共查询到17条相似文献,搜索用时 171 毫秒
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超分辨技术是一种无需用减小波长或增大数值孔径的方法减小记录点尺寸而能读出超过衍射极限信号从而有效增加存储密度的一种方法.超分辨可以通过调整光学系统或者调整光盘的结构来实现.在超分辨光盘中,超分辨是基于掩膜的光学性质随入射激光强度的非线性变化而实现的.在磁光盘中第一次引入超分辨技术后,超分辨技术的应用有了很大发展,在目前是提高光盘存储密度的有效方法,在各类光盘中都有良好的应用.近场超分辨技术的出现使相变光盘的超高密度记录和读出成为可能.文章综述了超分辨光盘的发展现状和发展方向. 相似文献
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超分辨技术在光盘中的应用研究 总被引:2,自引:0,他引:2
超分辨技术是一种无需用减小波长或增大数值孔径的方法减小记录点尺寸而能读出超过衍射极限信号从而有效增加存储密度的一种方法,超分辨可以通过调整光学系统或者调整光盘的结构来实现,在超分辨光盘中,超分辨是基于掩膜的光学性质随入射激光强度的非线性变化而实现的,在磁光盘中第一次引入超分辨技术后,超分辨技术的应用有了很大发展,在目前是提高光盘存储密度的有效方法,在各类光盘中都有良好的应用,近场超分辨技术的出现使相变光盘的超高密度记录和读出成为可能,文章综述了超分辨光盘的发展现状和发展方向。 相似文献
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超分辨薄膜是一种能够实现突破光学衍射极限的功能薄膜,它在超分辨近场光存储技术中起到至关重要的作用。采用磁控溅射共溅的方式制备了Ag掺杂一定量Si的超分辨复合薄膜,测试了其作为掩膜层的超分辨光盘读出性能,并获得了最佳的薄膜制备条件,即当Ag溅射功率为55 W,Si为95 W,溅射时间为80s,薄膜厚度为39nm时,超分辨光盘的读出信号载噪比(CNR)最高为28dB。用X射线光电子能谱测量了上述薄膜的组成,用扫描电子显微镜观察了薄膜微区形貌,并用椭圆偏振光谱仪测量了薄膜的光学常数和厚度。超分辨复合薄膜的读出机理可以用Ag的散射型机理解释。光盘在持续读出10万次以后读出信号基本没有下降。 相似文献
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运用非傍轴光束传输的矢量矩理论,对任意线偏振高斯光束的非傍轴传输进行了系统的研究,给出了定量计算偏振对束腰、横向远场发散角和光束传输因子贡献的解析通式. 并对高度非傍轴和傍轴两种极端情形,简化了相应的计算式. 在高斯光源线度趋向于零的极限情形下,两个横向的最大发散角均为90°,与偏振态无关. 在高度非傍轴情形下,可以通过所给出的解析通式设计高斯光源的半宽度与激射光波长之比值以及线偏振态来达到所期望的光束传输特性. 对于傍轴情形,不同偏振对束腰和横向远场发散角稍有影响,但这种影响一般可以忽略不计;而光束传输因子却始终保持不变,与偏振态无关. 若介于这两种极端情形之间,则可以根据高斯光源的半宽度之值和所期望的计算精度,确定解析式中级数的项数进而确定任意线偏振高斯光束的非傍轴传输特性.
关键词:
高斯光束
非傍轴传输
偏振
二阶矩 相似文献
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A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD)camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results. 相似文献
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The enlargement of the emitting aperture is usually one of the important methods of increasing vertical- cavity surface-emitting laser (VCSEL) optical output power. However, in a VCSEL with a larger aperture, the inhomogeneity in the injected current often causes inhomogeneous or even no emission. To solve this problem and to increase VCSEL output power, as well as to improve its thermal characteristics, we develop a new type of injected VCSEL with a larger aperture and a reticular electrode, where the conventional circular injection electrode of the P side is turned into a reticular one, and the heat sink is on the N side. The tests of the new VCSEL show an improvement in homogeneity in not only the injected current but also the emission intensity. The optical output power is also considerably increased, and the device optoelectronic performance is improved. 相似文献
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构建了一种基于光纤传输高功率激光的飞片发射系统,并测试了飞片速度.飞片膜层为三明治结构:铝烧蚀层、氧化铝隔离层和铝飞片产生层.飞片膜层采用磁控溅射技术沉积在玻璃衬底上,总厚度为5.5 μm.激光辐照铝膜层产生高温高压等离子体,驱动剩余膜层产生高速飞片,速度达数km/s.同时,实验研究了光纤传能系统的输出激光空间分布特性和传输激光能量容量,它们决定了飞片的平面性和最大速度.光纤端面损伤是限制光纤传输激光能量容量的关键因素,光纤端面通过精密机械抛光和激光预处理可以获得理想的抗激光损伤能力.采用基于光纤阵列探针的时间序列测试技术获得了飞片的平均速度,并评估了飞片的平面性.采用搭建的基于光纤传输高功率激光的飞片发射系统获得了速度达1.7 km/s、直径接近1 mm的高速飞片.
关键词:
激光驱动飞片
激光辐照
光纤阵列探针
激光等离子体 相似文献
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We presented a new method to improve power efficiencies of the optical systems with Cassegrain telescope receivers by using vortex sources with optimized parameters. A typical model of optical systems with Cassegrain telescope receivers was established and power losses in the optical system under the H-V 5/7 turbulence model were analyzed in detail. The calculating results showed that power efficiency of the optical system can be improved from 76.48% to 97.25%. A reduced-scaled experiment was carried out and the experimental results showed that power efficiency of the optical system can be improved from 71.89% to 90.60%. 相似文献
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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave 下载免费PDF全文
In this paper, we present the damage effect and mechanism of high power microwave(HPM) on Al GaAs/GaAs pseudomorphic high-electron-mobility transistor(p HEMT) of low-noise amplifier(LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs p HEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs p HEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage p HEMT. The interiors of the damaged samples are observed by scanning electron microscopy(SEM) and energy dispersive spectrometer(EDS). Experimental results accord well with the simulation of our model. 相似文献