碲锌镉面元辐射探测器堆积载流子屏蔽效应

 采用铑(Rh)靶45 kV X射线源进行了碲锌镉(CdZnTe)面元像素阵列探测器成像实验。实验结果表明：在探测距离1 mm,管电压45 kV条件下,管电流增大至20 μA时,辐照中心区域像素单元信号丢失,出现围绕辐照中心区域的边缘高事件计数环形探测图像。随着管电流的增大,无响应像素区域扩大,探测器总体事件计数明显降低。进一步根据泊松方程建立了CdZnTe晶体内部电势分布模型,仿真结果表明：单位面积光子通量为5×10⁵ mm^-2·s^-1时,由于CdZnTe晶体较低的空穴迁移率,晶体内部存在堆积空穴载流子形成的高空间电荷密度分布区域。晶体内部电场产生扭曲,电子载流子无法迁移至对应阳极位置,导致辐照中心区域产生信号屏蔽效应。     

基于CdZnTe像素阵列探测技术的伽玛源成像

根据高能射线针孔成像理论,采用CdZnTe像素阵列探测器建立了直接成像探测模式的伽玛源针孔探测系统。测试分析了CdZnTe像素阵列探测器的能量分辨力及峰值效率,讨论研究了针孔成像探测系统的调制传递函数和附加噪声特性,测试获得直径5mm137Cs源的探测图像,采用Lucy-Richardson迭代算法得到了137Cs源的复原图像。实验结果表明:CdZnTe探测器对662keV137Cs源的能量分辨力为6.25%～7.50%,峰值效率65.0%～72.5%;成像系统探测图像存在一定扩散现象,所采用的Lucy-Richardson迭代复原算法能较好地修正图像扩散,提高探测图像中心区域细节分辨力;估算所得137Cs源尺寸误差约0.5mm,所建立的CdZnTe针孔成像探测系统能有效得到小尺寸伽玛源的辐照强度分布及尺寸信息。     

Intensifying process of polarization effect within pixellated CdZnTe detectors for X-ray imaging

The intensifying process of polarization effect at room temperature in a pixellated Cadmium zinc telluride (CdZnTe) monolithic detector is studied. The process is attributed to the increase in build up space charges in the CdZnTe crystal, which causes an expansion of the space charge region under the irradiated area. The simulations of electric potential distributions indicate that the distorted electric potential due to the high X-ray flux is significantly changed and even deteriorated due to increasing space charges within the irradiated volume. An agreement between the space charge distribution and electric potential is discussed.     

Investigation of a CPG‐array CdZnTe γ‐ray imaging detector with single collecting electrodes readout

The single‐electrode readout method has been applied to a coplanar grid (CPG) array CdZnTe detector in order to halve the number of preamplifiers previously needed and to facilitate imaging applications of CPG detectors. A method of predetermining the width of the optimum collecting electrodes has also been proposed, using the calculated optimum relative gain factor G. Meanwhile, a detailed process for calculating the charge induction efficiency (CIE) is presented. To simplify the calculation process, the computational formula of the CIE was deduced through the integration of the weighting potential. For performance evaluation, a 2 × 2 CPG‐array CdZnTe detector was elaborately designed and tested with ¹³⁷Cs at 662 keV. Experimental results showed the capability of using the CPG‐array CdZnTe detector with single collecting electrode readout for γ‐ray imaging applications, with the same complexity of associated readout electronics as that of the pixelated CdZnTe detectors.     

不同厚度像素CdZnTe探测器的性能测试和评估

碲锌镉材料(CdZnTe)是目前探测X射线和γ射线的最好材料之一。将241 Am和137 Cs辐射源作用于像素CdZnTe探测器,通过实验和仿真分别得到能量谱估计、能量分辨率和峰值效率。由实验和仿真结果得出:在662keV的高能量下,厚度较大的CdZnTe探测器可获得更高的能量分辨率和峰值效率,但在59.5keV低能处会出现拖尾升高和电荷损失的现象;厚度较薄的探测器在低能处的特性反而更好。     

CdZnTe像素阵列探测器成像评价模型及实验

考虑载流子陷获效应建立了碲锌镉(CdZnTe)像素阵列探测器感应电荷分布模型,并从非平衡载流子连续方程出发,推导了晶体内部陷获载流子数密度分布,得到了CdZnTe探测器成像调制传递函数评价模型。数值计算结果表明:随入射光子能量的增加,探测器成像质量明显下降;当电子载流子与空穴载流子迁移寿命积范围分别为0.510-3 to 5.010-3 cm2/V,2.010-5 to 7.510-5 cm2/V时,电子载流子感应信号是探测器响应信号的主要来源,而空穴迁移寿命积变化对探测器成像性能的影响有限,所建立模型的载流子收集特性与实际探测器载流子收集特性相符。搭建了40 mm40 mm的CdZnTe成像探测系统,探测并获得了系统预采样调制传递函数。实验结果表明:模型理论值与实验数据相符合,实际CdZnTe晶体中存在的固有深能级缺陷、实验所采用的非单色性X射线源及较大的实际像素间隙是造成理论值与实验结果存在一定偏差的主要原因。     

脉冲激光作用下铝靶的层裂

 本文报导波长为1.06 μm脉宽（FWHM）约4 ns的强脉冲激光辐照下，铝靶发生层裂的实验结果。当入射功率密度在2.0×10¹¹~5×10¹¹ W/cm²范围的激光束作用下，厚度为0.1 mm、0.2 mm的靶在超临界条件下发生层裂，层裂厚度分别在(17±6) μm及(35±5) μm范围。文中使用一种简化模型对阈值条件下不同厚度的靶发生层裂时的层裂片厚度作了近似估算，并与已有的实验结果较好地符合。     

高剂量X射线辐照下碲锌镉探测器的深度极化效应

采用双向辐照的方法研究了碲锌镉晶体中的深度极化效应,实验结果表明,深度极化效应与直接辐照的X射线剂量无关。通过对晶体内电场分布的模拟,进一步分析了深度极化的形成机制,认为深度极化效应与极化效应一样,都是由于高浓度的堆积电荷使得晶体内电势畸变从而阳极不能收集信号,但它与通常极化效应有所不同,造成这种极化的高浓度空间电荷是从更高浓度的空间电荷区扩散而来的,发生深度极化的区域本身并没有受到X射线的强烈辐照。     

A Prototype of X-Ray Imaging Based on the GEM Detector

A prototype of X-ray imaging device based on triple Gas Electron Multiply detector is studied,which has an effective gain up to 10⁵ and can be used in high rate X-rays imaging.The precise method of micro–strip readout is designed for X-rays localization, and the crate controller of high–speed SCSI interface is applied for the data acquisition.The test results show that the position resolution of measurement system is less than 90μm and the stability of its effective gain is better than 1% under the X-ray flux of 10⁵Hz/mm².     

Schottky-type polycrystalline CdZnTe X-ray detectors

The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 10⁹ Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm²) at 40 V due to its high barrier height (ϕ_b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.     

Estimation of Plasma Density by Surface Plasmons for Surface-Wave Plasmas

An estimation method of plasma density based on surface plasmons theory for surface-wave plasmas is proposed. The number of standing-wave is obtained directly from the discharge image, and the propagation constant is calculated with the trim size of the apparatus in this method, then plasma density can be determined with the value of 9.1 × 10^17m^-3. Plasma density is measured using a Langmuir probe, the value is 8.1 × 10^17m^-3 which is very close to the predicted value of surface plasmons theory. Numerical simulation is used to check the number of standing-wave by the finite-difference time-domain （FDTD） method also. All results are compatible both of theoretical analysis and experimental measurement.     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

Artifact reduction in the CSPAD detectors used for LCLS experiments

The existence of noise and column‐wise artifacts in the CSPAD‐140K detector and in a module of the CSPAD‐2.3M large camera, respectively, is reported for the L730 and L867 experiments performed at the CXI Instrument at the Linac Coherent Light Source (LCLS), in low‐flux and low signal‐to‐noise ratio regime. Possible remedies are discussed and an additional step in the preprocessing of data is introduced, which consists of performing a median subtraction along the columns of the detector modules. Thus, we reduce the overall variation in the photon count distribution, lowering the mean false‐positive photon detection rate by about 4% (from 5.57 × 10^?5 to 5.32 × 10^?5 photon counts pixel^?1 frame^?1 in L867, cxi86715) and 7% (from 1.70 × 10^‐3 to 1.58 × 10^?3 photon counts pixel^?1 frame^?1 in L730, cxi73013), and the standard deviation in false‐positive photon count per shot by 15% and 35%, while not making our average photon detection threshold more stringent. Such improvements in detector noise reduction and artifact removal constitute a step forward in the development of flash X‐ray imaging techniques for high‐resolution, low‐signal and in serial nano‐crystallography experiments at X‐ray free‐electron laser facilities.     

Comment on `Electronic Properties of Red P-Type Tl2S5 Single Crystals'

Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Tl₂S₅ single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined thevalues of 2.66×10^-41kg and 2.50×10^-41kg, respectively, for the effective masses of electrons and holes in p-type Tl₂S₅, which are about ten orders of magnitude smaller than the free electron mass (9.11×10^-31kg). We argue that the anomalously small values obtained for the effective mass of chargecarriers in Tl₂S₅ have no physical significance.     

石油醚在流体静高压下的超声声速、衰减、密度和绝热压缩系数

 专门设计了用脉冲-回波-重合法在不同静水压下测量液体声速的装置，并对石油醚在0.1~650 MPa流体静压力范围内测量了其超声声速和衰减系数。还通过测量体积压缩量和质量得到石油醚密度ρ随流体静压力的变化。最后，给出了石油醚的绝热压缩系数β与流体静压力的关系。     

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D＊ is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.     

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

Anode floating voltage is predicted and investigated for silicon drift detectors （SDDs） with an active area of 5 mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage （-50 V） of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p＋ inner ring and the n＋ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.     

Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

Hydrogen ions are implanted into Pb（Zro.3Tio.7）03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffrac- tion patterns show the film structures before and after H＋ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage cur- rent nearly in one order for the implanted film, but the current at time shorter than i s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H＋ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.     

Three-Step Growth Optimization of AlN Epilayers by MOCVD

A three-step growth process is developed for depositing high-quality aluminium-nitride （AlN） epilayers on （001） sapphire by low pressure metalorganic chemical vapour deposition （LP-MOCVD）. We adopt a low temperature （LT） A1N nucleation layer （NL）, and two high temperature （HT） A1N layers with different V/Ⅲ ratios. Our results reveal that the optimal NL temperature is 840-880℃, and there exists a proper growth switching from low to high V/Ⅲ ratio for further reducing threading dislocations （TDs）. The screw-type TD density of the optimized AIN film is just 7.86×10^6 cm^-2, about three orders lower than its edge-type one of 2×10^9 cm^-2 estimated by high-resolution x-ray diffraction （HRXRD） and cross-sectional transmission electron microscopy （TEM）.     

Observation of E×B Flow Velocity Profile Change Using Doppler Reflectometry in HL-2A

A broadband, O-mode sweeping Doppler reflectometry designed for measuring plasma E×B flow velocity profiles is operated in HL-2A. The main feature of the Doppler reflectometry is its capability to be tuned to any selected frequency in total waveband from 26-40 GHz. This property enables us to probe several plasma layers within a short time interval during a discharge, permitting the characterization of the radial distribution of plasma fluctuations. The system allows us to extract important information about the velocity change layer, namely its spatial localization. In purely Ohmic discharge a change of the E×B flow velocity profiles has been observed in the region for 28 〈 r 〈 30cm if only the line average density exceeds 2.2×10^19 m^-3. The density gradient change is measured in the same region, too.