O₃:Bi,Yb下转换薄膜的转光强度有了明显的提升。随着衬底腐蚀时间在一定范围内的延长,Bi³⁺和Yb³⁺的发射峰强度线性增大。该减反转光薄膜为太阳能电池效率提高提供了一种简单可行的方法。     

Plasmonic Fraunhofer-wavelength narrow-band filter based on calcium film

We theoretically investigate plasmonic properties of a calcium film in a Kretschmann excitation scheme. Based on surface plasmon polaritons, the absorbance of the calcium film can be as high as 100% for the p-polarization, much higher than the absorbance for the s-polarization at the wavelength of 422.7 nm, correspondingly to the g Fraunhofer line. The 45 nm thick film of calcium has a high reflectance of about 76% at 422.7 nm for s-polarization. But for p-polarization, there is a minimum in the reflectivity curves at the angle of 19°. The narrow-band filter based on calcium film is particularly suited for working with conventional calcium atomic filter and on-chip integration due to its solid-state bulky feature. Furthermore, the plasmonic filter based on the calcium film is described that may offers new applications in angle- and polarization-sensitive sensor and the detection of weak laser light.     

Initial growth stages of manganese films on the Si(100)2 × 1 surface

Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ～0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.     

Sol-Gel Derived Thin Films of LiTaO3 on SiO2/Si Substrates for Optical Waveguide Applications

Thin films of lithium tantalate have been derived on SiO₂/Si substrate by sol-gel method. The sol is prepared by mixing LiOC₂H₅ and Ta(OC₂H₅)₅. The film is deposited by spincoating and annealing at 600°C. The film is characterized by means of X-ray diffraction, atomic force microscopy,and the m-line technique.The experimental results show that the film has crystallized into the pure trigonal phase and it is microsopically continuous and uniform. The crystalline size ranges from about 33nm to 96nm. The refractive index of the film is measured to be 1.84 at the wavelength of 633nm and the film is found to support several guiding modes at this wavelength.     

Thermal and Optical Properties of Cyanine Dye for High Density Digital Versatile Disc-Recordable (DVD-R)

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基于WO3- Pd复合膜的D型光纤光栅氢气传感器

采用磁控溅射方法在侧边抛磨的光纤光栅（D型光纤光栅）上溅射40 nm WO3-Pd复合薄膜,制作了D型光纤光栅氢气传感器.40 nm WO3-Pd复合薄膜是由5 nm的WO3、5 nm的WO3/Pd混合膜和30 nm的Pd 薄膜组成.实验中,首先采用射频溅射技术向D型光纤光栅溅射5 nm WO3薄膜,再利用共溅射技术溅射5 nm WO3/Pd混合膜,最后用直流溅射技术溅射30 nm的Pd薄膜.SEM结果显示在多次通氢气后WO3-Pd薄膜仍然具有较好的表面形貌,这说明WO3-Pd复合薄膜具有较好的机械性能.实验结果表明:该氢气传感器具有较好的重复性,同镀有同样氢气敏感膜的普通FBG相比,D型光纤光栅的灵敏度提高了200%|在氢气体积浓度为6%时,D型光纤光栅传感器的波长变化为15pm.     

Leuco crystal violet/poly(vinyl butyral) thin film as a high-dose dosimeter

A polyvinyl butyral film incorporating a radiochromic leuco crystal violet dye (LCV) and a UV-absorber of tinuvin-P has been investigated as a high-dose dosimetry for ⁶⁰Co radiation processing in the dose range of 1–100 kGy. Upon γ-ray exposure, the prepared film undergoes visual color change to deep purple color characterized with an absorption band peaking at 594 nm with a shoulder around 552 nm. The response of films stored in dark place at room temperature overall a period of 55 days exhibited good stability, that the increase in response of irradiated and unirradiated films did not exceed 2% and 4%, respectively overall this storage period. The results indicate that no further protection of films from laboratory fluorescent light during the measurement of irradiated film is required. The effect of temperature and relative humidity on the performance of film during irradiation and the overall uncertainty associated with absorbed dose monitoring were investigated in the present study.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.     

A comparison of FePt thin films with HfO2 or MnO additive

The influence of oxide additives on the magnetic and structural properties of FePt L1₀ thin films has been studied. FePt films with HfO₂ additive grown on a 5 nm MgO buffer showed a primarily random texture for both as-deposited and annealed samples. The average grain size was limited to 10 nm and the perpendicular coercivity was 1.3 kOe for a 10 nm thick FePt +20% HfO₂ film annealed at 650°C for 10 min. In direct contrast, MnO additive neither limited grain size nor L1₀ ordering in annealed FePt films. A 10 nm thick FePt+20% MnO film grown on a 5 nm MgO buffer showed a unique discontinuous microstructure composed of clusters of (0 0 1) textured L1₀ grains after being annealed at 650°C for 10 min. The average size of the grains making up these clusters was 50 nm and the perpendicular coercivity of the film exceeded 7 kOe.     

Effect of annealing in an external magnetic field on the microstructure and magnetic properties of the Fe/FePt/Pt multilayer system

The effect of annealing in an external magnetic field applied perpendicular to the plane of the film on the kinetics of Ll ₀ phase transformation of the microstructure and the magnetic properties of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system has been investigated. The relations between the hysteresis loop shape, magnetic correlation length, and structural disorders, which are characteristic of magnetic information carriers, have been analyzed. It has been found that the annealing of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system at a temperature of 470°C in an external magnetic field of 3500 Oe, which is applied perpendicular to the film plane, leads to the formation of a face-centered tetragonal structure of the Ll ₀ phase in the FePt film, which is characterized by the high coercivity H _c , the (001) preferred texture, the magnetic anisotropy perpendicular to the film plane, small sizes of FePt grains in the film, and weak exchange coupling between the particles. The energy of the external magnetic field encourages the process of transformation of the FePt film into the Ll ₀ phase. Thus, a method has been developed for fabricating multilayer films based on the FePt Ll ₀ phase with the parameters necessary for information carrier materials with perpendicular-type magnetic recording.     

白光干涉测量超薄透明电极ITO薄膜的厚度

随着平板显示技术的发展,透明电极ITO膜的厚度越来越薄。为了测试这种极薄的ITO膜,本文通过改进已有的频域分析算法,以便测试膜厚在20~150 nm之间的ITO膜。与现有算法相比,该算法有效改进了各个波长的位相解析精度。实验结果表明,待测透明电极薄膜的厚度为90~104 nm,其结果和标定值一致,证明了该算法能够测量膜厚小于100 nm的透明电极ITO薄膜。     

The kinetics of the formation of a solid solution in an Ag–Pd polycrystalline film system

The kinetics of homogenization of an Ag–Pd film system with a total thickness of 120 nm and a grain size of 5–10 nm has been studied by means of in situ TEM heating. The film system has been formed by the sequential deposition of components in a vacuum on the substrate at room temperature. It has been shown that diffusion processes are activated, starting from the temperature 453 K, resulting in complete homogenization of the film system at 573 K with preservation of its fine-grained structure. The effective diffusion coefficient in the Ag–Pd system was measured as 10^?17–10^?18 m²/s at 553 K. A possible mechanism of homogenization is discussed.