Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the `hard gap' energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.     

Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3（001） and polar（111） surfaces

The influence of surface polarity on the structural properties of BiFeO3 （BFO） thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 （STO） （100） and polar （111） surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar （001） or polar （111） surfaces perform very differently. BFO/STO （001）is a fully strained tetragonal phase with orientation relationship （001）[100]BFOII（001）[100]STO, while BFO/STO （111） is a rhombohedral phase. BFO/STO （111） has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO （001） and STO （111） are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively.     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

薄膜物理及其应用讲座第五讲Fe－Si／X（Si，Cu，Pd，Cr）多层膜的磁性研究

系统研究了由非晶态Ｆｅ－Ｓｉ合金与Ｓｉ，Ｃｕ，Ｐｄ和Ｃｒ四种不同类型的材料组合而成的磁性多层膜的二维磁性，界面的死层效应和极化效应，层间耦合作用。在Ｆｅ－Ｓｉ／Ｃｒ多层膜研究中，发现了饱和磁化强度随Ｃｒ层厚度的改变而出现振荡变化的现象，这是由于磁性层甲内场的变化，特别是顺磁分量发生振荡变化引起的。     

退火对高Co含量Ti1-zCoxO2磁性半导体的影响

利用磁控溅射仪制备了高Co含量的Ti1-xCocO2磁性半导体样品,并对样品分别在200℃,300℃和400℃进行退火研究.使用透射电子显微镜(TEM)对退火前后样品的结构进行表征,并用X射线光电子能谱(XPS)对退火前后样品中Co元素的化学状态进行鉴定.结果表明高Co含量的Ti1-xCoxO2磁性半导体处于一种亚稳状态,300℃以上的温度便使其结构与成分发生巨大变化.利用超导量子干涉磁强计(SQUID)测量退火前后样品的磁特性.结果表明样品的磁性有了明显的变化,这源于磁性产生的不同机理.     

Co1-xMnx合金电子结构和磁性的理论研究

Ｃｏ１－ ｘ Ｍｎｘ 合金的磁性强烈地依赖于其结构以及Ｍｎ 的相对含量．从第一性原理出发,用线性缀加平面波（ＬＡＰＷ） 方法,分别计算了ｘ ＝ ０００ ,０２５ ,０５０ ,０７５ ,１００ 的情况下,面心立方（ｆｃｃ） 和体心立方（ｂｃｃ） 结构的Ｃｏ１－ ｘ Ｍｎ ｘ 合金的电子结构和基态磁性．随ｘ 的增大,ｆｃｃ 结构的Ｃｏ１－ ｘＭｎ ｘ 合金的磁性从铁磁性和亚铁磁性变为反铁磁性;ｂｃｃ 结构Ｃｏ１－ ｘ Ｍｎｘ 合金从铁磁性减弱到亚铁磁性．较好地解释了有关Ｃｏ１ － ｘ Ｍｎ ｘ 合金的结构和磁性关联的实验结果     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

Oxide magnetic semiconductors： Materials, properties, and devices

We give a brief introduction to the oxide （ZnO, TiO2, In2O3, SnO2, etc.）-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.     

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.     

LaFe1-xNixO3-δ系陶瓷导电性研究

采用标准的固相反应法制得ＬａＦｅ１－ｘＮｉｘＯ３－δ系陶瓷,用双臂电桥原理、四探针法对材料的电阻率进行测试。结果表明,ＬａＦｅ１－ｘＮｉｘＯ３－δ系陶瓷在０．６〈ｘ〈０．８范围具有金属态导电性,在该系材料中,存在着氧缺位和导电电子,因此具有较高的电子和氧离子混合导电性。制造工艺与氧缺位密切相关,适当提高烧结温度可使室温电阻率降低。温温实验证明,在１２０Ｋ附近材料存在一相变过程。