Structure and photoluminescence properties of Er3+-doped TiO2-SiO2 powders prepared by sol-gel method

Er 3+-doped TiO 2-SiO 2 powders are prepared by the sol-gel method,and they are characterized by high resolution transmission electron microscopy (HR-TEM),X-ray diffraction (XRD) spectra,and Raman spectra of the samples.It is shown that the TiO 2 nanocrystals are surrounded by an SiO 2 glass matrix.The photoluminescence (PL) spectra are recorded at room temperature.A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm.The intensity of the emission,which is related to the defect states,is strongest at the annealing temperature of 800 C.The PL intensity of Er 3+ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO 2 particles and Er 3+ ions.     

Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition

Large-scale ZnO nanowire arrays are synthesized by electrodeposition with subsequent heat treatment in atmosphere ambient at 450-650℃. Photoluminescence （PL） is investigated at 295K. Abnormal PL properties of an unusual sharp emission at 485 nm and a broad ultraviolet emission which are different from the other works of ZnO PL before are observed. Field emission scanning electronic microscopy and transmission electron microscopy results show that the length of Zn 0 nanowires is nearly 5μm and their diameter is about 70 nm. X-ray diffraction and electron diffraction results reveal that the ZnO nanowires are a polycrystalline structure.     

A New Method for Preparation of Nanocrystalline Molybdenum Nitride

Nanocrystalline molybdenum nitride （γ-Mo2N） with the cubic structure is prepared by the direct-current arc discharge method in N2 gas, using metal Mo or W rod as a cathode. The x-ray diffraction （XRD） and transmission electron microscopy （TEM） are used to characterize the product. It is found that the conversion of Mo to γ-Mo2N and affinity of Mo to N2 are determined by the nitrogen pressure. Moreover, we compare the effect of Mo and W rod as a cathode for preparing γ-Mo2N. The average size of γ-Mo2N particles is about 5 nm. The rapid quenching mechanism can be used to explain the formation of nanocrystalline γ-Mo2N.     

Synthesis and Growth Mechanism： A Novel Fishing Rod-Shaped GaN Nanorods

A novel fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology. This growth method is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaN nanorods with a relatively high purity and at a low cost. X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy are used to characterize the as- synthesized nanorods. The results show that most of the nanorods consist of a main rod and a top curved thread. It is single-crystal GaN with hexagonal wurtzite structure. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 370.8nm. Furthermore, a possible two-stage growth mechanism of the fishing rod-shaped GaN nanorod is also briefly discussed.     

Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime

Ta2O5 films are deposited on fused silica substrates by conventional e-beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy （AFM） and x-ray photoelectron spectroscopy （XPS）. The calculation of electron structures of Ta2O5 and Ta2O5-x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold （LIDT） is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation （I（λ）=aλm）, which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.     

Study of absorption and re-emission processes in a ternary liquid scintillation system

Liquid scintillators are widely used as the neutrino target in neutrino experiments.The absorption and emission of different components of a ternary liquid scintillator （Linear Alkyl Benzene （LAB） as the solvent,2,5-diphenyloxazole （PPO） as the fluor and p-bis-（o-methylstyryl）-benzene （bis-MSB） as wavelength shifter） are studied.It is shown that the absorption of this liquid scintillator is dominant by LAB and PPO at wavelengths less than 349 nm,and the absorption by bis-MSB becomes prevalent at the wavelength larger than 349 nm.The fluorescence quantum yields,which are the key parameters to model the absorption and re-emission processes in large liquid scintillation detectors,are measured.     

Analysis of simultaneous multiple-exposure hologram

The properties of simultaneously recorded multiple hologram are studied. A new model to describe the behaviors of the hologram is proposed. From this model, an analytic formulas of diffraction efficienies are given. It is shown that the efficiencies can not reach at 100％ due to the coupling between diffraction orders through intermodulation gratings. And the comparisions are made for this model with the results by Kogelnik's coupled wave theory for N=1 and those by L. Solymar's model for neglecting the effect of intermodulation gratings respectively. It is shown that these results are in agreement to each other.     

Photoinduced Reorientation Process and Nonlinear Optical Properties of Ag Nanoparticle Doped Azo Polymer Films

Azobenzene polymer films doped with and without Ag nanoparticles are prepared. The photoinduced reorientation process is investigated by using an Nd：YVO4 pump beam at 532 nm and a low semiconductor laser beam at 650 nm. The reorientation rate of azo polymer films is enhanced in the presence of Ag nanoparticles, and the rate of the azo polymer film with Ag concentration of 2.2 μg/ml is larger than that of the azo polymer films with Ag concentrations of 1.1 μg/ml and 4.4 μg/ml. The third-order nonlinear optical properties of the Ag/azo composite film are obtained by the Z-scan technique at a wavelength of 532 nm, and the measured nonlinear refractive index is 9.258×10-9 esu. It is shown that the main mechanisms involved in the large nonlinear optical responses come from the local field enhancement of Ag nanoparticles and the nonlinear effect of the azo polymer matrix.     

High speed sub-micrometric microscopy using optical polymer microlens

We report the high speed scanning submicronic microscopy （SSM） using a low cost polymer microlens integrated at the extremity of an optical fiber. These microlenses are fabricated by a free-radical photopolymerization method. Using a polymer microlens with a radius of curvature of 250 nm, a sub-micrometric gold pattern is imaged experimentally by SSM. Different distances between the tip and the sample are used with a high scanning speed of 200 cm/s. In particular, metallic absorption contrasts are described with an optical spatial resolution of 250 nm at the wavelength of 532 nm. Moreover, finite-difference time-domain （FDTD） simulations concerning the focal lengths of microlenses with different geometries and heights support the experimental data.     

Fabrication of High Quality Three-Dimensional Photonic Crystals

High quality colloidal photonic crystals made from polystyrene spheres with diameter 24Ohm are fabricated by the vertical deposition method. The scanning electron microscopy (SEM) and the transmittance spectrum are used to characterize the properties of the photonic crystal. The SEM images show that there are few lattice defects. The transmittance of the photonic crystal is above 75% in the pass band at 700nm and is lower than 5% at the centre of the band gap, respectively. It is found that proper concentration is a very important factor to fabricate the photonic crystal when the diameter of the spheres is lower than 30Onm.     

Upconversion Luminescence of Er3+ Ions in Transparent Germanate Glass Ceramics Containing CaF2 Nanocrystals

The visible upconversion and near-infrared luminescence of Er3＋ ions in germanate glass ceramics containing GaF2 nanocrystals are investigated. The nanocrystals are characterized by x-ray diffraction （XRD） and transmission electron microscopy, showing their mean sizes less than 20hm. High transmittance of the glass ceramics is displayed by absorption spectra. The upconversion luminescence intensity in the glass ceramics increases significantly with increasing temperature. Both the shifts of the XRD peaks and the Stark-split shown in the luminescence spectra indicate the entrance of the Er3＋ ions into the CaF2 nanocrystals, which is confirmed by a Judd-Ofelt analysis. Possible mechanisms of the upconversion luminescence are analyzed.     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.     

Blue-to-Orange Tunable Luminescence from Europium Doped Yttrium--Silicon--Oxide--Nitride Phosphors

Europium-doped yttrium-silicon-oxide-nitride phosphors are synthesized by carbothermal reduction and nitridation method. The crystal structure of the phosphors changed gradually from oxide Y2Si2O7 to nitride YSi3N5 state with increasing dosage of Si3N4 and carbon powder. The Y2Si2O7：Eu phosphor shows a blue emission at 465 nm with 300 nm excitation and a characteristic red emission of Eu^3＋ at 612 nm with 230 nm excitation. The YSi3N5：EU phosphor shows a broad emission band centred at 595nm with some sharp peaks of Eu^3＋ with 325nm excitation. The absorption of the studied phosphors increases from 450 to 700hm with an increment in nitrogen content. Blue-to-orange tunable luminescence is observed with 390 nm excitation.     

高压截获十次准晶相关晶体相和纳米级超微粒

 对Al₇₀Co₁₅Ni₁₀Tb₅合金进行了静高压（7.0 GPa）熔态（1 700 ℃）淬火（冷却速率10²⁰ C/s）处理，首次观察到一个新十次准晶相关晶体相。该相属底心正交晶体，晶胞参数为a=2.28 nm、b＝1.60 nm、c＝5.46 nm。通过高分辨像分析，给出了它的二维点阵模型。同时在样品中发现了尺寸均匀的纳米级非晶超微粒形成，超微粒为球形，直径30~40 nm。     

Stability Investigation of Colloidal FePt Nanoparticle Systems by Spectrophotometer Analysis

FePt magnetic nanoparticle systems are an excellent candidate for ultrahigh-density magnetic recording. Monodisperse FePt nanoparticles are synthesized by superhydride reduction of FECl2·4H2O and Pt （acac）2 at 263℃ under N2 atmosphere. Transmission electron microscopy （TEM） images show monosize EePt nanoparticles with diameter of 4 nm and a standard deviation of about 10%. The average distance between monodispesre particles is nearly 3 nm, and oleic acid and oleylamine surround the nanoparticles as surfactants. Stability investigation of nanoparticle colloidal solution is done via speetrophotometery analysis. The results for FePt nanoparticles dispersed in hexane indicate that adding surfactants with concentration of 3 × 10^-3 part by volume for centrifugation stage increases the stability of FePt nanoparticles solution with concentration of 16 mg/mL, about 67%.     

Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine

Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H₂Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq₃). The device structure is ITO/NPB (30nm)/Alq₃: H₂Pc(30nm)/BCP(20nm)/Alq₃(20 nm)/Al. In the light-emitting layers, H₂Pc concentrations are varied from 0wt% to 100wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H₂Pc monomers. The emissions around 910nm and 930nm are from H₂Pc aggregates. The dominant mechanism in the doped devices is direct chargetrapping.     

Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.