Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate

The influence of the LT-AlN(NL) growth times on the mosaic structure parameters of the AlN layer grown on the LT-AlN(NL)/6H-SiC structures as well as the dislocation densities and the strain behaviours in the AlN epilayers has been investigated using XRD measurements. The growth times of the LT-AlN(NL) were changed to 0, 60, 120, 180, and 240?s. We observed that the mosaic structure parameters of the AlN epilayers were slightly affected by the LT-AlN(NL) growth times. However, the dislocation densities in the AlN layer are affected by the growth times of the LT-AlN(NL) layer. The highest edge dislocation density (5.48?×?10¹⁰?±?2.3?×?10⁹?cm^?2) was measured for the sample in which 120?s grown LT-AlN(NL) was used. On the other hand, highest screw type dislocation density (1.21?×?10¹⁰?±?1.7?×?10⁹?cm^?2) measured in the sample E that contains 240?s growth LT-AlN(NL). The strain calculation results show that the samples without LT-AlN(NL) suffered maximum compressive in-plane strain (?10.9?×?10^?3?±?1.8?×?10^?4), which can be suppressed by increasing the LT-AlN(NL) growth times. The out-of-plane strain also has a compressive character and its values increase with LT-AlN(NL) growth times between 60 and 180?s. Same out-of-plane strain values were measured for the LT-AlN(NL) growth times of 180 and 240?s. Furthermore, the form of the biaxial stress in the AlN epilayer changed from compressive to tensile when the LT-AlN(NL) growth times were greater than 120?s.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D＊ is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

高电子迁移率晶格匹配InAlN/GaN材料研究

文章基于蓝宝石衬底采用脉冲金属有机物化学气相淀积(MOCVD)法生长的高迁移率InAlN/GaN材料,其霍尔迁移率在室温和77 K下分别达到949和2032 cm²/Vs,材料中形成了二维电子气(2DEG). 进一步引入1.2 nm的AlN界面插入层形成InAlN/AlN/GaN结构,则霍尔迁移率在室温和77 K下分别上升到1437和5308 cm²/Vs. 分析样品的X射线衍射、原子力显微镜测试结果以及脉冲MOCVD生长方法的特点,发现InAlN/GaN材料的结晶质量较高,与GaN晶格匹配的InAlN材料具有平滑的表面和界面. InAlN/GaN和InAlN/AlN/GaN材料形成高迁移率特性的主要原因归结为形成了密度相对较低(1.6×10¹³-1.8×10¹³ cm^-2)的2DEG,高质量的InAlN晶体降低了组分不均匀分布引起的合金无序散射,以及2DEG所在界面的粗糙度较小,削弱了界面粗糙度散射. 关键词： InAlN/GaN 脉冲金属有机物化学气相淀积 二维电子气 迁移率     

Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.     

Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.     

AlGaN/AlN/GaN结构中二维电子气的输运特性

对使用金属有机物汽相沉积法生长的AlGaN/AlN/GaN结构进行的变温霍尔测量，测量结果指出在AlN/GaN界面处有二维电子气存在且迁移率和浓度在2K时分别达到了1.4×10⁴cm²·V^-1·s^-1和9.3×10¹²cm^-2，且在200K到2K范围内二维电子气的浓度基本不变，变磁场霍尔测量发现只有一种载流子(电子)参与导电.在2K温度下，观察到量子霍尔效应，Shubnikov-de Haas (SdH) 振荡在磁场约为3T时出现，证明了此结构呈现了典型的二维电子气行为.通过实验数据对二维电子气散射过程的半定量分析，推出量子散射时间为0.23ps，比以往报道的AlGaN/GaN结构中的散射时间长，说明引入AlN层可以有效减小合金散射，进一步的推断分析发现低温下以小角度散射占主导地位.     

Demonstration of Mo Soft X-Ray Lasers with a Grazing Incidence Pumping Scheme in the XL-II Facility

A Ni-like Mo soft x-ray laser （SXRLs） operating at 18.9nm has been demonstrated by employing a grazing incidence pumping scheme with 120m^3 in the 200ps pre-pulse and 140mJ in the 200fs main pulse. The SXRL gain is estimated to be 1.5-3cm^-1 when a grazing incidence angle of 14° is applied. Numerical simulations are also performed to investigate the dynamics of the ion distribution. It is found that a high intensity at 2.4× 10^14 W/cm^2 of the 200fs main pulse could heat the pre-plasma rapidly to an appropriate temperature for population inversion, and could compensate for the shortage of the total pump energy to a certain extent.     

Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

Controlled evolution of silicon nanocone arrays induced by Ar^＋ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60 nm, 250-300 nm and 750-800 nm to 1500 nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 10^9- 2 × 10^9 cm^-2.     

Effects of Proton Irradiation on a CMOS Image Sensor

We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor （CMOS） image sensor at doses from 1 × 10^9 to 4 × 10^10 cm^-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1 × 10^10 cm^-2. The captured colour images become very blurry at 4 × 10^10 cm^-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.     

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

Stacked ruthenium （Ru） nanocrystals （NCs） are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density （3 × 10^12 cm-2）, small size （2 4nm） and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs.     

Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.     

Charge Transport and Magnetotransport Properties of Polyimide Irradiated by 80keV Co Ions

Charge transport properties of polyimide films implanted with 80 keV Co ions at two different fluences （series I： 1.25 × 10^17 ions/cm^2, series Ⅱ： 1.75 × 10^17 ions/cm^2） are studied in detail. For series I, the temperature dependence of surface resistivity fits Mott＇s equation very well. It is on the insulating side of the insulator-metal transition （IMT）. However, for series Ⅱ, the temperature dependence of surface resistivity is not in agreement with Mott＇s equation. It is on the metallic side of lMT. The magnetotransport properties of these two series are also studied. No significant magnetoresistive effect is observed for series I at both 5 K and 300 K. For series Ⅱ, an obvious magnetoresistive effect is observed at 5 K, while there is no magnetoresistive effect at 300 K. Rutherford backscattering spectrometry （RBS） is applied to confirm the actual fluence for these two series.     

PDC材料烧结过程中钴在金刚石层中的扩散熔渗迁移机制

 讨论了PDC材料烧结过程中钴在金刚石层中的固相扩散、钴液熔渗、两次钴高浓度峰的“波浪”式迁移过程中的运动规律及其作用机制,并根据实验观测的数据进行了有关计算。结果表明：在5.8 GPa、1 300 ℃条件下,钴的扩散系数D≈1.6×10^-7 cm²/s,是一般常压及相同温度条件下钴固相扩散系数（3×10^-10 cm²/s）和相同压力条件下钴的液相扩散系数（5×10^-5 cm²/s）的中间值;对于粒度W≥10 μm的金刚石烧结体系,钴液熔渗作用时间非常短暂,略大于0.5 s,而对于W≤1 μm的超细金刚石烧结体系而言,钴熔渗作用时间为28 s,比粒度W≥10 μm的金刚石烧结要长得多;两次钴高浓度峰的迁移速度分别约为50 μm/s和100 μm/s。     

Photoinduced Birefringence and Broadband All-Optical Photonic Switch in a Bacteriorhodopsin/Polymer Composite Film

Photoinduced birefringence with large optical nonlinearity in a bacteriorhodopsin/polymer composite film is observed. A high refractive index change of 8.5×10^-5 photoinduced by 476nm pumping beam is reached at the low intensity of 6.5mW/cm². Based on it, a broadband all-optical photonicswitch is realized with an optical controlling switch system. Because of controlling beam's selectivity in switching, the transporting beams of different wavelengths with different intensities and shapes can be modulated by adjusting the wavelength and intensity of the controlling beam.     

氧化镍（绿镍矿）等温压缩及高压相变研究

 本文采用DAC（金刚石压砧高压腔）装置，对氧化镍进行了静水压、非静水压、电导率测量等系统高压实验，获取了氧化镍等温压缩、高压相变及电导率压力效应的新结果，并在实验数据的基础上，对其高压相变与电性及磁性变化关系及体弹性模量作了分析讨论。     

Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure, which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface. While the carrier concentration reaches 1.32 × 10¹³ cm ^{- 2} and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 10⁴ cm²/(V·s) at 2 K. The Shubnikov—de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEG is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.     

Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.