Ti和蓝宝石的界面反应

在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al₂O₃)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al₂O₃的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al₂O_{3< 关键词：}

INTERFACIAL REACTION OF Ti AND SAPPHIRE

A 500 nm titanium film was deposited on a polished (1102) oriented sapphire (α-A1₂O₃) substrate using electron beam evaporation under ultra high vacuum conditions. Isothermal furnace annealing has been used to cause the solid-state reaction between Ti film and sapphire substrate. Inter-facial reaction of Ti/α-Al₂O₃ was studied in detail from room temperature (RT) to 850 ℃ using XRD (including general and low incident angle X-ray diffractions), AES (Auger electron spec-troscopy, including the depth profile and the shape analysis of Auger spectra across the interface) and SIMS (Secondary ion mass spectrometry) etc. surface analysis techniques. It was found that at RT and after 300℃ 30 min. annealing, Al₂O₃ was reduced by titanium to produce metallic A1 accumulated at the interface. After 600 ℃ 30 min. annealing, Ti₃Al and TiO₂ were formed. After 850 ℃ 30 min annealing , the amount of Ti₃A1 is increased with the temperature, at meantime the new phases of a number of titanium oxides(Ti_xO_y)and Al₂TiO₅(Al₂O₃·TiO₂) were detected. After 850℃ 4 h annealing, it indicates that apart from the phases described above, Ti₂Al and TiAl₃ were formed. We suggest the chemical equations of reaction corresponding to the different temperature zones and discuss the limitation of the prediction from thermodynamic consideration by using bulk material data.