Three-Step Growth Optimization of AlN Epilayers by MOCVD |
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| Authors: | PENG Ming-Zeng GUO Li-Wei ZHANG Jie YU Nai-Sen ZHU Xue-Liang YANJian-Feng GE Bin-Hui JIA Hai-Qiang CHEN Hong ZHOU Jun-Ming |
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| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Abstract: | A three-step growth process is developed for depositing high-quality aluminium-nitride (AlN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AlN nucleation layer (NL), and two high temperature (HT) AlN layers with different V/III ratios. Our results reveal that the optimal NL temperature is 840--880°C, and there exists a proper growth switching from low to high V/III ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AlN film is just 7.86×106cm-2, aboutthree orders lower than its edge-type one of 2×109cm-2 estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electronmicroscopy (TEM). |
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| Keywords: | 81 05 Ea 81 15 Gh 61 10 -i 68 37 Lp |
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