自适应模拟退火遗传算法在薄膜厚度及光学常数反演中的应用

准确的测量薄膜的厚度和光学常数,在薄膜的制备、研究和应用中都是十分重要的。借助Cauchy色散模型,通过薄膜透过率测量曲线,用改进的自适应模拟退火遗传算法对透过率曲线进行全光谱拟合,从而反演得到薄膜的厚度和光学常数。对由电子束蒸发制备的TiO2单层膜和SiO2/TiO2双层膜的厚度和光学常数进行了测量计算。实验结果表明,计算得到的光学参数与实测结果相一致,厚度误差小于2nm,在560nm波长处折射率误差小于0.03。     

基底温度对电子束蒸发制备氧化铝薄膜的影响

为了考察基底温度对氧化铝薄膜折射率以及沉积厚度的影响情况,在不同基底温度环境下,通过离子辅助电子束蒸发方式,在玻璃基底上制备了同一Tooling因子条件下所监测到相同厚度的Al2O3薄膜,利用分光光度计测量光谱透过率,依据光学薄膜相关理论,计算了基底温度在25℃～300℃范围内获得的膜层实际物理厚度为275.611 nm～348.447 nm,以及膜层折射率的变化。通过对实验结果的数值计算和曲线模拟,给出了基底温度对于薄膜的折射率和实际厚度的影响情况。     

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。     

超薄Ag膜的椭偏光谱建模及解谱

用直流溅射法制备了6个不同厚度的超薄Ag膜。结合超薄Ag膜的结构特点,采用了Drude模型联合Lorentz Oscillator模型的解谱方法,得到1～6号样品的厚度分别为4.0,6.2,12.5,26.2,30.0和40.6 nm。从拟合结果的消光系数k图谱中发现,在1号到4号样品中分别于430,450,560和570 nm处出现了表面等离子体共振峰(SPR),随膜厚的增加共振峰宽化且峰位红移。最后,利用SPR理论计算出不同厚度Ag薄膜等离子体共振峰出现的位置,并和实验结果进行了比较。     

诱导透射干涉滤光片的设计及其镀制工艺

介绍可见光区诱导透射滤光片(简称ITF)的设计和镀制方法,给出透射率随膜层变化的部分理论曲线和实验曲线,讨论金属Ag层厚度和间隔层的变化对ITF透射率和截止宽度的影响。应用直透法监控层厚的工艺,第一间隔层最终控制在透射率高于起始点0.5—0.7％左右时较佳。镀Ag时厚度最终控制在其透射率起始下降到最低点附近较为适宜。     

a-Ge/Ag迭层中的临近效应和互扩散

本文研究了不同厚度Ag膜与2000?非晶Ge膜形成的迭层行为。发现随Ag膜厚度的减小,迭层的室温电阻率愈来愈小于相同厚度单层Ag膜的室温电阻率,实验在室温下得出明显的临近效应。当对这些迭层退火时,实验得到十分不同的电阻R_300K与退火温度T_a的关系以及不同T_a下各种R(T_a)-T的关系。由X射线衍射结构分析电子显微镜观察和电子探针扫描成分分析的结果,本文给这些退火过程中的新现象以物理解释。 关键词：     

偏振干涉成像光谱仪中格兰-泰勒棱镜全视场角透过率的分析与计算

论述了自行设计研制的偏振干涉成像光谱仪的工作原理,分析了其核心部件格兰-泰勒棱镜的分光机理;运用光线追迹方法,推导出了格兰-泰勒棱镜全视场角透过率计算公式;通过计算机模拟分析了入射面、入射角和空气隙厚度对该棱镜透过率的影响,并利用方解石Sellmeier色散方程,给出了该棱镜在仪器系统要求的光谱范围内透过率与波长的关系曲线;实验测试结果与理论计算公式相符,验证了理论公式的正确性.     

周期排列的H-空气槽光学特性研究

利用电子束直写系统和反应离子束刻蚀的方法制作了周期性排列H-形空气槽.样品的参量:金膜的厚度为120nm,石英基底的厚度0.8mm(其中有5nm厚的铬层),样品是由30×30个单个H-形周期排列形成的,总体尺寸为40×40μm2.每个H-形之间的周期为1.1μm,H-形的臂长均为500nm,空气槽的宽度为120nm.然后用实验的方法测量了在近红外波段的透过曲线,在近红外波段1.6μm处的透过率约为16.3%,用传输矩阵的方法对H-形空气槽结构进行了理论模拟,实验与理论模拟结果吻合较好.随后研究了当入射光的偏振方向与H-形结构的长轴之间的夹角分别为0°、30°、45°、60°和90°时透过曲线的变化情况.通过实验和理论表明,表面等离子体在这种特殊的结构中仍然存在,并且在光的增强透过起着决定性的作用.     

Ag-SiO2多层薄膜对光子带隙的影响

采用超高真空电子束蒸发制备了一维紫外、可见光波段光子晶体.研究了在石英衬底上不同周期Ag/SiO2体系对光子带隙的影响.带隙位置与理论计算结果符合.发现二氧化硅层的厚度对带隙位置和银层的透过率有较大影响,厚度的增加降低了反射率,从而使光子带隙更加明显,当厚度达到12层时观察到清晰的光子带隙.     

与衬底接触时金属膜折射率的经验规律

用椭偏仪测透明介质膜(例如硅片上生长的二氧化硅膜),实验数据与理论计算曲线符合得很好;但对于有很强吸收的金属膜,其实验数据与理论计算曲线相差很大。例如,用相同的加热电流但用不同的蒸发时间在硅片上蒸发出不同厚度的银膜,用椭偏仪测试膜厚的结果如图所示。按一般手册所     

Morphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state

Epitaxial ultra-thin Ag films grown on Cu(111) have been investigated by angle-resolved photoemission spectroscopy. The thickness dependence of the binding energy for the Shockley surface state at 300 K could be determined accurately in films up to 5 ML thick. Furthermore, we observe drastic changes in the film morphology after annealing to 450 K. Spectral modifications in the shape of the quantum-well states (QWS), characteristic for these ultra-thin silver films, prove that the surface morphology is homogeneous. The photoemission spectra also indicate that the silver film bifurcates to form a film exhibiting two distinct film thicknesses. For all levels of silver coverage, we identify surface regions that are 2 ML thick, while the thickness of the remaining surface depends on the amount of deposited silver. The almost purely Lorentzian line-shape of the spectral features corresponding to the two different surface regions show that both surface areas are atomically flat. PACS 68.55.Jk; 73.20.At; 73.21.Fg; 79.60.Dp     

Change in surface states of Ag(111) thin films upon adsorption of a monolayer of PTCDA organic molecules

The change in the electronic structure of silver thin films of different thicknesses with the Ag( 111) orientation due to the interaction with an adsorbed monolayer of ordered organic molecules of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) has been investigated in terms of density functional theory. It has been shown that one of the two surface states of the pure films transforms into an unocc upied interface state due to the interaction so that all the main features of the initial state are retained. The relation of the resulting state to the unoccupied state experimentally observed in the PTCDA/Ag( 111 ) system by scanning tunneling and two-photon photoemi ssion spectroscopy has been discussed.     

Modification of surface states in ultrathin films via hybridization with the substrate: a study of Ag on Ge

The Shockley surface state of Ag(111) develops unusual band dispersion relations for Ag films of decreasing thicknesses on Ge(111), as observed by angle-resolved photoemission. Its parabolic dispersion in the thick-film limit shifts toward higher binding energies and splits into multiple bands with dispersions that reflect the valence band structure of Ge including the heavy-hole, light-hole, and split-off bands. The results are explained in terms of a hybridization interaction between the Ag surface state and the Ge substrate states.     

Kinetic limitations in electronic growth of Ag films on Fe(100)

Quantum well (QW) resonances are identified in Ag films on an Fe(100) surface and are used in low energy electron microscopy to monitor film morphology during annealing and growth. We find that Ag films thermally decompose to thicknesses that are stabilized by QW states at the Gamma point. Novel growth morphologies are also observed that highlight the competition between kinetic limitations and the QW state energetics that promote electronic growth. These combined observations help to explain the unusual bifurcation mode of thermal decomposition that was reported previously for this system.     

Thermodesorption of ultrathin organic films studied by reflection

Optical reflection measurements are described as a new and simple technique to measure thicknesses and thickness changes of ultrathin organic overlayers on inorganic support. The prime advantages are high sensitivity in thickness measurements (0.1–1 Å), applicability under varying environmental conditions, nondestructiveness, applicability on different supports and high time resolution. These features are assessed theoretically and experimentally studying Langmuir-Blodgett films on SiO₂ and Au supports. These films, in this work prepared with the model compound arachidic acid, provide the salient feature of well-defined thicknesses in integer multiples of 26.7 Å. Application of the technique in thermodesorption experiments reveals distinguished binding states with binding energies (73–110 kJ/mol) depending on the counterion (Mg²⁺ or Cd²⁺) used in preparing the films and ratios of different states depending on thickness. The binding energy for the main component of multilayers (73 and 81 kJ/mol) with thickness larger than 100 Å is comparable to the heat of evaporation of bulk fatty acids.In addition an analytic expression between layer thicknesses and reflection is derived from the Fresnel equation.     

d-band quantum well states

Observations of d-band quantum well states are made for atomically uniform Ag films on Fe(100) using angle-resolved photoemission. For increasing film thicknesses, quantum well peaks within the small 4d bandwidth multiply rapidly and merge into a bulklike spectrum at approximately 25 monolayers. An analysis of the peak positions yields a highly accurate bulk band structure of Ag. A very narrow d-band peak width (13 meV) is observed at the band top.     

用粉末靶在玻璃和PI衬底上制备AZO/Ag/AZO薄膜

室温下在玻璃和聚酰亚胺两种不同衬底上, 采用射频磁控溅射法溅射掺铝氧化锌(AZO)粉末靶和固体Ag靶, 制备了两组AZO/Ag/AZO 3层透明导电薄膜, 研究了AZO层厚度对不同衬底3层膜结构和光电性能的影响.结果表明:不同衬底的两组AZO/Ag/AZO薄膜均为多晶膜.当Ag层厚度不变时, 随着AZO层厚度的增加, 两组薄膜电学性能变化不大, 透射峰向长波方向移动.玻璃和PI衬底上制备的AZO(30 nm)/Ag(14 nm)/AZO(30 nm)薄膜, 在550 nm处的透光率分别为85%和70%, 方块电阻分别为2.6 Ω/□和4.6 Ω/□.     

Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Transparent conductive ITO/Ag/ITO multilayer electrodes deposited by sputtering at room temperature

ITO/Ag/ITO multilayers have been prepared onto conventional soda lime glass substrates by sputtering at room temperature. The optical and electrical characteristics of single layer and multilayer structures have been investigated as a function of the Ag and ITO film thicknesses. Transmittance and sheet resistance values are found mainly dependent on the Ag film thickness; whereas the wavelength range at which the maximum transmittance is achieved can be changed by adjusting the ITO films thickness. ITO/Ag/ITO electrodes with sheet resistance below 6 Ω/sq have been obtained for Ag film thickness above 10 nm and ITO layers thickness in the 30-50 nm range. These multilayers also show high transmittance in the visible spectral region, above 90% by discounting the glass substrate, with a maximum that is located at higher wavelengths for thicker ITO.