Electronic confinement in quasi—one—dimensional triblock copolymers

A tight-binding calculation to describe the triblock copolymer xPA(polyacetylene)/nPPP (poly(p-phenylene))/yPA or xPPP/nPA/yPPP is presented. The interfacial coupling between homopolymer segments is attributed to the hopping of π-electrons and the coupling of σ-bonds. The dependence of the band gap of triblock copolymers on the interfacial couplings or on the composite segment lengths is studied. The influence of composite segment lengths on the electron density is also studied. For nPPP/xPA/nPPP structures, the band gap varies with PA segment length over a wide range of 1.32－2.74eV. For nPA/xPPP/nPA structures,the band gap is invariant with PPP segment length. It is found that a spontaneous tunnelling phenomenon could take place in nPA/xPPP/nPA structures. Furthermore, the polaron caused by doping an electron into nPA/xPPP/nPA will tend to be confined in one of the well (PA) parts. This kind of confinement may increase the electron－hole recombination probability.     

一维共聚物链的色散关系研究

研究了一维共聚物链的晶格振动，得到了不同均聚物构型的色散关系，并分析了其振动模的结构特点.调整界面耦合，得到了界面模，其频率位于声频与光频或光频之间的带隙中.从晶格振动的角度分析了共聚物的量子阱或超晶格特征. 关键词： 共聚物 界面耦合 晶格振动     

正切平方势单量子阱的本征值和本征函数

鉴于“方形”势阱描述量子阱中的电子运动行为过于简单、过于理想,引入了正切平方势来代替,使结果得到了改善。在量子力学框架内,利用正切平方势把电子的Schrdinger方程化为超几何方程,利用系统参数和超几何函数严格地求解了电子的本征值和本征函数,并以Ga_1-xAl_xAs-GaAs-Ga_1-xAl_xAs量子阱为例计算了电子的能级和能级之间的跃迁。结果表明,电子在量子阱中的能量是量子化的,而相邻能级之间的跃迁给出与实验进一步符合的结果。     

Spin-orbit interactions in semiconductor superlattice

The purpose of this paper is to theoretically investigate the spin-orbit interactions of common semiconductor superlattices. Spin splitting and spin-orbit interaction coefficients are calculated based on interactions between the interface-related-Rashba effect and Dresselhaus effect. Semiconductor superlattice shows a series of specific characteristics in spin splitting as follows. The spin splitting of the superlattice structure is greater than that of a single quantum well, contributing to significant spin polarization, spin filtering, and convenient manipulation of spintronic devices. The spin splitting of some superlattice structures does not change with variation of the size of some constituent quantum wells, reducing the requirements for accuracy in the size of quantum wells. The total spin splitting of lower sub-levels of some superlattice can be designed to be zero, realizing a persistent spin helix effect and long spin relaxation time, however, the total spin splitting of higher sub-levels is still appreciable, contributing to desirable spin polarization. These results demonstrate that one superlattice structure can realize two functions, acting as a spin field effect transistor and a spin filter.     

三嵌段共聚物的电子结构及态密度特征

采用紧束缚近似计算方法,针对小带隙的聚乙炔(polyacetylene,(PA))和大带隙的聚对苯撑(poly(p-phenylene),(PPP)组成的三嵌段共聚物(triblock copolymer)-(PA)x-(PPP)n-(PA)y-和-(PPP)x-(PA)n-(PPP)y-性质进行了研究,发现它们具有典型的量子阱特征.对均聚物PPP和PA以及三嵌段共聚物的态密度(density of states, (DOS))进行了计算分析,发现共聚物的态密度与均聚物的态密度有着显著的区别,共聚物的带隙的大小介于大带隙的PPP和小带隙的PA之间,在共聚物中与PPP的导带和价带的子带隙以及共聚物的导带底和价带顶中,所存在的能态密度只能由PA来提供,而在共聚物的价带底和导带顶的能态密度则取决于PPP的态密度.     

A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network

Quantum well devices feature heterostructures of very thin epitaxial layers of group III-V and II-VI semiconductor materials. Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits. The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 0.9 μm and InGaAsP are used for longer wavelengths. Together with quantum well, superlattice structure is another popular design for InGaAs Avalanche Photo Diode (APD). Quantum well structures find their applications in improved lasers, superlattice for photodiodes, modulators and switches. Consequences of quantum well theory are available today in terms of quantum wires and quantum dots. Upon the application of the normal electric field to quantum well structures, exciton pairs becomes more and more confined and the sharp exciton absorption peaks are observed. The effect is termed as “Quantum Confined Stark Effect”. The electro-absorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors. Another electro-absorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector. These effects lead to electro-absorption lasers (EAL) as well as electro-absorption laser modulators (EML).     

The effect of exchange interaction on the energy spectrum of electrons in doped intentionally disordered superlattices

The electron density distribution is calculated for a doped superlattice with controlled vertical disorder caused by fluctuations of the layer thicknesses (quantum well widths) in the growth direction. At low temperatures, the exchange interaction leads to an increase in the scatter of quantum confinement levels and the formation of a soft gap in the electron density distribution over quantum wells of the superlattice.     

Resonant impurity bands in semiconductor superlattices

It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.     

Broadening processes in GaAsδ-doped quantum wire superlattices

We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a δ -doped 2D quantum well superlattice and a 1D quantum wire superlattice generated from the first one by controlled dislocation slips. We deduce first the origin of the broadening from the damping factor in the Shubnikov de Haas curves in various configurations of the magnetic field and the measured current for both kinds of superlattice. Then, we write a general formula for the resistivity in the Quantum Hall effect introducing a dephasing factor we link to the process of localization.     

The effect of post‐growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post‐growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by post‐ growth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well‐defined geometry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

InGaN/GaN超晶格厚度对Si衬底GaN基蓝光发光二极管光电性能的影响

采用有机金属化学气相沉积技术在Si(111)衬底上生长蓝光多量子阱发光二极管(LED) 结构, 通过在量子阱下方分别插入两组不同厚度的InGaN/GaN超晶格, 比较了超晶格厚度对LED光电性能的影响. 结果显示: 随超晶格厚度增加, 样品的反向漏电流加剧; 300 K下电致发光仪测得随着电流增加, LED发光光谱峰值的蓝移量随超晶格厚度增加而减少, 但不同超晶格厚度的两个样品在300 K下的电致发光强度几乎无差异. 结合高分辨X射线衍射仪、扫描电子显微镜、透射电子显微镜对样品的位错密度和V形坑特征分析, 明确了两样品反向漏电流产生巨大差异的原因是由于超晶格厚度大的样品具有更大的V形坑和V形坑密度, 而V形坑可作为载流子的优先通道, 使超晶格更厚的样品反向漏电流加剧. 通过对样品非对称(105)面附近的X射线衍射倒易空间图分析, 算得超晶格厚度大的样品其InGaN量子阱在GaN上的弛豫度也大, 即超晶格厚度增加有利于减小InGaN量子阱所受的应力. 综合以上影响LED发光效率的消长因素, 导致两样品最终的发光强度相近.     

PA和PPP三嵌段共聚物的带电态研究

采用半经验的Austin Model 1(AM1)方法,计算了-(PA)₄-(PPP)_m-(PA)₄-共聚物的带电状态,该系列共聚物具有典型的阱垒阱结构特征.与中性态相比,带电态下其分子结构表现为C—C键长发生显著的改变.在不同的掺杂浓度及不同的势垒宽度下,电荷在势阱中的分布是不同的. 关键词： 共聚物 有机量子阱 带电态 键长     

Magnetooptical force in the resonance field formed by elliptically polarized light waves

The screening of the Coulomb interaction is studied with regard to Friedel oscillations in multicomponent electron plasma structure. A double quantum well (QW) and a superlattice are considered. The groundstate energy of a donor (exciton) in a double quantum well is calculated by a variational method as a function of the population of subbands.     

Schrdinger方程的一般解与超晶格多量子阱的电子跃迁

假设超晶格量子阱是一个形状任意的周期势阱,电子在超晶格中的运动问题可视为周期场中的运动问题.在量子力学的框架内,从Schr dinger方程和它的一般解出发,利用Bloch理论和传输矩阵方法导出了系统的色散方程;在抛物线近似下,讨论了超晶格量子阱的电子跃迁.结果表明,辐射能量位于红外、远红外或太赫兹波段.     

引入n型InGaN/GaN超晶格层提高量子阱特性研究

利用金属有机物化学气相淀积技术在蓝宝石衬底上生长了InGaN/GaN量子阱结构. 研究了引入n型InGaN薄层或InGaN/GaN超晶格层的量子阱特性,结果表明通过引入n型InGaN薄层或InGaN/GaN超晶格层缓解了量子阱有源区中的应力,改善了多量子阱表面形貌,减少了V型缺陷密度,而且提高了多量子阱的光致发光强度,从而也改进了LED的发光效率. 关键词： InGaN/GaN多量子阱 原子力显微镜 X射线双晶衍射 光致发光     

超晶格量子阱作为光学双稳态器件的相平面特征及其稳定性

辐射强度与量子阱沟道的接受度有关,而接受度的大小则直接取决于量子阱宽度、深度以及电子束流的品质等因素.电子束可以用离子注入机或加速器提供,也可以用电压偏置的方法来获得.利用加速器理论中的相平面分析方法,分析了这种双稳态系统的相平面特征及其稳定性.引入正弦平方势,在经典力学框架内和电压偏置情况下,把粒子运动方程化为具有固定力矩的摆方程,用Jacobian椭圆函数和第一类椭圆积分解析地给出了无扰动系统的解和振动周期,并用数值方法分析了扰动情况下的相平面特征和系统的稳定性.为超晶格量子阱光学双稳态器件的设计提供了基本的理论分析.     

Intersubband plasmons of a semiconductor superlattice

Collective intersubband plasmon-like excitations are predicted to exist for a semiconductor superlattice. These modes arise because the single quantum well depolarization shifted intersubband excitation couples via the long-range Coulomb interaction with the corresponding excitations of the other quantum wells of the superlattice. The dispersion relation for these intersubband plasmons is obtained.     

超晶格量子阱的沟道辐射及其谱分布

在经典物理框架内和偶极近似下, 导出了超晶格量子阱沟道辐射频率和辐射谱分布。指出了对于自发辐射谱分布, 存在一个普适的线型因子, 而粒子的最大辐射能量与相对论因子γ 有关, 且与γ3/2成正比。以正弦平方势为例进行了具体讨论。结果表明, 由于势阱深度和噪音的影响, 谐波数l只取少数几个值。超晶格量子阱沟道辐射只存在不多的几条谱线, 为进一步应用提供了可能。最后, 还给出了一种可能的实验方案, 讨论了如何利用弯晶把超晶格量子阱的沟道辐射改造为相干辐射。 In the frame of classical physics and the dipole approximation the radiation frequency and the spectral distribution are derived for the channeling radiation of a charged particle in a superlattice quantum well. It indicated that there is a line type factor f(ξ) suited to various cases in the spontaneous radiations spectrum. Results also show that the maximum radiation energy is proportional to γ3/2 , but the relativistic effects have double effects in the spontaneous radiation of a charged particle. The case for the sine squared potential is discussed specifically. The harmonic number can be defined as a few variable values by the effects of the potential well depth and noise. In general there is a few spectral lines in the channeling radiation spectrum for the superlattice quantum well, and possibilities are provided for further application. Finally, a possible experimental scheme is proposed, and it is discussed that how to transform the channeling radiation in the quantum well into the cohenent radiation by the bent crystal.     

Polaron in a superlattice with δ-like potentials

The problem of the polaron spectrum is studied in a superlattice having narrow quantum wells and relatively wide potential barriers. A δ-like superlattice potential is chosen to solve the problem. This model is adequate, if the penetration depth of the electron wave function into the barrier region is much greater than the width of the quantum well. A weak-coupling polaron at low temperature is studied. Only volume phonons are considered. Expressions are obtained for the polaron mass and the shift of the polaron energy under these assumptions. To test the model, numerical calculations were performed for an InAs-GaSb superlattice, whose quantum wells are quite deep (the energy offset of the conduction bands in InAs and GaSb equals 830 meV), narrow (the width of a quantum well corresponds to the width of an InAs monolayer 6 Å), and the barrier width corresponding to the thickness of the GaSb layers equals 150 Å. The assumption that the penetration depth of the wave function is much greater than the barrier width holds well.     

粗糙界面对Bi2Te3/PbTe超晶格热电优值影响的理论分析

以Bi₂Te₃/PbTe超晶格薄膜为例,分析电子在Bi₂Te₃量子阱中的输运过程,综合了薄膜的经典散射效应和理想量子效应,并以此混合效应为基础,在PbTe障碍层厚度一定时,模拟计算了两种混合效应中量子效应占不同比例时,Bi₂Te₃/PbTe超晶格热电优值的变化.在镜面反射占混合效应的0.3时,得到的热电优值与当前报道的量子阱超晶格的实验值接近. 关键词： 超晶格 粗糙界面 热电优值