团簇淀积纳米结构薄膜的计算机模拟

对团簇的淀积方式作了简介。着重对团簇的淀积过程进行了计算机模拟,从中得出了淀积的尺寸分布与团簇在衬底上的徙动长度有关,而团簇的聚合长大存在一临界尺寸。并给出低能Ｐｂ团簇在碳膜表面的徙动长度和聚合的临界尺寸。     

团簇演积纳米结构薄膜的计算机模拟

对团簇的沉积方式作了简介。着重对团簇的淀积过程进行了计算机模拟,从中得出了淀积的尺寸分布与团簇在衬底上的徒动长度有关,而团簇的聚合长大存在一临界尺寸。并给出低能Ｐｂ团簇在碳膜表面的徒动长度和聚事的临界尺寸。     

FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiN_x:H/a-Si:H/a-SiN_x:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.