IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

NON-EQUILIBRIUM MICROWAVE RESPONSE OF Yba2Cu3O7-δ GRANULAR THIN FILMS UNDER MAGNETIC FIELDS

Microwave responses of YBa₂Cu₃O_7-δ(YBCO) granular film have been studied at the microwave frequency of 30.5 GHz. In the absence of a magnetic field the dependence of a normal microwave response on the bias current is observed at a temperature close to T_c. When a magnetic field ranged from 5.0 mT to 33.0 mT is applied, the responses broaden and shift toward a lower temperature. In the superconducting state, the responses were found to be highly dependent on the magnetic field. For the current equal to 5.0mA and a magnetic field above 17.0mT the response increases and did not vanish even at a very low temperature, the fact is believed to be correlated to the anisotropic character of the structure.     

ANISOTROPY OF CRITICAL CURRENT DENSITY IN c-AXIS ORIENTED EPITAXIAL YBa2Cu3O7-δ FILMS

The dependence of critical current density J_c on the angle α between the directions of the applied magnetic field H (which was rotated in the c-axis-I plane) and the in-plane current I was measured on a c-axis oriented epitaxial YBa₂Cu₃O_7-δ films at 81 K, with the magnetic field strength up to 6T. Analysis of the experimental results on the basis of the classical scaling law of pinning force shows that there exist simultaneously planar-pinning and volume-pinning mechanisms, and the contribution of volume pinning increases wish decreasing while that of the planar pinning decreases, We propose that the decrease of Lorentz-force-independent critical current density with increasing H for H∥I results from the suppression of superconductivity by the magnetic field, The fact that the contribution of volume pinning increases with decreasing α also arises from the suppression of superconductivity in CuO₂ plane by the magnetic field.     

Highly sensitive giant magnetoimpedance in a solenoid containing FeCo-based ribbon

The highly sensitive giant magneto-impedance effect in a solenoid containing a magnetic core of Fe₃₆Co₃₆Nb₄Si_4.8B_19.2 (FeCo-based) ribbon under a weak magnetic field (WMF) is presented in this paper. The FeCo-based amorphous ribbon is prepared by single roller quenching and annealed with Joule heat in a flowing nitrogen atmosphere. The giant magnetoimpedance effect in solenoid (GMIES) profiles are measured with an HP4294A impedance analyzer. The result shows that the GMIES responds to the WMF sensitively (as high as 1580 %/A穖^-1). The high sensitivity can be obtained in a moderate narrow range of annealing current density (30-34 A/mm²) and closely depends on the driven current frequency. The highest sensitivity (1580 %/A穖^-1) is obtained when the FeCo-based amorphous ribbon is annealed at 32 A/mm² for 10 min and then driven with an alterning current (AC) at the frequency of 350 kHz. The highly sensitive GMIES under the WMF may result from the multiple magnetic-anisotropic structure, which is induced by the temperature gradient produced during Joule-heating the ribbon.     

一氧化二氮分子位于775 nm的6υ3振动泛频跃迁的高精密光腔衰荡光谱

Transitions of the 6υ₃ overtone band of ¹⁴N₂ ¹⁶O near 775 nm have been studied by continuous-wave cavity ring-down spectroscopy. Line positions and intensities were derived from a fit of the line shape using a hard-collisional profile. The line positions determined with absolute accuracy of 5×10^-4 cm^-1 allowed us to reveal finer ro-vibrational couplings taking place after J>14 except a strong anharmonic interaction identified by the effective Hamiltonian model. The absolute line intensities have also been retrieved with an estimated accuracy of 2% for a majority of the unblended lines. A new set of ro-vibrational and dipole moment parameters were derived from the experimental values. A comparison between the line positions and intensities of the 6υ₃ band obtained in this work and those from previous studies is given.     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

Synthesis of ZnO films with a special texture and enhanced field emission properties

ZnO films with special textures are fabricated on Mo-coated Al₂O₃ ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density ～0.11 mA/cm² at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.     

Fabrication of anode supported thick film ceria electrolytes for IT-SOFCs

Anode supported thick film ceria electrolyte unit cells were fabricated using a colloidal dip coating method for IT-SOFCs. Pre-sintering temperature of the anode substrate and the final sintering temperature were found to be the primary parameters determining the density of the film. With Ni-Ce_0.89Gd_0.11 O_2–δ cermet anode, La_0.6Sr_0.4Co_0.2Fe_0.8O₃ cathode and 15 μm Ce_0.89Gd_0.11 O_2–δ electrolyte, the cells were tested in a fuel cell configuration with air at the cathode and moist H₂ at the anode. At 650 °C, the cell indicated a maximum power density of ∼0.27 W/cm² at a current density of 0.62 A/cm². Cell performance was compared with oxygen at the cathode and the cell indicated a maximum power density of ∼0.50 W/cm² at 1.14 A/cm², 650 °C. Activation energy for the area specific resistance (ASR) of the cell suggests that with air at cathode, the cell performance was limited by gaseous diffusion at cathode and with oxygen at cathode, by oxygen ion transport across the electrolyte.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

Effect of Disclination Lines on Free Energy of Nematic Liquid Crystals

In the light of φ-mapping method and topological current theory, the effect of disclination lines on the free energy density of nematic liquid crystals is studied. It is pointed out that the total Frank free energy density can be divided into two parts. One is the distorted energy density of director field around the disclination lines. The other is the saddle-splay energy density, which is shown to be centralized at the disclination lines and to be topologically quantized in the unit of kπ /2 when the Jacobian determinant of the director field does not vanish at the singularities of the director field. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director field at the disclination lines, i.e., the disclination strengthes. When the Jacobian determinant vanishes, the generation, annihilation, intersection, splitting and merging processes of the saddle-splay energy density are detailed in the neighborhoods of the limit points and bifurcation points, respectively. It is shown that the disclination line with high topological quantum number is unstable and will evolve to the low topological quantum number states through the splitting process.     

BTBPD-PC61BM体系光伏性质的密度泛函理论计算

Designing and fabricating high-performance photovoltaic devices have remained a major challenge in organic solar cell technologies.In this work,the photovoltaic performances of BTBPD-PC₆₁BM system were theoretically investigated by means of density functional theory calculations coupled with the Marcus charge transfer model in order to seek novel photovoltaic systems.Moreover,the hole-transfer properties of BTBPD thin-film were also studied by an amorphous cell with 100 BTBPD molecules.Results revealed that the BTBPDPC₆₁BM system possessed a middle-sized open-circuit voltage of 0.70 V,large short-circuit current density of 16.874 mA/cm²,large fill factor of 0.846,and high power conversion efficiency of 10%.With the Marcus model,the charge-dissociation rate constant was predicted to be as fast as 3.079×10¹³ s^-1 in the BTBPD-PC₆₁BM interface,which was as 3-5 orders of magnitude large as the decay (radiative and non-radiative) rate constant (10⁸-10¹⁰ s^-1),indicating very high charge-dissociation efficiency (～100%) in the BTBPD-PC₆₁BM system.Furthermore,by the molecular dynamics simulation,the hole mobility for BTBPD thin-film was predicted to be as high as 3.970×10^-3 cm²V^-1s^-1,which can be attributed to its tight packing in solid state.     

Numerical study on characteristics of nitrogen discharge at high pressure with induced plasma

Based on the fluid theory of plasma, a model is built to study the characteristics of nitrogen discharge at high pressure with induced argon plasma. In the model, the spices such as electron, N₂⁺, N₄⁺, Ar⁺, and two metastable states (N₂ (A³∑_u⁺), N₂ (a¹∑_u^-)) are taken into account. The model includes particle's continuity equations, electron's energy balance equation, and Poisson equation. The model is solved with a finite difference method. The numerical results are obtained and used to investigate the effect of time taken to add nitrogen gas and initially-induced argon plasma pressure. It is found that lower speeds of adding the nitrogen gas and varying the gas pressure can induce higher plasma density, and inversely lower electron temperature. At high-pressure discharge, the electron density increases when the proportion of nitrogen component is below 40%, while the electron density will keep constant as the nitrogen component further increases. It is also shown that with the increase of initially-induced argon plasma pressure, the density of charged particles increases, and the electron temperature as well as the electric field decrease.     

Edge termination study and fabrication of a 4Hben SiC junction barrier Schottky diode

The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm². A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm² under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm².     

Effect of Disclination Lines on Free Energy of Nematic Liquid Crystals

In the light of φ-mapping method-and topological current theory, the effect of disclination lines on the free energy density of nematic liquid crystals is studied. It is pointed out that the total Frank free energy density can be divided into two parts. One is the distorted energy density of director field around the disclination lines. The other is the saddle-splay energy density, which is shown to be centralized at the disclination lines and to he topologically quantized in the unit of kπ/2 when the Jacobian determinant of the director field does not vanish at the singularities of the director field. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director field at the disclination lines, i.e., the disclination strengthes. When the Jacobian determinant vanishes, the generation, annihilation, intersection, splitting and merging processes of the saddle-splay energy density are detailed in the neighborhoods of the limit points and bifurcation points, respectively. It is shown that the disclination line with high topological quantum number is unstable and will evolve to the low topological quantum number states through the splitting process.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

EFFECTIVE POTENTIAL OF λφ41+3 AT ZERO AND FINITE TEMPERATURES

The effective potential of λφ⁴₁₊₃ model with both signs of parameter m² is evaluated at T=0 by means of a simple but effective method for regularization and renormalization. Then at T≠0, the effective potential is evaluated in imaginary time Green function approach, using the Plana formula. A critical temperature for restoration of symmetry breaking in the standard model of particle physics is estimated to be T_c≌510 GeV.     

Spatial-temporal measurements of magnetic fields in laser-produced plasmas

The results of an investigation of the electromagnetic wave polarization, probing high-temperature laser plasma, as well as spatial-temporal structure of the magnetic fields, electron density, current density, and electron drift velocity are presented. To create the plasma, plane massive Al targets were irradiated with the second harmonic of a phoenix Nd laser at intensities up to 5·10¹⁴ W/cm². It was shown that the magnetooptical Faraday effect is the main mechanism responsible for the changing polarization of the probing wave. Magnetic fields up to 0.4 MG with electron densities ∼10²⁰ cm⁻³ were measured. Analysis of the magnetic field spatial distribution showed that the current density achieved the value ∼90 MA/cm² on the laser axis. The radial structure of the magnetic field testified to the availability of the reversed current in the laser plasma. The spatial and temporal resolutions in these experiments were equaled to ∼5 μsec and ∼50 psec, respectively. Translated from Preprint No. 35 of the Lebedev Physics Institute, Moscow, 1993.     

Structural and electrical properties of SrTiO3 thin films as insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures

SrTiO₃ (STO) thin films were deposited on p-Si(100) substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency (RF) magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300--400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal--insulator--semiconductor (MIS) structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current (SCLC) under the low applied electric field and the Poole--Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10¹¹\Omega \cdot cm under the voltage lower than 10V (corresponding to the electric field of 1.54\times 10³kV\cdotcm^-1). It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal--ferroelectric--insulator--semiconductor (MFIS) structures.     

Contribution of Disclination Lines to Free Energy of Liquid Crystals in Single-Elastic Constant Approximation

In the light of φ-mapping method and topological current theory, the contribution of disclination lines to free energy density of liquid crystals is studied in the single-elastic constant approximation. It is pointed out that the total free energy density can be divided into two parts. One is the usual distorted energy density of director field around the disclination lines. The other is the free energy density of disclination lines themselves, which is shown to be centralized at the disclination lines and to be topologically quantized in the unit of kπ /2. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director field at the disclination lines, i.e. the disclination strengths. From the Lagrange‘s method of multipliers, the equilibrium equation and the molecular field of liquid crystals are also obtained. The physical meaning of the Lagrangian multiplier is just the distorted energy density.