Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave |
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Institution: | 1.Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;2.Space Payload System Innovation Center, China Academy of Space Technology, Xi'an 710100, China |
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Abstract: | In this paper, we present the damage effect and mechanism of high power microwave(HPM) on Al GaAs/GaAs pseudomorphic high-electron-mobility transistor(p HEMT) of low-noise amplifier(LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs p HEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs p HEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage p HEMT. The interiors of the damaged samples are observed by scanning electron microscopy(SEM) and energy dispersive spectrometer(EDS). Experimental results accord well with the simulation of our model. |
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Keywords: | low noise amplifier HEMT high power microwave damage effect |
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