Sb掺杂SrTio3透明导电薄膜的光电子能谱研究

用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电 关键词： 光电子能谱 光学透过率 脉冲激光沉积薄膜     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发. 关键词： Fe/ZnO 界面作用 同步辐射光电子能谱 X射线光电子能谱     

NiTi合金薄膜厚度对相变温度影响的X射线光电子能谱分析

采用X射线衍射和X射线光电子能谱实验手段对不同厚度的NiTi薄膜相变温度的变化进行了分析.结果表明在相同衬底温度和退火条件下,3?μm厚度的薄膜晶化温度高于18?μm厚度的薄膜.衬底温度越高,薄膜越易晶化,退火后薄膜奥氏体相转变温度As越低.薄膜的表面有TiO₂氧化层形成,氧化层阻止了Ni原子渗出;膜与基片的界面存在Ti₂O₃和NiO.由于表面和界面氧化层的存在,不同厚度的薄膜内层的厚度也不同,因而薄膜越薄,Ni原子的含量就越高.Ni原子的含量的不同会影响薄膜的相变温度. 关键词： NiTi合金薄膜 X射线衍射 相变 X射线光电子能谱     

单晶Si表面离子束溅射沉积Co纳米薄膜的研究

采用离子束溅射沉积法，在单晶Si基片上制备了不同厚度(1—100nm)的Co纳米薄膜.利用原子力显微镜、X射线光电子能谱(XPS)仪和X射线衍射仪对不同厚度的Co纳米薄膜进行了分析和研究.结果表明：当薄膜厚度为1—10nm时，沉积颗粒形态随薄膜厚度增加将由二维生长的细长胞状过渡到多个颗粒聚集成的球状.当膜厚大于10nm时，小颗粒球聚集成大颗粒球，颗粒球呈现三维生长状态.表面粗糙度随膜厚的增加呈现先增加后减小的趋势，在膜厚为3nm时出现极值.XPS全程宽扫描和窄扫描显示：薄膜表面的元素成分为Co，化学态分别 关键词： 离子束沉积 纳米薄膜 X射线光电子能谱 X射线衍射     

纳米晶Ti薄膜的结构研究

用高密度、高电离度的电子迴旋共振等离子体溅射方法在室温基片上沉积出纳米晶Ti薄膜,基体为玻璃、NaCl单晶、纯Al等。对Ti薄膜的结构、形貌和成分进行X射线衍射(XRD),透射电子显微镜(TEM)和X射线光电子能谱(XPS)分析,表明所沉积的Ti薄膜是平均粒径d<10nm,晶粒大小均匀且具有比较稳定的fcc反常结构的纳米晶粒膜。我们还较系统地研究了各工作参数对Ti薄膜的晶体结构、晶粒尺寸、成膜速率以及对基体粘附力的影响,分析了成膜机理。 关键词：     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法，在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构，当薄膜厚度约为30 nm时，薄膜为单一择优取向；当薄膜厚度约为100nm时，薄膜呈多晶结构.原子力显微镜(AFM)分析表明，当膜厚为30nm时，薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄     

微波输入功率引起a-C∶F薄膜交联结构的增强

使用C2H2和CHF3的混合气体,在改变微波功率的条件下,利用微波电子回旋共振等离子体增强化学气相沉积方法制备了氟化非晶碳薄膜(aC∶F).薄膜的傅里叶变换红外光谱分析结果表明:薄膜中的CC与C—F键含量的比值随功率的增加而相应地增大;借助于紫外可见光谱分析发现,薄膜的光学带隙随功率的增大而减小.由此推断微波输入功率的提高有助于增强薄膜的交联结构.aC∶F薄膜的交流电导与x射线光电子能谱进一步证实了这种增强效应 关键词： 氟化非晶碳薄膜 傅里叶变换红外光谱 x射线光电子能谱     

脉冲偏压电弧离子镀C-N-V薄膜的成分、结构与性能

用脉冲偏压电弧离子镀方法在硬质合金基体上制备了一系列不同成分的C-N-V薄膜.用X射线光电子能谱、激光Raman光谱、 X射线衍射(XRD)、透射电子显微镜(TEM)和纳米压痕等方法分别研究了薄膜的成分、结构与性能.Raman光谱,XRD和TEM结果表明,所制备的薄膜为在类金刚石(DLC)非晶基体上匹配有VN晶体的碳基复合薄膜.随V和N含量的增加,薄膜硬度与弹性模量先增加后下降,在N含量为204%,V含量为218%时薄膜硬度与弹性模量具有最大值,分别为368和5697 GPa,高于相同条件下制备的 关键词： C-N-V薄膜 类金刚石薄膜 纳米复合薄膜 电弧离子镀     

X射线激光Nd薄膜靶表面氧化特性研究

 利用石英晶体振荡技术测量了不同环境中稀土元素Nd薄膜靶表面氧化速率,用俄歇电子能谱,扫描电镜,X射线衍射,X射线光电子能谱分析了Nd薄膜表面氧化过程,发现保存环境对靶的表面氧化行为有重要影响。空气中水分是引起Nd快速氧化的关键因素。表面氧化层为团聚状的非晶结构,氧化物与金属的体各比较小可能是引起Nd薄膜较易氧化的原因。Nd薄膜靶表面覆盖有一层氢氧化物,其厚度按保存在真空、干燥空气和潮湿空气环境而依次递增。     

不同厚度的MgB_2超薄膜的制备和性质研究

本文报导了利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition,HPCVD)在SiC(0001)衬底上制备干净的MgB2超薄膜.在背景气体压强、载气H2流量等条件一定的情况下,改变B2H6流量及沉积时间,制备不同厚度的MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率ρ(42K)、上临界场Hc2等与膜厚的关系.这系列超薄膜生长沿c轴外延,随膜厚度的变小Tc(0)降低,ρ(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于10nm厚的膜,Tc(0)~32.4K,ρ(42K)~124.92μΩ·cm,其表面连接性良好,平均粗糙度为2.72nm,上临界磁场Hc2(0K)~12T,零场4K时的临界电流密度Jc~107A/cm2,为迄今为止所观测到的10nm厚MgB2超薄膜的最高Jc值,这也证明了10nm厚的MgB2膜在超导纳米器件上具有很强的应用潜力.     

采用椭偏法结合分光光度法研究极薄银的光学常数

极薄银在滤光片、高反射镜等中有广泛的应用,其光学常数严重影响着膜系的特性。在室温条件下,采用电阻热蒸发技术分别在硅和玻璃基底上沉积5.3 nm~26 nm不同厚度的极薄银薄膜,用TalySurfCCI非接触式轮廓仪测量了薄膜的厚度,研究了不同厚度银薄膜的光学常数n和k。镀制厚度5.3 nm、7.9 nm、14.1 nm、26.0 nm的银薄膜,结果显示极薄银的光学常数与块状银光学常数不同,当膜厚小于14.1 nm时,折射率n在380 nm~600 nm随波长增加而增加,在600 nm~1 600 nm随波长增加缓慢减小至趋于稳定值2.6;消光系数k在380 nm~500 nm随着波长增加而增加,在500 nm~1 600 nm随波长增加而缓慢减小至趋于0不变;当膜厚大于14.1 nm时,折射率随波长增加而增加,消光系数随波长近似呈线性增加。整体上,膜厚增加时折射率减小且趋于块状银的折射率,k随厚度增加而增加并最终趋于块状膜。用此拟合的光学常数代入TFc膜系设计软件计算其透射率,发现与分光光度计测得的透射率吻合较好。     

The protective properties of ultra-thin diamond like carbon films for high density magnetic storage devices

With the increase of magnetic storage density, the thickness of the protective diamond like carbon (DLC) film on the surfaces of head and disk is required as thin as possible. In this paper, the structure, mechanical properties and corrosion and oxidation resistance of ultra-thin DLC films are investigated. The ultra-thin DLC films were deposited by using filtered cathodic vacuum arc (FCVA) technique. The exact thickness of the ultra-thin DLC film was determined by high resolution transmission electron microscope (HRTEM). Raman analysis indicates that the ultra-thin DLC film presents ta-C structure with high sp³ fraction. In the wear test, a diamond tip was used to simulate a single-asperity contact with the film surface and the wear marks were produced on the film surface. The wear depths decrease with film thickness increasing. If the film thickness was 1.4 nm or above, the wear depth was much lower than that of Si substrate. This indicates that the ultra-thin DLC film with thickness of 1.4 nm shows excellent wear resistance. Corrosion tests in water and oxidation tests in air were carried out to investigate the diffusion barrier effect of the ultra-thin DLC films. The results show that the DLC film with thickness of 1.4 nm provides adequate coverage on the substrate and has good corrosion and oxidation resistance.     

Hydrophilicity of amorphous TiO2 ultra-thin films

The UV-light-induced hydrophilicity of amorphous titanium dioxide thin films obtained by radio frequency magnetron sputtering deposition was studied in relation with film thickness. The effect of UV light irradiation on the film hydrophilicity was fast, strong and did not depend on substrate or thickness for films thicker than a threshold value of about 12 nm, while for thinner films it was weak and dependent on substrate or thickness. The weak effect of UV light irradiation observed for the ultra-thin films (with thickness less than 12 nm) is explained based on results of measurements of surface topography, UV-light absorption and photocurrent decay in vacuum. Comparing to thicker films, the ultra-thin films have a smoother surface, which diminish their real surface area and density of defects, absorb partially the incident UV light radiation, and exhibit a longer decay time of the photocurrent in vacuum, which proves a spatial charge separation. All these effects may contribute to a low UV light irradiation effect on the ultra-thin film hydrophilicity.     

FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiN_x:H/a-Si:H/a-SiN_x:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.     

采用表面等离子激元波技术测定LB膜的光学参数

利用表面等离子激元波技术来测定极薄膜层的光学参量是相当灵敏的,但拟合计算结果往往会得到两组不确定的解。本文报道一种采用Otto耦合结构、通过测量相对于空气隙厚度变化取最小的反射率来唯一确定介质膜层复介电常数和厚度的方法。文章最后给出3对具有不同分子层数的Langmuir-Blodgett膜的测试结果。     

膜层厚度对金属薄膜光学常数的影响

从麦克斯韦方程出发,可以得到超薄金属膜层光学常数n、k与其厚度有关系的理论依据。采用电阻热蒸发和电子束热蒸发的方法在K9玻璃基底上分别沉积了不同厚度的Cu膜、Cr膜、Ag膜,由椭偏法检测、Drude模型拟合,获得了不同厚度Cu膜、Cr膜、Ag膜光学常数n、k随波长λ的变化规律。超薄金属薄膜与块状金属的光学常数相差较大,随着薄膜厚度的增加,n、k值趋近于块状金属。通过对样品膜层吸收、色散特性的分析,发现连续金属薄膜在可见光波段对长波的吸收较大,而且相比于介质薄膜平均色散率高10mn～102nm量级。     

Study of MgO tunnel barriers with conducting atomic force microscopy

The local topographic and conducting properties of ultra-thin MgO films with polycrystalline Ru and amorphous CoFeB as lower electrodes were investigated. The local conductance and topography of the ultra-thin MgO films (from 0.5 to 1.0 nm) were simultaneously measured with a modified conducting atomic force microscope (CAFM). The imaging force was carefully chosen in order to avoid structural damages in the insulating layers. The promising results include the decrease of the density of hotspots with large conductance with the thickness of MgO and show that an insulating barrier is obtained at 1 nm thickness.     

MgB2 超薄膜的制备和性质研究

利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB₂超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B₂H₆流量及沉积时间,制备得到不同厚度的系列MgB₂超薄膜样品,并研究了超导转变温度T_c、剩余电阻率ρ_(42K)、上临界磁场H_c2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,T_c(0)降低,ρ_(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB₂超薄膜,T_c(0) =32.8 K,ρ_(42K) =118 μΩcm,是迄今为止所观测到的厚度为7.5 nm的MgB₂超薄膜最高的T_c值;对于厚度为10 nm的MgB₂膜,T_c(0)=35.5 K,ρ_(42K)=17.7 μΩcm,上临界磁场μ₀H_c2估算为12 T左右,零磁场、4 K时的临界电流密度J_c=1.0×10⁷ A/cm²,是迄今为止10 nm厚MgB₂超薄膜的最高J_c值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB₂超薄膜在超导纳米器件上具有广阔的应用前景. 关键词： 2超薄膜')" href="#">MgB₂超薄膜 薄膜生长 氢气流量 混合物理化学气相沉积     

Compressed exponential form for disordered domain wall motion in ultra-thin Au/Co/Au ferromagnetic films

Magnetization reversal in ultra-thin Au/Co/Au films deposited on single crystal silicon (1 0 0) was investigated using Kerr microscopy. In the considered ultra-thin Co films, with a thickness between 0.7 and 1 nm, the coercivity and magnetic anisotropy decrease with decrease in cobalt layer thickness and the magnetization reversal dynamics is dominated by disordered domain wall motion. An analysis of the observed magnetization reversal dynamics is proposed, starting from the Fatuzzo-Labrune model. We show that the relaxation curves of these samples are well described by a function obtained by a technical transformation of Fatuzzo-Labrune model in the regime dominated by domain wall motion.