基于SiPM和TCMPC的时间分辨拉曼散射测量技术研究

报道了一种基于硅光电信增管(SiPM)的时间相关多光子计数(TCMPC)技术并将其应用于时间分辨拉曼散射测量。相比于常规基于光电倍增管(PMT)或单光子雪崩二极管(SPAD)的时间相关单光子(TCSPC)技术，由于SiPM可以分辨信号脉冲的具体光子数，基于SiPM的TCMPC技术消除了信号脉冲包含的光子数必须小于等于1的限制，光子计数效率提高了10倍以上，大大节省了测量时间。此外，多光子测量比单光子测量能够得到更好的时间分辨率，时间分辨拉曼散射系统的仪器响应函数(IRF)从单光子81.4 ps缩短至双光子59.7 ps，因而可以用更窄的时间门限抑制荧光本底等噪声对拉曼散射测量的影响。使用TCMPC技术测量CCl₄在0.5和1.5 p.e.两个不同光子数阈值的拉曼峰的峰本比，后者较高的光子数阈值能进一步降低SiPM暗计数噪声的影响，增加了拉曼信号测量的信噪比，测量得到的CCl₄ 459 cm-1拉曼峰的峰本比是前者的6.4倍。将所述新的拉曼散射测量技术与基于PMT和锁相放大器(LIA)的传统拉曼散射测量技术进行了比较研究，前者由于可以使用仅有数十皮秒的测量门限，可以有效抑制荧光、环境杂散光和SiPM暗计数等噪声的影响，所得光谱具有更好的峰本比，测得CCl₄的459 cm-1拉曼峰和Si的一阶拉曼峰的峰本比分别是后者的3.9倍和5.5倍。     

Preliminary results for the design,fabrication,and performance of a backside-illuminated avalanche drift detector

The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.     

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

Anode floating voltage is predicted and investigated for silicon drift detectors （SDDs） with an active area of 5 mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage （-50 V） of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p＋ inner ring and the n＋ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.     

高密度外延电阻淬灭硅光电倍增器研究

针对表面淬灭电阻技术引起死区面积较大,以及高光子探测效率与大动态范围不能同时满足的矛盾,应用外延电阻淬灭技术,采用与雪崩光电二极管微单元相连的衬底外延层硅材料制作了淬灭电阻.研制成功的外延电阻淬灭硅光电倍增器的有源区面积为1×1mm~2,微单元尺寸为7μm,微单元密度高达21 488个/mm~2,测试结果表明:漏电流为10量级,反向击穿电压为24.5V,过偏压为2.5V时,增益达1.4×10~5,室温下暗计数率约为600kHz/mm~2,串话率低于10%,说明该器件具有良好的光子计数特性.该高密度硅光电倍增器测量的动态范围是1.8×10~4个/mm,光子探测效率为16%(@λ_(peak)=480nm),恢复时间为8.5ns,单光子分辨能力较高,并且在液氮温度环境能够探测光子,这对于拓展硅光电倍增器在极低温度条件下的应用,比如暗物质测量实验方面具有潜力.     

高纯区熔单晶硅高增益光晶体管的研究

区熔单晶硅与直拉单晶硅以及其他半导体材料相比杂质含量少,少子寿命长,所以以区熔单晶硅为衬底制作的光晶体管在弱的光信号下仍然有高的增益,适宜于弱光探测.报道了以区熔单晶硅为衬底的光晶体管的实验结果.为了保持区熔高纯单晶硅内的少子寿命,背面淀积了一层掺磷多晶硅作为外吸杂层.已经测量得到对于实验中发射极直径为2mm的光晶体管在波长为0.83 μm的入射光照射下,光功率低至0.16 nW时,光晶体管的增益仍然高达4400.     

Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence （PL）. The ion implantation is performed at the energy of 120keV with the dose ranging from 1 × 10^11 to 1 × 10^14/cm^2. The rapid thermal annealing is performed at the temperature of 700℃ for 30s under pure nitrogen protection. The PL measurement shows that the band gap blueshift is influenced by the depth of ion implantation. The blueshift of the upper well which is closer to the implanted wcancies is enhanced with the ion dose faster than that from a lower well under the lower dose implantation （〈 5 × 10^11/cm^2）. When the ion dose is over 10^12/cm^2, the band gap blueshift from both the wells increases with the ion dose and finally the two peaks combine together as one peak, indicating that the ion implantation results in a total intermixing of both the quantum wells.