基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征

采用旋涂法预先在SiO₂衬底表面形成一层聚（4-乙烯基苯酚）（PVP）作为表面修饰层,以喷墨打印的6,13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS并五苯）作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管（OTFT）器件。作为对比,在未经过表面修饰的SiO₂衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO₂衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm²·V^-1·s^-1;而直接在SiO₂衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm²·V^-1·s^-1。     

不同表面修饰制备高性能柔性薄膜晶体管

分别采用六甲基二硅胺(HMDS,Hexamethyldisilazane)和聚苯乙烯/氯硅烷复合材料修饰聚乙烯基苯酚(PVP)绝缘层制备了底接触的有机薄膜晶体管并研究了其半导体层的表面形貌和器件的电学性能。原子力显微镜观察发现,并五苯半导体薄膜在不同的界面修饰上的生长形貌产生了很大变化。在PVP上沉积的并五苯晶粒尺寸都小于150 nm,经过聚苯乙烯/氯硅烷复合材料和HMDS处理后的PVP表面生长的并五苯晶粒尺寸则分别在200~400 nm和400~600 nm。大尺寸的晶粒能够减小器件沟道内的陷阱浓度,从而有效地提高电学性能。PVP绝缘层采用聚苯乙烯/氯硅烷和HMDS修饰后,与未修饰的器件相比迁移率分别提高了58倍和82倍。采用HMDS作为表面修饰层制备柔性OTFT,并五苯场效应晶体管的关态电流约为10-9A,电流的开关比超过104,最大场效应迁移率约可达0.338 cm2·V-1·s-1.     

低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制

研究了有机薄膜晶体管(OTFT)驱动顶发射有机发光二极管(OLED)的集成制备技术。通过减小栅绝缘层的厚度,达到降低OTFT工作电压的目的。OLED采用标准的绿光器件,利用超薄的Al薄膜作为半透明阴极实现顶发射功能。实现了低电压工作的OTFT与顶发射OLED的集成,其中OTFT的阈值电压为2.0 V,饱和场效应迁移率为0.40 cm2·V-1·s-1。基于实验数据,对集成像素的电特性进行了计算分析,在-5~-10 V的栅电压调控下,像素亮度能在50~250 cd/m2的范围内实现线性灰度调控。     

对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

通过扫描电镜和X射线衍射对SiO₂衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在SiO₂衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100nm,且薄膜有较好的结晶取向,呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm,绝缘层SiO₂的厚度为250nm,器件的沟道宽长比(W/关键词： 有机薄膜晶体管 并五苯薄膜 酞菁铜薄膜 μ_EF)')" href="#">场效应迁移率(μ_EF)     

不同绝缘层上生长的并五苯薄膜及其OTFT器件性能的研究

分别以SiO₂和PMMA为绝缘层材料制备了底栅顶接触结构的OTFT器件,得到以PMMA为绝缘层的器件具有更好的性能,其场效应迁移率为0.207 cm2·Vs-1,开关电流比为4.93×103,阈值电压为-4.3 V;而以SiO₂为绝缘层的器件,其场效应迁移率仅为0.039 cm2·Vs-1,开关电流比为5.98×102,阈值电压为-5.4 V。为分析器件性能差异的原因,测得了SiO₂和PMMA薄膜表面的AFM图谱及其上沉积并五苯薄膜后的AFM和XRD图谱。通过AFM图谱发现PMMA表面较SiO₂表面粗糙度小,其表面粗糙度的均方根值为0.216 nm,而二氧化硅薄膜表面粗糙度的均方根值为1.579 nm;且发现在PMMA上生长的并五苯薄膜的成膜质量优于在SiO₂,具有较大的晶粒尺寸和较少的晶粒间界。通过XRD图谱发现在PMMA上生长的并五苯薄膜具有明显的衍射峰,进一步证明了在PMMA上生长的并五苯薄膜具有更好的结晶状况,将更有利于载流子的传输。     

绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响

通过对OTFT绝缘层SiO_2表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式,制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大,但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后,器件的迁移率比修饰前分别增大了4倍和9倍,而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm~2/(V·s),开关比可达6.0×10~6。     

衬底加热和电极修饰对提高有机场效应晶体管性能的影响

通过衬底加热和氧化钼(MoO3)修饰源漏极制备了并五苯有机场效应晶体管.研究了衬底温度和电极修饰层厚度对器件性能的影响.实验结果表明:当衬底温度为60℃、MoO3修饰层为10 nm时,器件性能获得了显著增强,场效应迁移率由原来的3.39×10-3 cm2/(V·s)提高到2.25 ×10-1 cm2/(V·s),阈值电压由12 V降低到3V.器件性能的改善归因于:衬底加热可以优化有源层形貌,改善载流子传输;而MoO3修饰层显著降低了电极与有源层之间的接触势垒,提高了载流子的注入.因此,衬底加热与电极修饰对于制备高性能有机场效应晶体管是不可或缺的优化手段.     

高迁移率聚合物薄膜晶体管

以高掺杂Si单晶片作为栅电极, 热生长SiO₂作为栅介质层, 聚三己基噻吩薄膜作为半导体活性层, Au作为源、漏电极, 并采用十八烷基三氯硅烷（OTS）对栅介质表面改性, 在空气环境下成功地制备出高性能聚合物薄膜晶体管. 结果表明, 通过采用OTS对栅介质层表面修饰大幅度地改善了聚合物薄膜晶体管的电性能, 器件的场效应迁移率高达0.02 cm²/（Vs）, 开关电流比大于10⁵. 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 表面修饰     

低工作电压聚噻吩薄膜晶体管

以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(<-1 V)下仍呈现出良好的饱和行为,其阈值电压和有效场效应迁移率分别为0.4 V和2.2×10^-2 cm²/V ·s.通过对金属-聚合物-氧化物 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 k栅介质')" href="#">高k栅介质     

有机薄膜晶体管驱动聚合物发光二极管研究

研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta2O5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7V,迁移率为0.91cm2/(V.s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26cd/m2,电流效率分别为12.4和1.1cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.     

有机激光材料及器件的研究现状与展望

有机激光器因其制备简单, 价格低廉和易于集成等优势, 一直以来备受科研工作者的关注. 与无机激光介质相比, 有机激光材料来源广泛, 并具有发射光谱宽, 吸收与发射截面积大等特性, 因而有很大的发展潜力. 本文从激光的基本原理出发, 对有机激光材料的种类、特性进行了归纳, 并总结了高效有机激光材料的普遍特征; 分类讨论了常见有机激光微腔的类型与特点, 对有机激光系统内增益与损耗之间的动态关系进行了探讨. 鉴于实现电抽运激光一直以来都是有机激光领域期待解决的难题, 本文重点讨论了当前电抽运有机激光的研究现状和发展瓶颈, 以及科研工作者们对此问题的不懈探索和已有的工作基础. 最后总结了光抽运有机激光近年来的总体进展, 未来的研究方向, 这对于读者拓展新的研究思路有很好的参考和借鉴意义.     

Length dependence of rectification in organic co-oligomer spin rectifiers

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the chargecurrent rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length.     

Random lasing in an organic light‐emitting crystal and its interplay with vertical cavity feedback

The simultaneous vertical‐cavity and random lasing emission properties of a blue‐emitting molecular crystal are investigated. The 1,1,4,4‐tetraphenyl‐1,3‐butadiene samples, grown by physical vapour transport, feature room‐temperature stimulated emission peaked at about 430 nm. Fabry‐Pérot and random resonances are primed by the interfaces of the crystal with external media and by defect scatterers, respectively. The analysis of the resulting lasing spectra evidences the existence of narrow peaks due to both the built‐in vertical Fabry‐Pérot cavity and random lasing in a novel, surface‐emitting configuration and threshold around 500 μJ cm⁻². The anti‐correlation between different modes is also highlighted, due to competition for gain. Molecular crystals with optical gain candidate as promising photonic media inherently supporting multiple lasing mechanisms.     

发光区插入超薄LiF层对有机电致发光器件性能的影响

着重对比了在以DCM掺杂Alq₃为发光层的红光器件的发光区插入超薄LiF层后器件性能的改善。插入超薄LiF层后,器件的最大工作电流密度为487 mA/cm²,相应的最大电致发光亮度为76 740 cd/m²,最大外量子效率为5.9%。器件内量子效率为40%,超过了基于有机荧光小分子发光材料的有机电致发光器件的内量子效率的理论极限值25%。对器件内单线态及三线态激子的形成过程进行了分析,并推测:超薄LiF层的插入提高了器件内单线态电荷转移态/三线态电荷转移态的形成比例,进而提高了器件内单线态激子在激子总数中的比例,最终提高了器件的内量子效率。同时,超薄LiF层的插入改变了发光层内局域的内部电场,使器件的外量子效率不仅没有随电流密度的增加而降低,反而非线性增加。     

The basis of organic spintronics：Fabrication of organic spin valves

Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve (OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La_0.67Sr_0.33MnO₃ (LSMO)/Alq₃/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.     

Organic quantum well and superlattice characteristics in quasi-one-dimensional multiblock copolymers

A tight-binding calculation was presented to describe multiblock copolymers, such as [...-(PA)x-(PPP)y-...] composed of PA (polyacetylene) and PPP (poly(p-phenylene). It is found that a copolymer has a quantum well and superlattice characteristics, and evident is the effect of the composite lengths, the interfacial couplings and the electron-phonon interactions on the electronic properties of a copolymer. The quantum tunneling, the Franz-Keldysh effect and the quantum confinement can be generated under an applied electric field. These results were compared to those of traditional inorganic quantum well and superlattice systems.     

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices (WOLED) and an organic photovoltaic(OPV) cell. The device is called a PVOLED. It has a glass/ITO/CuPc/m-MTDATA∶V2O5/NPB/CBP∶FIrpic∶DCJTB/BPhen/LiF/Al/P3HT∶PCBM/V2O5/Al structure. The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd/m2, when the conversion efficiency of OPV is 2.3%. We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED. High efficiency (18.3 cd/A) and high contrast ratio (9.3) were obtained at the device operated at 2 500 cd/m2 under an ambient illumination of 24 000 lx. Reasonable white light emission with Commission Internationale De L'Eclairage (CIE) color coordinates of (0.32,0.44) at 20 mA/cm2 and slight color shift occurred in spite of a high current density of 50 mA/cm2. The proposed PVOLED is highly promising for use in outdoors display applications.     

Possibilities and Perspective of Photovoltaic Conversion in Organic Materials

The aim of the paper is to give the present state of the art in solar cells based on organic solid-state films. After short outline of the history of the field, the main trends in development of plastic solar cells are presented. The main obstacles, facing the field of photovoltaic conversion in solid films systems with organic semiconductors to be solved in future, are slow transport of charge-carriers, difficulties in contacts forming and stability towards ambient and UV radiation.     

Organic single crystal phototransistors: Recent approaches and achievements

Organic phototransistors (OPTs), compared to traditional inorganic counterparts, have attracted a great deal of interest because of their inherent flexibility, light-weight, easy and low-cost fabrication, and are considered as potential candidates for next-generation wearable electronics. Currently, significant advances have been made in OPTs with the development of new organic semiconductors and optimization of device fabrication protocols. Among various types of OPTs, small molecule organic single crystal phototransistors (OSCPTs) standout because of their exciting features, such as long exciton diffusion length and high charge carrier mobility relative to organic thinfilm phototransistors. In this review, a brief introduction to device architectures, working mechanisms and figure of merits for OPTs is presented. We then overview recent approaches employed and achievements made for the development of OSCPTs. Finally, we spotlight potential future directions to tackle the existing challenges in this field and accelerate the advancement of OSCPTs towards practical applications.     

Library generation through successive substitution of trichlorotriazine

Summary The decreasing reactivity of tri-, di- and monochlorotriazine was utilized for the solid-phase construction of a combinatorial library with three randomized positions, using 20 amino acids and 50 amines as building blocks. The first chlorine atom was selectively substituted by coupling a large excess of trichlorotriazine to the support-bound amino acid, thus avoiding simultaneous substitution of the second chlorine. The second and third diversity positions were selectively introduced by coupling amines at different temperatures. Mixtures of model compounds were synthesized and analyzed, showing the correct representation of all expected components. A library composed of 12 000 compounds was generated using this method.