有机及高分子薄膜电致发光

有机薄膜电致发光，因其具有低压直流驱动、高亮度、高效率、多色、能制成大面积等优点，有可能制产板显示，成为当前研究的特点，本文介绍了有机及高分子电致发光发展的历史、器件结构、发光原理和它的未来。     

Wideband Antireflection Film Fabricated by Glancing Angle Deposition

Graded-index ZrO2 films has been fabricated on K9 glass by glancing angle deposition. Because the index mismatch at the interface has been reduced, the film results in wideband high-transmission antireflection. From 400nm to 1200nm, the film reflection is lower than 0.8% and the lowest value is 0.2% at 432nm.     

金属薄膜电阻特性与厚度测量

考察不同沉积时间的金属铝与铜的薄膜的沉积态,电阻变化与厚度,厚度测量采用实验室光学干涉和透过率对比方法.金相显微与铝铜电阻变化的测量表明,不连续薄膜与连续过渡之间,电阻显著变化处不同.铝膜电阻随时间变化过程开始时存在波动状态.     

沉积在α-Al２Ｏ3分形基底上Ag薄膜的特性

报道了采用磁控溅射法在α－Ａｌ_２Ｏ₃分形基底上沉积Ａｇ薄膜表面的形貌、结晶状态以及其Ｖ－Ｉ特性．结果表明：分形的Ａｌ_２Ｏ₃基底导致Ａｇ薄膜具有起伏不平的结构、较差的结晶状态并且存在大量的孔洞，它们同样受基底温度和薄膜厚度的影响．在一定的厚度范围内，Ａｇ薄膜呈现反常的非线性Ｉ（Ｖ）特性，其行为也受薄膜厚度、基底温度和测试环境的强烈影响． 关键词：     

金刚石薄膜电致发光现象的研究进展

阐明了金刚石薄膜电致发光研究的重要意义．综述了金刚石薄膜电致发光现象研究的进展情况，指出目前该方面研究中存在的问题，并提出了进一步提高金刚石薄膜蓝区电致发光强度的可能途径．     

α-C:H薄膜及其在硅太阳电池上作增透膜的研究

采用高频等离子体汽相淀积法在不同材料衬底上淀积出α-C:H薄膜。Raman谱分析表明,该薄膜既具有类金刚石相,又具有金刚石相。测量了该薄膜可见光范围的透射率和折射率。本文提出把该薄膜涂覆在硅太阳电池上作光学增透膜,使其在0.55—1.0μm波长范围内光谱响应明显提高,并使该电池短路电流增加率达38％。 关键词：     

Co-Zr非晶薄膜的磁感生各向异性

利用射频溅射法制得的Co₉₁Zr₉和Co₈₆Zr₁₄两种成分的样品,对其感生各向异性在等温退火时的再取向作了详细研究。发现其热稳定性随含Zr量的增加而提高,求得其激活能分别为1.7eV和2.5eV。并对其感生各向异性随含非磁性金属原子的增加而下降的现象给出一个新解释。 关键词：     

Determination of optical properties of SnO2 films

Summary The optical properties of conductive transparent thin films of undoped SnO₂, prepared by using magnetron supttering, were studied by measuring the transmittance and the reflectance between λ=0.25 μm and λ=3μm. The extracted optical constants are interpreted to give values of a direct band gap of the order of 4 eV and of an indirect band gap of the order of 3 eV. Typical SnO₂ films transmit ≈85% of visible light, have sheet resistanceR _∂ (100÷800) Ω_∂ and resistivities of (2.4·10⁻³÷1.8·10⁻²) Ω cm.

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Riassunto Mediante la misura dei valori di transmittanza e di riflettanza per lunghezze d'onda comprese fra 0.25 μm e 3 μm, sono state studiate le proprietà ottiche di film sottili (trasparenti e conduttivi) di SnO₂ non drogato, preparati mediante sputtering. Dai valori così ottenuti sono stati ricavati valori del gap diretto dell'ordine di 4 eV e di quello indiretto dell'ordine di 3 eV. Un film di SnO₂ presenta tipicamente valori della transmittanza intorno all'85%, per luce visibile,R _∂ intorno ai (100÷800) Ω_∂ e resistività fra 2.4·10⁻³ e 1.8·10⁻² Ω cm.

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Резюме Пзмеряя величины пропускания и отражения в области длин волн между λ=0.25 мкм и λ=3 мкм, исследуются оптические свойства проводящих прозрачных тонких пленок нелегированного SnO₂, приготовленных с помощью напыления. Из полученных оптических постоянных извлекаются значения прямой щели, порядка 4 эВ, и непрямой щели, порядка 3 эВ. Типичные пленки SnO₂ пропускают ∼85% видимого света, имеют сопротивлениеR _∂ (100÷800) Ω_∂ и удельные сопротивления в области (2.4·10⁻³÷1.8·10⁻²) Ом·см.

     

Photoacoustic study of a two-layer system: Implanted silicon

Summary We have studied the behaviour of photoacoustic response of implanted silicon samples in order to measure the thermal conductivity of damaged layers; the results allow us to determine such a parameter simply by the phase difference measurement between implanted and unimplanted regions of the sample.

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Riassunto è stata studiata la risposta fotoacustica di campioni di silicio impiantato allo scopo di misurare la conducibilità termica degli strati danneggiati; i risultati permettono di determinare questa grandezza misurando semplicemente la differenza di fase tra la zona impiantata e quella cristallina del campione.

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Резюме Исследуется поведение фотоакустического отклика на образцах имплантированного кремиия, чтобы измерить теплопроводность поврежденных слоев. Полученные результаты позволяют получить величину теплопроводности с помощью измерения разности фаз между имплантированной и неимплантированной областлми образца.

     

Oxidation-induced changes in the electro-optical properties of thin copper films

Summary The room temperature oxidation of vapour deposited copper films has been investigated as a function of film thickness and time by the sheet resistance and optical transmittance measurements. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Time variation of the sheet resistance shows that the kinetics of oxidation could be described by a model whereby an initial logarithmic oxide growth changes to an inverse logarithmic one as time progresses; the thicker the film, the longer the change-over time. Absorption coefficients of oxidized films show that the resulting oxide is most probably Cu₂O. Evaluation of the oxidized films for possible use as transparent electrode material shows the existence of an optimum thickness value.

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Riassunto Si è studiata l’ossidazione a temperatura ambiente di pellicole di rame depositate per vaporizzazione in funzione dello spessore della pellicola e del tempo mediante la resistenza del foglio e misurazioni di trasmittenza ottica. Si è osservato un aumento sia della resistenza del foglio, sia della trasmittenza con una tendenza alla saturazione. La variazione temporale della resistenza del foglio mostra che la cinetica di ossidazione potrebbe essere descritta da un modello con cui un’iniziale crescita logaritmica dell’ossido cambia in una logaritmica inversa al crescere del tempo; più spessa è la pellicola più lungo è il tempo del cambiamento. I coefficienti di assorbimento delle pellicole ossidate mostrano che l’ossido risultante è molto probabilmente il Cu₂O. La valutazione delle pellicole ossidate per un possibile uso come materiale di elettrodo trasparente mostra l’esistenza di un valore ottimo dello spessore.

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Резюме Исследуется окисление при комнатной температуре пленок меди в зависимости от толщины пленки и времени, используя измерения сопротивления слоя и оптической прозрачности. Наблюдается увеличение сопротивления слоя и прозрачности с тенденцией к насыщению. Временное изменение сопротивления слоя показывает, что кинетика окисления может быть описана с помощью модели, согласно которой начальный логарифмический рост окисла изменяется на обратно логарифмический, когда время увеличивается; для более толстой пленки изменение происходит при больщих временах. Коэффициенты поглощения окисленных пленок показывают, что результирующий окисел представляет Cu₂O. Оценка возможности использования окисленных пленок в качестве прозрачного материала электродов указывает на существование оптимальной толщины пленки.

     

Photon drag detection of 10 μm radiation in Bi thin-films evaporated on amorphous substrates

Summary We have observed IR detection signals with ns response in irradiated Bi thin films, which were evaporated at large angles with the substrate normal direction. At 10 μm radiation, these detectors show a voltage response with reversed sign compared to the visible-light response which is generated by a well-known thermoelectric effect. Other thin-film metallic detectors as Cr films operating with this effect do not show this sign inversion at 10 μm. We attribute the sign-reversed fast signal in bismuth to a transversal photon drag effect related to the interband transition induced by the 10 μm radiation.

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Riassunto Noi abbiamo osservato una generazione di tensione prodotta ai capi di un film anisotropo di bismuto dall'assorbimento di radiazione a 10 μm. Questa risposta è veloce (ns) ed è differente dal normale segnale termovoltaico osservato in Bi e altri metalli (es. Cr) illuminati da luce visibile, sebbene tale segnale sia osservabile anche a 10 μm. Noi abbiamo attribuito questo segnale veloce ad un effetto di photo-drag trasverso dovuto a transizioni interbanda in microcristalli orientati da una evaporazione a forte angolo.

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Резюме Мы наблюдаем сигналы детектирования инфракрасного излучения с наносекундным временем отклика в облученных тонких пленках Bi которые напылены при больщих углах к нормальному направлению подложки. При облучении с длиной волны 10 мкм зти детекторы обнаруживают отклик с обратным знаком по сравнению с откликом для видимого света, котрый генерируется за счет хорошо известного термозлектрического зффекта. Другие тонкопленочные металлические детекторы, например пленки Cr, работающие на том же зффекте, не обнаруживают явления обращения знака при длине волны 10 мкм. Мы приписываем явление обращения знака в висмуте зффекту сопротивления фотонов, связанному с внутризонным переходом, индуцированным излучением с длиной волиы 10 мкм.

     

Some properties of indium-tin oxide films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.     

A.c. Conductivity of reactive-evaporation-depositeda-Si:H films

Summary The electrical-conductivity frequency dependence of reactive-evaporation-depositeda-Si:H films has been measured in the temperature range (100÷450)K. The influence of the substrate temperature, of the hydrogen ions energy and of post-deposition thermal treatments has also been investigated. The results show that, depending on the material quality, three different conduction mechanisms associated with gap states, band or band tail states and to hopping processes near the Fermi level are observed.     

Switching phenomena in CdIn2S4 thin films

Summary Two kinds of switching phenomena in CdIn₂S₄ polycrystalline and amorphous thin films which were prepared by the vacuum evaporation method and the d.c. sputtering method, respectively, were studied. One is the so-called memory switching phenomenon arising from the low resistive filament path. Another is a characteristic switching phenomenon in which the resistivity abruptly changes whenever the ambient temperature reaches a critical value. The switching time is fast and about 100 ns. This switching phenomenon is related to the native defects in the CdIn₂S₄ lattice, because they can be observed in the polycrystalline as well as in the amorphous thin films. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10⁻³ Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.     

Amorphous silicon-carbon films prepared by reactive evaporation

Summary An ion-beam-assisted deposition (IBAD) technique, based on reactive evaporation using hydrogen/ methane gas mixture, has been used for the preparation ofa-Si_1−x C _x : H films. Measurements are reported on the composition, optical gap, infra-red vibrational absorption bands and on the electrical dark-conductivity temperature dependence to verify the reliability of this deposition method. On increasing the compositional parameterx up to 0.35, the IR results show an increasing hydrogenation and the presence of Si-CH₃ units in addition to the ones with the carbon fully coordinated with the silicon, while the optical-gap and the dark-conductivity activation energies reached the values of 2.44 eV and 0.77 eV, respectively. The authors of this paper have agreed to not receive the proofs for correction     

金属银极薄薄膜的光学特性

本文根据可见光区域测量的不同厚度,不同稳定情况下Ag膜透过率光谱响应曲线,结合岛状金属膜有效介质理论,讨论了Ag膜中类自由电子和束缚电子引起的等效洛伦兹振子和带间跃迁随厚度和稳定时间的变化规律。理论计算的透过率曲线与实验符合得很好。比较理论与实验,得到了不同厚度下、不同稳定情况Ag膜的光学常数。