高能量激发的发光材料

从不同材料在高能量密度激发下在激发、传递和发光等不同阶段中的效率变化,了解各种材料在高密度激发时的能量损失的主要环节,分清基质和发光中心的选择原则。为投影电视荧光粉和细管灯粉寻找具有较高效率的发光材料,在X线影像板的光激励材料的研制和γ线影像板的可行性分析方面也得到了一些结果。     

Eu2+在磷酸镧中的发光及Ce3+→Eu2+的能量传递

采用高温固相反应合成了LaPO₄:Eu²⁺和LaPO₄:Ce³⁺,Eu²⁺样品,报道了Eu²⁺在LaPO₄中的发光性质和Ce³⁺→Eu²⁺的能量传递现象。文中探讨了Ce³⁺→Eu²⁺的能量传递机理,根据Dexter电多极相互作用的理论证明其为偶极子偶极子相互作用的共振能量传递。     

掺杂型BaFBr:Eu2+的热释发光性质的研究

BaFBr:Eu^2 是利用色心存储电子－空穴对并用可见光激励读出存储信息（产生Eu^2 的4f^65d→4f^7的跃迁）的优良的光激励发光材料。通过热释发光技术研究了BaFBr:Eu^2 的热激活行为，对其低温段和高温段的热释发光峰分别进行了归属，通过对BaFBr:Eu^2 以及掺杂Na^ 或Al^3 的BaFBr:Eu^2 的热释发光（TL）谱和光激励发光（PSL）谱的表征，指出在BaFBr:Eu^2 中掺杂Na^ 或Al^3 影响了F（Br^-）色心，使其陷阱深度变涛，并从理论上加以计算，得出的热致激发能量的变化与光致激光能量的变化能很好地吻合。     

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A_Mn⁺ centre with two holes weakly bound by a negatively charged 3d⁵(Mn) core of a local spin S=5/2 in the framework of the effective mass approximation near the Γ critical point (k～0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A_Mn⁺ are calculated within a hole concentration range from 1 × 10¹⁶ cm^-3 to 1 × 10¹⁷ cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A_Mn⁰ centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A_Mn⁺ centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A_Mn⁺ centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A_Mn⁺ centre since a high frequency dielectric constant of varepsilon _∞ =10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A_Mn⁺ centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.