Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

Notes应用程序中角色组合的最少策略

在Ｎｏｔｅｓ 应用程序设计过程中,角色的分配合一直是一个容易被忽略的问题．本文将此问题提炼为一个数学模型,并用图论中已有的顶点染色法解决,得出了较为合理的算法和结果．     

非视域成像中的中介面散射特性与成像仿真

中介面与目标表面光学散射特性对成像结果有直接影响,目前各种非视域成像方法多针对朗伯体中介面进行计算成像,系统结构复杂且成本昂贵。然而,应用场景中的常见材料均为非朗伯体,故基于中介面材料的双向反射分布理论,提出了一种材料散射特性描述方法。通过设置中介面中所包含的不同散射成分,经过大量光线追迹,实现了对非视域目标光强信号的追踪与仿真。仿真成像结果采用标准差进行评价,通过多因素方差分析,定量讨论了不同散射成分组合与非视域成像质量之间的关系。分析结果表明,材料中高斯散射角对非视域成像质量有显著影响。     

近红外单光子探测器

该单光子探测器在实验中使用半导体制冷器制冷，雪崩二极管工作于盖革模式下，使用交流耦合方式提供门脉冲信号，通过延迟补偿和采样门控消除尖脉冲干扰，采用反馈门控减小后脉冲影响，优化电路参数减小暗计数.经实验测试与分析，温度在-62.5℃，门脉冲宽度为50ns，采样门控为10ns的条件下，最佳工作点的暗计数率小于4×10^-6ns^-1，量子效率约18%，噪声等效功率为2.4×10^-19W/Hz^1/2.     

强度涨落在热光鬼成像中的作用

热光鬼成像的图像质量在实际应用中具有重要作用. 通过理论分析和数值模拟, 发现光场的强度涨落程度会影响热光鬼成像的对比度, 基于此, 提出可以通过调节热光场的平均强度和强度波动的方差来提高成像对比度, 并且研究了这一方法对成像信噪比的影响. 将这种方法与另一种提高成像对比度的方法——高阶鬼成像进行了对比, 所得结果将有助于提高对热光鬼成像的理解. 关键词： 鬼成像 强度涨落 对比度 信噪比     

Detection efficiency characteristics of free-running In Ga As/In P single photon detector using passive quenching active reset IC

In Ga As/In P avalanche photodiodes(APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector's afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector's performance is consistent with gated operation.     

Visibility enhancement in two-dimensional lensless ghost imaging with true thermal light

We report an experimental demonstration of two-dimensional(2D) lensless ghost imaging with true thermal light. An electrodeless discharge lamp with a higher light intensity than the hollow cathode lamp used before is employed as a light source. The main problem encountered by the 2D lensless ghost imaging with true thermal light is that its coherence time is much shorter than the resolution time of the detection system. To overcome this difficulty we derive a method based on the relationship between the true and measured values of the second-order optical intensity correlation, by which means the visibility of the ghost image can be dramatically enhanced. This method would also be suitable for ghost imaging with natural sunlight.     

锁相放大器的新进展

主要介绍了模拟锁相放大器和数字锁相放大器原理、特点、过渡和发展过程．通过数字锁相放大器的硬件的模块化结构、灵活的算法设计、软件的升级能力、应用的范围和特点以及性价比等，说明锁相放大器发展的前景和动力．     

交联聚丙烯酰胺溶液染色研究

采用显微镜研究了预交联聚合物凝胶溶液的染色过程,结果表明由于静电作用,亚甲基蓝溶液中阳离子基团与凝胶颗粒中的阴离子基团相互作用形成一种深蓝色的缔合物;交联聚物线团也可以与亚甲基蓝分子形成深蓝色的缔合物,使交联聚合物线团显色,能够直接观测到交联聚合物线团在溶液中的形态。采用扫描电镜、动态光散射、流变仪和岩心封堵实验研究了染色后交联聚合物的线团形态尺寸和溶液的流变性、封堵特性。结果表明,染色后的交联聚合物线团仍是几百纳米左右的在水中分散的球形体,在形态和尺寸上与未染色的交联聚合物溶液没有发生较大的变化;染色后交联聚合物溶液在一定剪切速率范围内表现为胀流性和负触变性。     

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage(V_(ex)) when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V_(ex) is too low(0.2 V-0.8 V) or too high(3 V-4.2 V),the timing jitter is increased with the V_(ex),particularly at high V_(ex).While at middle V_(ex)(1 V-2.8 V),the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V_(ex) and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of ~2.08×10~(-5) per gate at the V_(ex) of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power(NEP) and the afterpulse probability(P_(ap)).It is found that both NEP and P_(ap) increase quickly when the V_(ex) is above 2.8 V.At ~2.8-V V_(ex),the NEP and P_(ap) are ~2.06×10~(16)W/Hz~(1/2) and 7.11%,respectively.Therefore,the detector should be operated with V_(ex) of 2.8 V to exploit the fast time response,low NEP and low P_(ap).