SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.     

RAMAN SCATTERING OF α-ET3(ReO4)2 CHARGE-TRANSFER SALT

We describe the results of Haman studies on C=C stretch modes in α-ET₃(ReO₄)₂ charge-transfer salt with the incident laser beam polarised perpendicular and parallel to the large flat face of plate-like crystal. We have assigned central C=C stretch mode at 1454 cm^-1 and ring C=C stretch mode at 1470cm^-1. The change in ring C=C stretch vibration was observed at the metal-insulator transition of α-ET₃(ReO₄)₂ on warming due to the distortion of the ET molecules.     

Relation between oxidation microstructure and the maximum energy product loss of a Sm2Co17 magnet oxidized at 500 ℃

The oxidation microstructure and maximum energy product (BH)_max loss of a Sm(Co_0.76, Fe_0.1, Cu_0.1, Zr_0.04)₇ magnet oxidized at 500 ℃ were systematically investigated. Three different oxidation regions were formed in the oxidized magnet: a continuous external oxide scale, an internal reaction layer, and a diffusion zone. Both room-temperature and high-temperature (BH)_max losses exhibited the same parabolic increase with oxidation time. An oxygen diffusion model was proposed to simulate the dependence of (BH)_max loss on oxidation time. It is found that the external oxide scale has little effect on the (BH)_max loss, and both the internal reaction layer and diffusion zone result in the (BH)_max loss. Moreover, the diffusion zone leads to more (BH)_max loss than the internal reaction layer. The values of the oxidation rate constant k for internal reaction layer and oxygen diffusion coefficient D for diffusion zone were obtained, which are about 1.91 × 10^-10 cm²/s and 6.54 × 10^-11 cm²/s, respectively.     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

HIGH-RESOLUTION ANALYSIS OF THE ν2+2ν3 BAND OF HDO

The Fourier transform spectrum of the ν₂+2ν₃ band of the HDO molecule was recorded with a resolution of 0.02 cm^-1. The spectrum was rotational analysed and the spectroscopic parameters of the (0,1,2) state were estimated in terms of Watson's effective rotational Hamiltonian model and also the model in the Padé-Borel approximation form. They reproduce the upper energy levels with an accuracy close to the experimental uncertainty of 0.001 cm^-1.     

BTBPD-PC61BM体系光伏性质的密度泛函理论计算

Designing and fabricating high-performance photovoltaic devices have remained a major challenge in organic solar cell technologies.In this work,the photovoltaic performances of BTBPD-PC₆₁BM system were theoretically investigated by means of density functional theory calculations coupled with the Marcus charge transfer model in order to seek novel photovoltaic systems.Moreover,the hole-transfer properties of BTBPD thin-film were also studied by an amorphous cell with 100 BTBPD molecules.Results revealed that the BTBPDPC₆₁BM system possessed a middle-sized open-circuit voltage of 0.70 V,large short-circuit current density of 16.874 mA/cm²,large fill factor of 0.846,and high power conversion efficiency of 10%.With the Marcus model,the charge-dissociation rate constant was predicted to be as fast as 3.079×10¹³ s^-1 in the BTBPD-PC₆₁BM interface,which was as 3-5 orders of magnitude large as the decay (radiative and non-radiative) rate constant (10⁸-10¹⁰ s^-1),indicating very high charge-dissociation efficiency (～100%) in the BTBPD-PC₆₁BM system.Furthermore,by the molecular dynamics simulation,the hole mobility for BTBPD thin-film was predicted to be as high as 3.970×10^-3 cm²V^-1s^-1,which can be attributed to its tight packing in solid state.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

Fabrication of anode supported thick film ceria electrolytes for IT-SOFCs

Anode supported thick film ceria electrolyte unit cells were fabricated using a colloidal dip coating method for IT-SOFCs. Pre-sintering temperature of the anode substrate and the final sintering temperature were found to be the primary parameters determining the density of the film. With Ni-Ce_0.89Gd_0.11 O_2–δ cermet anode, La_0.6Sr_0.4Co_0.2Fe_0.8O₃ cathode and 15 μm Ce_0.89Gd_0.11 O_2–δ electrolyte, the cells were tested in a fuel cell configuration with air at the cathode and moist H₂ at the anode. At 650 °C, the cell indicated a maximum power density of ∼0.27 W/cm² at a current density of 0.62 A/cm². Cell performance was compared with oxygen at the cathode and the cell indicated a maximum power density of ∼0.50 W/cm² at 1.14 A/cm², 650 °C. Activation energy for the area specific resistance (ASR) of the cell suggests that with air at cathode, the cell performance was limited by gaseous diffusion at cathode and with oxygen at cathode, by oxygen ion transport across the electrolyte.     

LiMn2O4 films grown by pulsed-laser deposition

LiMn₂O₄ films have been deposited onto silicon wafer by pulsed-laser deposition (PLD) technique in order to test their reliability as cathode materials in rechargeable lithium microbatteries. The film formation has been studied as a function of the preparation conditions, i.e., composition of the target, substrate temperature, and oxygen partial pressure in the deposition chamber. Depending on the conditions of deposition, Mn₂O₃ was present as an impurity phase. When deposited onto silicon substrate maintained at 300 °C in an oxygen pressure of 100 mTorr from the target LiMn₂O₄+15 % Li₂O, the PLD films are well-textured with crystallite size of 300 nm. It is found that such a film crystallizes in the spinel structure (Fd3m symmetry) as evidenced by x-ray diffraction and Raman scattering measurements. Surface morphologies of layers were investigated by SEM. The cells Li//LiMn₂O₄ have been tested by cyclic voltammetry and galvanostatic charge-discharge techniques in the range 3.0–4.2 V. The voltage profiles show the two expected steps for Li_xMn₂O₄ with a specific capacity as high as 120 mC/cm² μm. The chemical diffusion coefficients for the Li_xMn₂O₄ thin films appear to be in the range of 10⁻¹¹-10⁻¹² cm²/s. Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999.     

Eu3+离子对Li2O-Na2O-B2O3物理和光学特性的影响

The lithium sodium borate glasses doped with Eu³⁺ ion are prepared using melt quenching technique, their structural and optical properties have been evaluated. The density of prepared glasses exhibits an inverse behavior to the molar volume ranging from 2.26 g/cm³ to 2.43 g/cm³ and 26.95 cm³ /mol to 26.20 cm³ /mol, respectively. The absence of sharp peaks in XRD patterns confirms the amorphous nature of the prepared glasses. The absorption spectra yield four transitions centered at 391 nm (⁷F₀→⁵L₆), 463 nm (⁷F₀→⁵D₂), 531 nm (⁷F₀→⁵D₁), and 582 nm (⁷F₀→⁵D₀). The most intense red luminescence is observed at 612 nm corresponding to ⁵D₀→⁷F₂ transition under 390 nm laser excitations.     

Ar原子偶宇称3p5(2P1/2)nl'[K']J(l'=1,3)自电离态激发谱线形研究

The even-parity autoionizing resonance series 3p⁵np''[3/2]_1,2, 3p⁵np''[1/2]₁, and 3p⁵nf''[5/2]₃ of Ar have been investigated exciting from the two metastable states 3p⁵4s[3/2]₂ and 3p⁵4s''[1/2]₀ in the photon energy range of 32500-35600 cm^-1 with an experimental bandwidth of ~0.1 cm^-1. The excitation spectra of the even-parity autoionizing resonance series show typical asymmetric line shapes. New level energies, quantum defects, line profile index and resonance widths, resonance lifetime and reduced widths of the autoionizing resonances are derived by a Fano-type line-shape analysis. The line profile index q and the resonance widths Γ are shown to be approximately proportional to the effective principal quantum number n^*. The line separation of the 3p⁵np'' autoionizing resonances is discussed.     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

Large third—order optical nonlinearity in Au nanomeytre particle doped BaTiO3 composite films near the resonant frequency

Nanometre-sized gold particles embedded in BaTiO₃ composite thin films (Au/BaTiO₃) were fabricated by the pulsed laser deposition technique. The films were grown on MgO (100) substrates at 700℃. The crystalline property of the films was studied with x-ray diffraction. X-ray photoelectron spectroscopy was used to check the Au composition and chemical nature for the deposited films. The absorption peak due to the surface plasmon resonance of Au particles was observed at the wavelength of about 570 nm, which increased as the metal particle size was increased. The nonlinear optical properties of the Au/BaTiO₃ films were determined using the z-scan method at the wavelength of 532 nm, which was close to the resonant frequency. The real and imaginary parts of the third-order nonlinear susceptibility χ⁽³⁾ at an Au concentration of about 6.7 at.% were determined to be 6.62×10^-7 esu and -6.24×10^-8 esu, respectively. The films showed a very large absorption, masking the nonlinear refraction effect at high metal concentrations.     

A POSSIBLE WAY TO MEASURE LITHIUM ION DIFFUSION COEFFICIENT FOR Li INSERTION THIN FILM WITH UNKNOWN Li COMPOSITION: APPLICATION TO LiαCoO2 and WO3

In this paper, a new experimental method of lithium ion diffusion coefficient measurement for lithium intercalation thin film material is presented. This exper-imental method is feasible and can be applied to thin films with unknown lithium composition such as Li_αCoO₂ etc. To check its validity, we used the impedance spec-troscopy method to make a verification on the WO₃ thin film sample with known lithium composition.     

Precursor derived LiMn2O4 thin films as ionic conductor

Thin films of spinel LiMn₂O₄ have been fabricated using a metallorganic precursor. Crystalline films have been deposited on Au substrates to exhibit as the cathode in rechargeable thin film lithium batteries. The nucleation and growth of spinel LiMn₂O₄ crystallites were investigated with heat treatment of the deposited thin films. Film capacity density as high as 22 μAh/cm² was measured for LiMn₂O₄. The film heat treated at 700 °C were cycled electrochemically up to 30 cycles against Li metal without any degradation of the capacity. There were neither open area nor amorphous layers which prevent the Li⁺ions transfer at the boundaries in the LiMn₂O₄ thin film. The microscopic study revealed that (111) planes in the two grains directly bonded at the grain boundary which could proceed the lithium ion intercalation or deintercalation smoothly.     

OBSERVATION OF PHOTOREFRACTIVE EFFECT OF KNbO3 CRYSTAL AT μW ILLUMINATION

The photorefractive effects of the as-grown and proton-implanted KNbO₃ crystals were studied by two-wave mixing at 62.2μW/cm² illumination. At this pump power level, the as-grown crystal showed little photorefractive effect, while the proton-implanted crystal showed an obvious effect. Furthermore, there seemed to exist two photorefractive gratings with response times of 22.54 and 1596.30s, at 62.2μW/cm² pump power level, in the proton-implanted sample. This phenomenon has been attributed to the influence of proton-implantation.     

Excess noise in YBa2Cu3O7 epitaxial films and antenna-type microbolometers based on them

Monte Carlo modelled anneals of YBa₂Cu₃O₇ epitaxial films have been carried out, and the excess flicker noise in the operating frequency and temperature ranges were shown to be dominated by oxygen migration near small-angle block boundaries. Optimization of film and planar-microstructure fabrication permitted reaching a record-low Hooge noise parameter (1.8×10⁻⁴ at 93 K) for test structures, which can be used to prepare high-performance antenna-type strip microbolometers. Calculations show that the reduction of the microstrip size to 1×0.7 μm² and of the flicker noise made possible detection of radiation within the spectral range from 3 mm to 300 μm (100–1000 GHz) at 90 K, with a nanosecond response and a noise-equivalent power of 1.5×10⁻¹² W/Hz^1/2 at frequencies from 30 to 10⁷ Hz, which is close to the limitations imposed by phonon noise. Fiz. Tverd. Tela (St. Petersburg) 41, 1931–1935 (November 1999)     

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A_Mn⁺ centre with two holes weakly bound by a negatively charged 3d⁵(Mn) core of a local spin S=5/2 in the framework of the effective mass approximation near the Γ critical point (k～0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A_Mn⁺ are calculated within a hole concentration range from 1 × 10¹⁶ cm^-3 to 1 × 10¹⁷ cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A_Mn⁰ centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A_Mn⁺ centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A_Mn⁺ centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A_Mn⁺ centre since a high frequency dielectric constant of varepsilon _∞ =10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A_Mn⁺ centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.     

一氧化二氮分子位于775 nm的6υ3振动泛频跃迁的高精密光腔衰荡光谱

Transitions of the 6υ₃ overtone band of ¹⁴N₂ ¹⁶O near 775 nm have been studied by continuous-wave cavity ring-down spectroscopy. Line positions and intensities were derived from a fit of the line shape using a hard-collisional profile. The line positions determined with absolute accuracy of 5×10^-4 cm^-1 allowed us to reveal finer ro-vibrational couplings taking place after J>14 except a strong anharmonic interaction identified by the effective Hamiltonian model. The absolute line intensities have also been retrieved with an estimated accuracy of 2% for a majority of the unblended lines. A new set of ro-vibrational and dipole moment parameters were derived from the experimental values. A comparison between the line positions and intensities of the 6υ₃ band obtained in this work and those from previous studies is given.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.