Influences of SiO2 laser-induced protective layers and damage threshold of annealing on the Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition. The effects of SiO2 protective layers and annealing on the laser-induced damage threshold （LIDT） of the films are investigated. The results show that SiO2 protective layers exert little influence on the electric field intensity （EFI） distribution, microstructure and microdefect density but increase the absorption slightly. Annealing is effective on decreasing the microdefect density and the absorption of the films. Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT. Moreover, the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.     

Surface relief resonant Brewster filters with multiple channels

In this paper, a new type of resonant Brewster filters （RBF） with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.     

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波 关键词： 导模共振 平面波导 傅里叶模式理论 窄带滤波     

Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime

Ta2O5 films are deposited on fused silica substrates by conventional e-beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy （AFM） and x-ray photoelectron spectroscopy （XPS）. The calculation of electron structures of Ta2O5 and Ta2O5-x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold （LIDT） is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation （I（λ）=aλm）, which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.     

Laser-induced damage threshold in n-on-1 regime of Ta_2O_5 films at 532,800,and 1064 nm

Ta_2O5 films were prepared with conventional electron beam evaporation and annealed in O_2 at 673 K for 12h.Laser-induced damage thresholds(LIDTs)of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly,and then were performed at 532,800,and 1064 nm in n-on-1 regime,respectively- The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm.In addition,in n-on-1 regime,the LIDT increased with the increase of wavelength.Furthermore, both the optical property and LIDT of Ta_2O_5 films were influenced by annealing in O_2.     

Temperature dependences of optical properties,chemical composition,structure,and laser damage in Ta2O5 films

Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures,annealing temperatures,and annealing times.The effects of temperature on the optical properties,chemical composition,structure,and laserinduced damage threshold(LIDT) are systematically investigated.The results show that the increase of deposition temperature decreases the film transmittance slightly,yet annealing below 923 K is beneficial for the transmittance.The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K.While an interesting near-crystalline phase is found when annealed at 923 K.The LIDT increases with the deposition temperature increasing,whereas it increases firstly and then decreases as the annealing temperature increases.In addition,the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT,which is mainly due to the improvement of the O/Ta ratio.The highest LIDT film is obtained when annealed at 923 K,owing to the lowest density of defect.     

Surface plasmon resonance transmission filters at 1053nm based on metallic grating with narrow slit

Metallic gratings with narrow slits can lead to special optical properties such as strongly enhancing the transmission and considerably strengthening the polarized effect. A narrow-band filter suitable for application in optical communication is designed by sandwiching a metallic grating between two identical dielectric films. The maximum transmission can reach 96% after optimizing the parameters of films and grating at a central wavelength of 1053 nm. It is the first time, to our knowledge, that such high transmission has been reported since the discovery of the extraordinarily high transmission through periodic holes or slits; moreover, the extremely polarized effect is also found in P mode of this symmetric grating.     

Comparison of laser-induced damage in Ta2O5 and Nb2O5 single-layer films and high reflectors

Ta2O5 and Nb2O5 films are deposited on BK7 glass substrates using an electron beam evaporation method and are annealed at 673 K in the air.In this letter,comparative studies of the optical transmittance,microstructure,chemical composition,optical absorption,and laser-induced damage threshold(LIDT) of the two films are conducted.Findings indicate that the substoichiometric defect is very harmful to the laser damage resistance of Ta2O5 and Nb2O5 films.The decrease of absorption improves the LIDT in films deposited by the same material.However,although the absorption of the Ta2O5 single layer is less than that of the Nb2O5 single layer,the LIDT of the former is lower than that of the latter.High-reflective(HR) coatings have a higher LIDT than single layers due to the thermal dissipation of the SiO2 layers and the decreased electric field intensity(EFI).In addition,the Nb2O5 HR coating achieves the highest LIDT at 25.6 J/cm 2 in both single layers and HR coatings.     

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率，低旁带反射，窄带以及带宽可控等优良特性引起了人们极大的关注，采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能，在弱调制模式下，其共振带宽可以被压缩到零点几纳米，但是由于介质表面和空气层的菲涅耳反射，使得偏离或者远离共振区时的反射率偏高，根据等效介质理论，亚波长光栅在远离共振区可以被看为均匀的薄膜，本文通过对导模共振光栅进行单层、双层以及三层抗反射设计，有效的降低了导模共振光栅的旁带反射率，从而在可见光波段获得了性能优良的共振滤波